Brief introduction
IGBT module, produced by STARPOWER. 1200V 600A.
Features
- NPT IGBT technology
-
10μs short circuit capability
-
Low switching losses
-
Rugged with ultrafast performance
-
VCE(sat) with positive temperature coefficient
-
Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology
Typical Applications
-
Switching mode power supply
- Inductive heating
- Electronic welder
Absolute Maximum Ratings TC=25oC unless otherwise noted
IGBT
Symbol |
Description |
Value |
Unit |
VCES |
Collector-Emitter Voltage |
1200 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
IC |
Collector Current @ TC=25oC
@ TC=70oC
|
830
600
|
A |
ICM |
Pulsed Collector Current tp=1ms |
1200 |
A |
PD |
Maximum Power Dissipation @ Tj=150oC |
4032 |
W |
Diode
Symbol |
Description |
Value |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
1200 |
V |
IF |
Diode Continuous Forward Current |
600 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
1200 |
A |
Module
Symbol |
Description |
Value |
Unit |
Tjmax |
Maximum Junction Temperature |
150 |
oC |
Tjop |
Operating Junction Temperature |
-40 to +125 |
oC |
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
2500 |
V |
IGBT Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat)
|
Collector to Emitter
Saturation Voltage
|
IC=600A,VGE=15V, Tj=25oC |
|
2.90 |
3.35 |
V
|
IC=600A,VGE=15V, Tj=125oC |
|
3.60 |
|
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=6.0mA,VCE=VGE, Tj=25oC |
5.0 |
5.8 |
6.6 |
V |
ICES |
Collector Cut-Off
Current
|
VCE=VCES,VGE=0V,
Tj=25oC
|
|
|
5.0 |
mA |
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25oC |
|
|
400 |
nA |
RGint |
Internal Gate Resistance |
|
|
0.25 |
|
Ω |
Cies |
Input Capacitance |
VCE=25V,f=1MHz,
VGE=0V
|
|
39.0 |
|
nF |
Cres |
Reverse Transfer
Capacitance
|
|
2.55 |
|
nF |
QG |
Gate Charge |
VGE=- 15…+15V |
|
6.30 |
|
μC |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=600A, RG= 1. 1Ω,
VGE=±15V, Tj=25oC
|
|
205 |
|
ns |
tr |
Rise Time |
|
50 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
265 |
|
ns |
tf |
Fall Time |
|
140 |
|
ns |
Eon |
Turn-On Switching
Loss
|
|
50.4 |
|
mJ |
Eoff |
Turn-Off Switching
Loss
|
|
20.0 |
|
mJ |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=600A, RG= 1. 1Ω,
VGE=±15V, Tj= 125oC
|
|
210 |
|
ns |
tr |
Rise Time |
|
55 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
275 |
|
ns |
tf |
Fall Time |
|
175 |
|
ns |
Eon |
Turn-On Switching
Loss
|
|
66.0 |
|
mJ |
Eoff |
Turn-Off Switching
Loss
|
|
28.9 |
|
mJ |
|
ISC
|
SC Data
|
tP≤10μs,VGE=15V,
Tj=125oC,VCC=900V, VCEM≤1200V
|
|
3900
|
|
A
|
Diode Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
VF |
Diode Forward
Voltage
|
IF=600A,VGE=0V,Tj=25oC |
|
2.25 |
2.70 |
V |
IF=600A,VGE=0V,Tj= 125oC |
|
2.35 |
|
Qr |
Recovered Charge |
VCC=600V,IF=600A,
-di/dt= 12kA/μs,VGE=±15V, Tj=25oC
|
|
42.0 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
492 |
|
A |
Erec |
Reverse Recovery Energy |
|
16.6 |
|
mJ |
Qr |
Recovered Charge |
VCC=600V,IF=600A,
-di/dt= 12kA/μs,VGE=±15V, Tj= 125oC
|
|
80.4 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
672 |
|
A |
Erec |
Reverse Recovery Energy |
|
37.9 |
|
mJ |
Module Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
LCE |
Stray Inductance |
|
|
20 |
nH |
RCC’+EE’ |
Module Lead Resistance, Terminal to Chip |
|
0.18 |
|
mΩ |
RthJC |
Junction-to-Case (per IGBT)
Junction-to-Case (per Diode)
|
|
|
0.031
0.070
|
K/W |
|
RthCH
|
Case-to-Heatsink (per IGBT)
Case-to-Heatsink (per Diode)
Case-to-Heatsink (per Module)
|
|
0.051
0.114
0.035
|
|
K/W |
|
M
|
Terminal Connection Torque, Screw M4 Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6 |
1.1
2.5
3.0
|
|
2.0
5.0
5.0
|
N.m
|
G |
Weight of Module |
|
300 |
|
g |
EN
