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Features
Typical Applications
Absolute Maximum Ratings TC=25oC unless otherwise noted
IGBT
Symbol | Description | Value | Unit |
VCES | Collector-Emitter Voltage | 650 | V |
VGES | Gate-Emitter Voltage | ±20 | V |
IC | Collector Current @ TC=25oC @ TC=135oC | 240 120 | A |
ICM | Pulsed Collector Current tp limited by Tjmax | 360 | A |
PD | Maximum Power Dissipation @ Tj=175oC | 893 | W |
Diode
Symbol | Description | Value | Unit |
VRRM | Repetitive Peak Reverse Voltage | 650 | V |
IF | Diode Continuous Forward Current @ TC=25oC @ TC=80oC | 177 120 | A |
IFM | Diode Maximum Forward Current tp limited by Tjmax | 360 | A |
Discrete
Symbol | Description | Values | Unit |
Tjop | Operating Junction Temperature | -40 to +175 | oC |
TSTG | Storage Temperature Range | -55 to +150 | oC |
TS | Soldering Temperature,1.6mm from case for 10s | 260 | oC |
IGBT Characteristics TC=25oC unless otherwise noted
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
VCE(sat) |
Collector to Emitter Saturation Voltage | IC=120A,VGE=15V, Tj=25oC |
| 1.40 | 1.85 |
V |
IC=120A,VGE=15V, Tj=150oC |
| 1.70 |
| |||
IC=120A,VGE=15V, Tj=175oC |
| 1.75 |
| |||
VGE(th) | Gate-Emitter Threshold Voltage | IC=1.92mA,VCE=VGE, Tj=25oC | 5.1 | 5.8 | 6.5 | V |
ICES | Collector Cut-Off Current | VCE=VCES,VGE=0V, Tj=25oC |
|
| 250 | uA |
IGES | Gate-Emitter Leakage Current | VGE=VGES,VCE=0V, Tj=25oC |
|
| 200 | nA |
RGint | Internal Gate Resistance |
|
| / |
| Ω |
Cies | Input Capacitance | VCE=25V,f=100kHz, VGE=0V |
| 14.1 |
| nF |
Cres | Reverse Transfer Capacitance |
| 0.42 |
| nF | |
QG | Gate Charge | VGE=-15 …+15V |
| 0.86 |
| uC |
td(on) | Turn-On Delay Time |
VCC=300V,IC=120A, RG=7.5Ω, VGE=±15V, LS=40nH,Tj=25oC |
| 68 |
| ns |
tr | Rise Time |
| 201 |
| ns | |
td(off) | Turn-Off Delay Time |
| 166 |
| ns | |
tf | Fall Time |
| 54 |
| ns | |
Eon | Turn-On Switching Loss |
| 7.19 |
| mJ | |
Eoff | Turn-Off Switching Loss |
| 2.56 |
| mJ | |
td(on) | Turn-On Delay Time |
VCC=300V,IC=120A, RG=7.5Ω, VGE=±15V, LS=40nH,Tj=150oC |
| 70 |
| ns |
tr | Rise Time |
| 207 |
| ns | |
td(off) | Turn-Off Delay Time |
| 186 |
| ns | |
tf | Fall Time |
| 106 |
| ns | |
Eon | Turn-On Switching Loss |
| 7.70 |
| mJ | |
Eoff | Turn-Off Switching Loss |
| 2.89 |
| mJ | |
td(on) | Turn-On Delay Time |
VCC=300V,IC=120A, RG=7.5Ω, VGE=±15V, LS=40nH,Tj=175oC |
| 71 |
| ns |
tr | Rise Time |
| 211 |
| ns | |
td(off) | Turn-Off Delay Time |
| 195 |
| ns | |
tf | Fall Time |
| 139 |
| ns | |
Eon | Turn-On Switching Loss |
| 7.80 |
| mJ | |
Eoff | Turn-Off Switching Loss |
| 2.98 |
| mJ | |
ISC |
SC Data | tP≤6μs,VGE=15V, Tj=150 oC,VCC=300V, VCEM≤650V |
|
600 |
|
A |
Diode Characteristics TC=25oC unless otherwise noted
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
VF | Diode Forward Voltage | IF=120A,VGE=0V,Tj=25oC |
| 1.65 | 2.10 |
V |
IF=120A,VGE=0V,Tj=150oC |
| 1.60 |
| |||
IF=120A,VGE=0V,Tj=175oC |
| 1.60 |
| |||
trr | Diode Reverse Recovery Time |
VR=300V,IF=120A, -di/dt=450A/μs,VGE=-15V LS=40nH,Tj=25oC |
| 184 |
| ns |
Qr | Recovered Charge |
| 1.65 |
| μC | |
IRM | Peak Reverse Recovery Current |
| 17.2 |
| A | |
Erec | Reverse Recovery Energy |
| 0.23 |
| mJ | |
trr | Diode Reverse Recovery Time |
VR=300V,IF=120A, -di/dt=450A/μs,VGE=-15V LS=40nH,Tj=150oC |
| 221 |
| ns |
Qr | Recovered Charge |
| 3.24 |
| μC | |
IRM | Peak Reverse Recovery Current |
| 23.1 |
| A | |
Erec | Reverse Recovery Energy |
| 0.53 |
| mJ | |
trr | Diode Reverse Recovery Time |
VR=300V,IF=120A, -di/dt=450A/μs,VGE=-15V LS=40nH,Tj=175oC |
| 246 |
| ns |
Qr | Recovered Charge |
| 3.98 |
| μC | |
IRM | Peak Reverse Recovery Current |
| 26.8 |
| A | |
Erec | Reverse Recovery Energy |
| 0.64 |
| mJ |
Discrete Characteristics TC=25oC unless otherwise noted
Symbol | Parameter | Min. | Typ. | Max. | Unit |
RthJC | Junction-to-Case (per IGBT) Junction-to-Case (per Diode) |
|
| 0.168 0.369 | K/W |
RthJA | Junction-to-Ambient |
| 40 |
| K/W |
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