Brief introduction
IGBT module,produced by STARPOWER. 1200V 900A.
Features
- Low VCE(sat) Trench IGBT technology
- VCE(sat) with positive temperature coefficient
- Fast & soft reverse recovery anti-parallel FWD
- Low inductance case
- AlSiC baseplate for high power cycling capability
- AlN substrate for low thermal resistance
Typical Applications
- Inverter for motor drive
- AC and DC servo drive amplifier
- Uninterruptible power supply
Absolute Maximum Ratings TF=25oC unless otherwise noted
IGBT
Symbol |
Description |
Value |
Unit |
VCES |
Collector-Emitter Voltage |
1200 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
IC |
Collector Current @ TC=25oC @ TC=100oC |
1466
900
|
A |
ICM |
Pulsed Collector Current tp=1ms |
1800 |
A |
PD |
Maximum Power Dissipation @ Tvj=175oC |
5.34 |
kW |
Diode
Symbol |
Description |
Value |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
1200 |
V |
IF |
Diode Continuous Forward Current |
900 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
1800 |
A |
Module
Symbol |
Description |
Value |
Unit |
Tvjmax |
Maximum Junction Temperature |
175 |
oC |
Tvjop |
Operating Junction Temperature |
-40 to +150 |
oC |
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
4000 |
V |
IGBT Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat)
|
Collector to Emitter Saturation Voltage
|
IC=900A,VGE=15V, Tvj=25oC |
|
2.00 |
2.45 |
V
|
IC=900A,VGE=15V, Tvj=125oC |
|
2.50 |
|
IC=900A,VGE=15V, Tvj=150oC |
|
2.65 |
|
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=32.0mA,VCE=VGE, Tvj=25oC |
5.2 |
6.0 |
6.8 |
V |
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tvj=25oC |
|
|
1.0 |
mA |
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tvj=25oC |
|
|
400 |
nA |
RGint |
Internal Gate Resistance |
|
|
1.44 |
|
Ω |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=900A, RGon=1Ω, RGoff=2Ω, Ls=50nH,
VGE=-10/+15V, Tvj=25oC
|
|
520 |
|
ns |
tr |
Rise Time |
|
127 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
493 |
|
ns |
tf |
Fall Time |
|
72 |
|
ns |
Eon |
Turn-On Switching Loss |
|
76.0 |
|
mJ |
Eoff |
Turn-Off Switching Loss |
|
85.0 |
|
mJ |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=900A, RGon=1Ω, RGoff=2Ω, Ls=50nH,
VGE=-10/+15V, Tvj=125oC
|
|
580 |
|
ns |
tr |
Rise Time |
|
168 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
644 |
|
ns |
tf |
Fall Time |
|
89 |
|
ns |
Eon |
Turn-On Switching Loss |
|
127 |
|
mJ |
Eoff |
Turn-Off Switching Loss |
|
98.5 |
|
mJ |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=900A, RGon=1Ω, RGoff=2Ω, Ls=50nH,
VGE=-10/+15V, Tvj=150oC
|
|
629 |
|
ns |
tr |
Rise Time |
|
176 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
676 |
|
ns |
tf |
Fall Time |
|
96 |
|
ns |
Eon |
Turn-On Switching Loss |
|
134 |
|
mJ |
Eoff |
Turn-Off Switching Loss |
|
99.0 |
|
mJ |
Diode Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VF
|
Diode Forward Voltage |
IF=900A,VGE=0V,Tvj=25oC |
|
1.95 |
2.40 |
V
|
IF=900A,VGE=0V,Tvj=125oC |
|
2.00 |
|
IF=900A,VGE=0V,Tvj=150oC |
|
2.05 |
|
Qr |
Recovered Charge |
VR=600V,IF=900A,
-di/dt=7100A/μs, Ls=50nH, VGE=-10V,
Tvj=25oC
|
|
80 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
486 |
|
A |
Erec |
Reverse Recovery Energy |
|
35.0 |
|
mJ |
Qr |
Recovered Charge |
VR=600V,IF=900A,
-di/dt=5180A/μs, Ls=50nH, VGE=-10V,
Tvj=125oC
|
|
153 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
510 |
|
A |
Erec |
Reverse Recovery Energy |
|
64.0 |
|
mJ |
Qr |
Recovered Charge |
VR=600V,IF=900A,
-di/dt=4990A/μs, Ls=50nH, VGE=-10V,
Tvj=150oC
|
|
158 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
513 |
|
A |
Erec |
Reverse Recovery Energy |
|
74.0 |
|
mJ |
Module Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
LCE |
Stray Inductance |
|
12 |
|
nH |
RCC’+EE’ |
Module Lead Resistance, Terminal to Chip |
|
0.19 |
|
mΩ |
RthJC |
Junction-to-Case (perIGBT) Junction-to-Case (per Diode) |
|
|
28.1 44.1 |
K/kW |
|
RthCH
|
Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) |
|
9.82 15.4 6.0 |
|
K/kW |
|
M
|
Terminal Connection Torque, Screw M4 Terminal Connection Torque, Screw M8 Mounting Torque, Screw M6 |
1.8 8.0 4.25 |
|
2.1
10
5.75
|
N.m |
G |
Weight of Module |
|
1050 |
|
g |
EN
