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IGBT Module 1200V

IGBT Module 1200V

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GD800HFA120C6SD,IGBT Module,STARPOWER

1200V 800A Package:C6.1

Brand:
STARPOWER
Spu:
GD800HFA120C6SD
  • Introduction
  • Outline
Introduction

Brief introduction

IGBT module, produced by STARPOWER. 1200V 800A.

Features

  • Low VCE(sat) Trench IGBT technology
  • Short circuit capability
  • VCE(sat) with positive temperature coefficient
  • Maximum junction temperature 175oC
  • Low inductance case
  • Fast & soft reverse recovery anti-parallel FWD
  • Isolated copper baseplate using DBC technology

Typical Applications

  • Hybrid and electric vehicle
  • Inverter for motor drive
  • Uninterruptible power supply

Absolute Maximum Ratings TC=25oC unless otherwise noted

IGBT

Symbol

Description

Values

Unit

VCES

Collector-Emitter Voltage

1200

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current @ TC=100oC

800

A

ICM

Pulsed Collector Current tp=1ms

1600

A

PD

Maximum Power Dissipation @ Tvj=175oC

4687

W

Diode

Symbol

Description

Values

Unit

VRRM

Repetitive Peak Reverse Voltage

1200

V

IF

Diode Continuous Forward Current

900

A

IFM

Diode Maximum Forward Current tp=1ms

1800

A

IFSM

Surge Forward Current tp=10ms @ Tvj=125oC @ Tvj=175oC

2392

2448

A

I2t

I2t-value,tp=10ms @ Tvj=125oC @ Tvj=175oC

28608

29964

A2s

Module

Symbol

Description

Value

Unit

Tvjmax

Maximum Junction Temperature

175

oC

Tvjop

Operating Junction Temperature

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage RMS,f=50Hz,t=1min

2500

V

IGBT Characteristics TC=25oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter Saturation Voltage

IC=800A,VGE=15V, Tvj=25oC

1.40

1.85

V

IC=800A,VGE=15V, Tvj=125oC

1.60

IC=800A,VGE=15V, Tvj=175oC

1.60

VGE(th)

Gate-Emitter Threshold Voltage

IC=24.0mA,VCE=VGE, Tvj=25oC

5.5

6.3

7.0

V

ICES

Collector Cut-Off Current

VCE=VCES,VGE=0V, Tvj=25oC

1.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tvj=25oC

400

nA

RGint

Internal Gate Resistance

0.5

Ω

Cies

Input Capacitance

VCE=25V,f=100kHz, VGE=0V

28.4

nF

Cres

Reverse Transfer Capacitance

0.15

nF

QG

Gate Charge

VGE=-15…+15V

2.05

μC

td(on)

Turn-On Delay Time

VCC=600V,IC=800A, RG=0.5Ω, LS=40nH, VGE=-8V/+15V,

Tvj=25oC

168

ns

tr

Rise Time

78

ns

td(off)

Turn-Off Delay Time

428

ns

tf

Fall Time

123

ns

Eon

Turn-On Switching Loss

43.4

mJ

Eoff

Turn-Off Switching Loss

77.0

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=800A,

RG=0.5Ω, LS=40nH,

VGE=-8V/+15V,

Tvj=125oC

172

ns

tr

Rise Time

84

ns

td(off)

Turn-Off Delay Time

502

ns

tf

Fall Time

206

ns

Eon

Turn-On Switching Loss

86.3

mJ

Eoff

Turn-Off Switching Loss

99.1

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=800A,

RG=0.5Ω, LS=40nH,

VGE=-8V/+15V,

Tvj=175oC

174

ns

tr

Rise Time

90

ns

td(off)

Turn-Off Delay Time

531

ns

tf

Fall Time

257

ns

Eon

Turn-On Switching Loss

99.8

mJ

Eoff

Turn-Off Switching Loss

105

mJ

ISC

SC Data

tP≤8μs,VGE=15V,

Tvj=150oC,

VCC=800V, VCEM 1200V

2600

A

tP≤6μs,VGE=15V,

Tvj=175oC,

VCC=800V, VCEM 1200V

2500

A

Diode Characteristics TC=25oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

VF

Diode Forward Voltage

IF=900A,VGE=0V,Tvj=25oC

1.60

2.00

V

IF=900A,VGE=0V,Tvj=125oC

1.60

IF=900A,VGE=0V,Tvj=175oC

1.50

Qr

Recovered Charge

VR=600V,IF=800A,

-di/dt=7778A/μs,VGE=-8V, LS=40nH,Tvj=25oC

47.7

μC

IRM

Peak Reverse

Recovery Current

400

A

Erec

Reverse Recovery Energy

13.6

mJ

Qr

Recovered Charge

VR=600V,IF=800A,

-di/dt=7017A/μs,VGE=-8V, LS=40nH,Tvj=125oC

82.7

μC

IRM

Peak Reverse

Recovery Current

401

A

Erec

Reverse Recovery Energy

26.5

mJ

Qr

Recovered Charge

VR=600V,IF=800A,

-di/dt=6380A/μs,VGE=-8V, LS=40nH,Tvj=175oC

110

μC

IRM

Peak Reverse

Recovery Current

413

A

Erec

Reverse Recovery Energy

34.8

mJ

NTC Characteristics TC=25oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

R25

Rated Resistance

5.0

∆R/R

Deviation of R100

TC=100 oC,R100=493.3Ω

-5

5

%

P25

Power

Dissipation

20.0

mW

B25/50

B-value

R2=R25exp[B25/50(1/T2- 1/(298.15K))]

3375

K

B25/80

B-value

R2=R25exp[B25/80(1/T2- 1/(298.15K))]

3411

K

B25/100

B-value

R2=R25exp[B25/100(1/T2- 1/(298.15K))]

3433

K

Module Characteristics TC=25oC unless otherwise noted

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

20

nH

RCC’+EE’

Module Lead Resistance, Terminal to Chip

0.80

RthJC

Junction-to-Case (perIGBT) Junction-to-Case (per Diode)

0.032

0.049

K/W

RthCH

Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module)

0.030

0.046

0.009

K/W

M

Terminal Connection Torque, Screw M6 Mounting Torque, Screw M5

3.0 3.0

6.0 6.0

N.m

G

Weight of Module

350

g

Outline

image(c537ef1333).png

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