Brief introduction
IGBT module, produced by STARPOWER. 1200V 800A.
Features
-
Low VCE(sat) Trench IGBT technology
- Short circuit capability
- VCE(sat) with positive temperature coefficient
-
Maximum junction temperature 175oC
- Low inductance case
-
Fast & soft reverse recovery anti-parallel FWD
-
Isolated copper baseplate using DBC technology
Typical Applications
- Hybrid and electric vehicle
- Inverter for motor drive
- Uninterruptible power supply
Absolute Maximum Ratings TC=25oC unless otherwise noted
IGBT
Symbol |
Description |
Values |
Unit |
VCES |
Collector-Emitter Voltage |
1200 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
IC |
Collector Current @ TC=100oC |
800 |
A |
ICM |
Pulsed Collector Current tp=1ms |
1600 |
A |
PD |
Maximum Power Dissipation @ Tvj=175oC |
4687 |
W |
Diode
Symbol |
Description |
Values |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
1200 |
V |
IF |
Diode Continuous Forward Current |
900 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
1800 |
A |
IFSM |
Surge Forward Current tp=10ms @ Tvj=125oC @ Tvj=175oC |
2392
2448
|
A |
I2t |
I2t-value,tp=10ms @ Tvj=125oC @ Tvj=175oC |
28608
29964
|
A2s |
Module
Symbol |
Description |
Value |
Unit |
Tvjmax |
Maximum Junction Temperature |
175 |
oC |
Tvjop |
Operating Junction Temperature |
-40 to +150 |
oC |
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
2500 |
V |
IGBT Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat)
|
Collector to Emitter Saturation Voltage
|
IC=800A,VGE=15V, Tvj=25oC |
|
1.40 |
1.85 |
V
|
IC=800A,VGE=15V, Tvj=125oC |
|
1.60 |
|
IC=800A,VGE=15V, Tvj=175oC |
|
1.60 |
|
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=24.0mA,VCE=VGE, Tvj=25oC |
5.5 |
6.3 |
7.0 |
V |
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tvj=25oC |
|
|
1.0 |
mA |
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tvj=25oC |
|
|
400 |
nA |
RGint |
Internal Gate Resistance |
|
|
0.5 |
|
Ω |
Cies |
Input Capacitance |
VCE=25V,f=100kHz, VGE=0V |
|
28.4 |
|
nF |
Cres |
Reverse Transfer Capacitance |
|
0.15 |
|
nF |
QG |
Gate Charge |
VGE=-15…+15V |
|
2.05 |
|
μC |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=800A, RG=0.5Ω, LS=40nH, VGE=-8V/+15V,
Tvj=25oC
|
|
168 |
|
ns |
tr |
Rise Time |
|
78 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
428 |
|
ns |
tf |
Fall Time |
|
123 |
|
ns |
Eon |
Turn-On Switching Loss |
|
43.4 |
|
mJ |
Eoff |
Turn-Off Switching Loss |
|
77.0 |
|
mJ |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=800A,
RG=0.5Ω, LS=40nH,
VGE=-8V/+15V,
Tvj=125oC
|
|
172 |
|
ns |
tr |
Rise Time |
|
84 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
502 |
|
ns |
tf |
Fall Time |
|
206 |
|
ns |
Eon |
Turn-On Switching Loss |
|
86.3 |
|
mJ |
Eoff |
Turn-Off Switching Loss |
|
99.1 |
|
mJ |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=800A,
RG=0.5Ω, LS=40nH,
VGE=-8V/+15V,
Tvj=175oC
|
|
174 |
|
ns |
tr |
Rise Time |
|
90 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
531 |
|
ns |
tf |
Fall Time |
|
257 |
|
ns |
Eon |
Turn-On Switching Loss |
|
99.8 |
|
mJ |
Eoff |
Turn-Off Switching Loss |
|
105 |
|
mJ |
|
ISC
|
SC Data
|
tP≤8μs,VGE=15V,
Tvj=150oC,
VCC=800V, VCEM ≤1200V
|
|
2600
|
|
A
|
|
tP≤6μs,VGE=15V,
Tvj=175oC,
VCC=800V, VCEM ≤1200V
|
|
2500
|
|
A
|
Diode Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
VF
|
Diode Forward Voltage |
IF=900A,VGE=0V,Tvj=25oC |
|
1.60 |
2.00 |
V
|
IF=900A,VGE=0V,Tvj=125oC |
|
1.60 |
|
IF=900A,VGE=0V,Tvj=175oC |
|
1.50 |
|
Qr |
Recovered Charge |
VR=600V,IF=800A,
-di/dt=7778A/μs,VGE=-8V, LS=40nH,Tvj=25oC
|
|
47.7 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
400 |
|
A |
Erec |
Reverse Recovery Energy |
|
13.6 |
|
mJ |
Qr |
Recovered Charge |
VR=600V,IF=800A,
-di/dt=7017A/μs,VGE=-8V, LS=40nH,Tvj=125oC
|
|
82.7 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
401 |
|
A |
Erec |
Reverse Recovery Energy |
|
26.5 |
|
mJ |
Qr |
Recovered Charge |
VR=600V,IF=800A,
-di/dt=6380A/μs,VGE=-8V, LS=40nH,Tvj=175oC
|
|
110 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
413 |
|
A |
Erec |
Reverse Recovery Energy |
|
34.8 |
|
mJ |
NTC Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
R25 |
Rated Resistance |
|
|
5.0 |
|
kΩ |
∆R/R |
Deviation of R100 |
TC=100 oC,R100=493.3Ω |
-5 |
|
5 |
% |
P25 |
Power
Dissipation
|
|
|
|
20.0 |
mW |
B25/50 |
B-value |
R2=R25exp[B25/50(1/T2- 1/(298.15K))] |
|
3375 |
|
K |
B25/80 |
B-value |
R2=R25exp[B25/80(1/T2- 1/(298.15K))] |
|
3411 |
|
K |
B25/100 |
B-value |
R2=R25exp[B25/100(1/T2- 1/(298.15K))] |
|
3433 |
|
K |
Module Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
LCE |
Stray Inductance |
|
20 |
|
nH |
RCC’+EE’ |
Module Lead Resistance, Terminal to Chip |
|
0.80 |
|
mΩ |
RthJC |
Junction-to-Case (perIGBT) Junction-to-Case (per Diode) |
|
|
0.032
0.049
|
K/W |
|
RthCH
|
Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) |
|
0.030
0.046
0.009
|
|
K/W |
M |
Terminal Connection Torque, Screw M6 Mounting Torque, Screw M5 |
3.0 3.0 |
|
6.0 6.0 |
N.m |
G |
Weight of Module |
|
350 |
|
g |
EN
