Brief introduction
IGBT module, produced by STARPOWER. 1200V 900A.
Features
- Low VCE(sat) Trench IGBT technology
- 10μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175oC
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology
Typical Applications
- Inverter for motor drive
- AC and DC servo drive amplifier
- Uninterruptible power supply
Absolute Maximum Ratings TC=25oC unless otherwise noted
IGBT
Symbol |
Description |
Value |
Unit |
VCES |
Collector-Emitter Voltage |
1200 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
IC |
Collector Current @ TC=25oC
@ TC= 100oC
|
1410
900
|
A |
ICM |
Pulsed Collector Current tp=1ms |
1800 |
A |
PD |
Maximum Power Dissipation @ T =175oC |
5000 |
W |
Diode
Symbol |
Description |
Value |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
1200 |
V |
IF |
Diode Continuous Forward Current |
900 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
1800 |
A |
Module
Symbol |
Description |
Value |
Unit |
Tjmax |
Maximum Junction Temperature |
175 |
oC |
Tjop |
Operating Junction Temperature |
-40 to +150 |
oC |
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
4000 |
V |
IGBT Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat)
|
Collector to Emitter
Saturation Voltage
|
IC=900A,VGE=15V, Tj=25oC |
|
1.80 |
2.25 |
V
|
IC=900A,VGE=15V, Tj=125oC |
|
2.10 |
|
IC=900A,VGE=15V, Tj=150oC |
|
2.15 |
|
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=22.5mA,VCE=VGE, Tj=25oC |
5.2 |
6.0 |
6.8 |
V |
ICES |
Collector Cut-Off
Current
|
VCE=VCES,VGE=0V,
Tj=25oC
|
|
|
5.0 |
mA |
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25oC |
|
|
400 |
nA |
RGint |
Internal Gate Resistance |
|
|
0.6 |
|
Ω |
QG |
Gate Charge |
VGE=- 15V…+15V |
|
7.40 |
|
μC |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=900A,
RGon= 1.5Ω,RGoff=0.9Ω, VGE=±15V,Tj=25oC
|
|
257 |
|
ns |
tr |
Rise Time |
|
96 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
628 |
|
ns |
tf |
Fall Time |
|
103 |
|
ns |
Eon |
Turn-On Switching
Loss
|
|
43 |
|
mJ |
Eoff |
Turn-Off Switching
Loss
|
|
82 |
|
mJ |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=900A,
RGon= 1.5Ω,RGoff=0.9Ω,
VGE=±15V,Tj= 125oC
|
|
268 |
|
ns |
tr |
Rise Time |
|
107 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
659 |
|
ns |
tf |
Fall Time |
|
144 |
|
ns |
Eon |
Turn-On Switching
Loss
|
|
59 |
|
mJ |
Eoff |
Turn-Off Switching
Loss
|
|
118 |
|
mJ |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=900A,
RGon= 1.5Ω,RGoff=0.9Ω,
VGE=±15V,Tj= 150oC
|
|
278 |
|
ns |
tr |
Rise Time |
|
118 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
680 |
|
ns |
tf |
Fall Time |
|
155 |
|
ns |
Eon |
Turn-On Switching
Loss
|
|
64 |
|
mJ |
Eoff |
Turn-Off Switching
Loss
|
|
134 |
|
mJ |
|
ISC
|
SC Data
|
tP≤10μs,VGE=15V,
Tj=150oC,VCC=800V,
VCEM≤1200V
|
|
3600
|
|
A
|
Diode Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VF
|
Diode Forward
Voltage
|
IF=900A,VGE=0V,Tj=25oC |
|
1.71 |
2.16 |
V
|
IF=900A,VGE=0V,Tj= 125oC |
|
1.74 |
|
IF=900A,VGE=0V,Tj= 150oC |
|
1.75 |
|
Qr |
Recovered Charge |
VR=600V,IF=900A,
-di/dt=6000A/μs,VGE=- 15V Tj=25oC
|
|
76 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
513 |
|
A |
Erec |
Reverse Recovery Energy |
|
38.0 |
|
mJ |
Qr |
Recovered Charge |
VR=600V,IF=900A,
-di/dt=6000A/μs,VGE=- 15V Tj= 125oC
|
|
143 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
684 |
|
A |
Erec |
Reverse Recovery Energy |
|
71.3 |
|
mJ |
Qr |
Recovered Charge |
VR=600V,IF=900A,
-di/dt=6000A/μs,VGE=- 15V Tj= 150oC
|
|
171 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
713 |
|
A |
Erec |
Reverse Recovery Energy |
|
80.8 |
|
mJ |
Module Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
LCE |
Stray Inductance |
|
|
20 |
nH |
RCC’+EE’ |
Module Lead Resistance, Terminal to Chip |
|
0.18 |
|
mΩ |
RthJC |
Junction-to-Case (per IGBT)
Junction-to-Case (per Diode)
|
|
|
0.030
0.052
|
K/W |
|
RthCH
|
Case-to-Heatsink (per IGBT)
Case-to-Heatsink (per Diode)
Case-to-Heatsink (per Module)
|
|
0.016
0.027
0.010
|
|
K/W |
M |
Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6 |
2.5
3.0
|
|
5.0
5.0
|
N.m |
G |
Weight of Module |
|
300 |
|
g |
EN
