Brief introduction
IGBT module,produced by STARPOWER. 1200V 600A.
Features
- Low VCE(sat) Trench IGBT technology
- Low switching losses
- 6μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175oC
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper pinfin baseplate using Si3N4AMB technology
Typical Applications
- Automotive application
- Hybrid and electric vehicle
- Inverter for motor drive
Absolute Maximum Ratings TF=25oC unless otherwise noted
IGBT
Symbol |
Description |
Values |
Unit |
VCES |
Collector-Emitter Voltage |
1200 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
ICN |
Implemented Collector Current |
600 |
A |
IC |
Collector Current @ TF=90oC |
450 |
A |
ICM |
Pulsed Collector Current tp=1ms |
1200 |
A |
PD |
Maximum Power Dissipation @ TF=75oC Tj=175oC |
1075 |
W |
Diode
Symbol |
Description |
Values |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
1200 |
V |
IFN |
Implemented Collector Current |
600 |
A |
IF |
Diode Continuous Forward Current |
450 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
1200 |
A |
Module
Symbol |
Description |
Value |
Unit |
Tjmax |
Maximum Junction Temperature |
175 |
oC |
Tjop |
Operating Junction Temperature continuous
For 10s within a period of 30s,occurrence maximum 3000 times over lifetime
|
-40 to +150 +150 to +175 |
oC |
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
2500 |
V |
dCreep |
Terminal to Heatsink Terminal to Terminal |
9.0 9.0 |
mm |
dClear |
Terminal to Heatsink Terminal to Terminal |
4.5 4.5 |
mm |
IGBT Characteristics TF=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
|
VCE(sat)
|
Collector to Emitter Saturation Voltage
|
IC=450A,VGE=15V, Tj=25oC |
|
1.40 |
|
V
|
|
IC=450A,VGE=15V, Tj=150oC |
|
1.65 |
|
|
IC=450A,VGE=15V, Tj=175oC |
|
1.70 |
|
|
IC=600A,VGE=15V, Tj=25oC |
|
1.60 |
|
|
IC=600A,VGE=15V, Tj=150oC |
|
1.90 |
|
|
IC=600A,VGE=15V, Tj=175oC |
|
2.00 |
|
|
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=15.6mA,VCE=VGE, Tj=25oC |
|
6.4 |
|
V |
|
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25oC |
|
|
1.0 |
mA |
|
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25oC |
|
|
400 |
nA |
|
RGint |
Internal Gate Resistance |
|
|
1.67 |
|
Ω |
|
Cies |
Input Capacitance |
VCE=25V,f=100kHz, VGE=0V
|
|
81.2 |
|
nF |
|
Coes |
Output Capacitance |
|
1.56 |
|
nF |
|
Cres |
Reverse Transfer Capacitance |
|
0.53 |
|
nF |
|
QG |
Gate Charge |
VCE =600V,IC =600A, VGE=-8…+15V |
|
5.34 |
|
μC |
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=600A,
RGon=1.0Ω,RGoff=2.2Ω, LS=22nH,
VGE=-8V/+15V, Tj=25oC
|
|
290 |
|
ns |
|
tr |
Rise Time |
|
81 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
895 |
|
ns |
|
tf |
Fall Time |
|
87 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
53.5 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
47.5 |
|
mJ |
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=600A,
RGon=1.0Ω,RGoff=2.2Ω, LS=22nH,
VGE=-8V/+15V, Tj=150oC
|
|
322 |
|
ns |
|
tr |
Rise Time |
|
103 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
1017 |
|
ns |
|
tf |
Fall Time |
|
171 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
84.2 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
63.7 |
|
mJ |
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=600A,
RGon=1.0Ω,RGoff=2.2Ω, LS=22nH,
VGE=-8V/+15V, Tj=175oC
|
|
334 |
|
ns |
|
tr |
Rise Time |
|
104 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
1048 |
|
ns |
|
tf |
Fall Time |
|
187 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
89.8 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
65.4 |
|
mJ |
|
ISC |
SC Data |
tP≤6μs,VGE=15V, |
|
2000 |
|
A |
|
|
|
Tj=175oC,VCC=800V, VCEM≤1200V |
|
|
|
|
|
Diode Characteristics TF=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VF
|
Diode Forward Voltage
|
IF=450A,VGE=0V,Tj=25oC |
|
1.80 |
|
V
|
IF=450A,VGE=0V,Tj=150oC |
|
1.75 |
|
IF=450A,VGE=0V,Tj=175oC |
|
1.70 |
|
IF=600A,VGE=0V,Tj=25oC |
|
1.95 |
|
IF=600A,VGE=0V,Tj=150oC |
|
1.95 |
|
IF=600A,VGE=0V,Tj=175oC |
|
1.90 |
|
Qr |
Recovered Charge |
VR=600V,IF=600A,
-di/dt=7040A/μs,VGE=-8V LS=22nH,Tj=25oC
|
|
22.5 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
304 |
|
A |
Erec |
Reverse Recovery Energy |
|
10.8 |
|
mJ |
Qr |
Recovered Charge |
VR=600V,IF=600A,
-di/dt=5790A/μs,VGE=-8V LS=22nH,Tj=150oC
|
|
46.6 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
336 |
|
A |
Erec |
Reverse Recovery Energy |
|
18.2 |
|
mJ |
Qr |
Recovered Charge |
VR=600V,IF=600A,
-di/dt=5520A/μs,VGE=-8V LS=22nH,Tj=175oC
|
|
49.8 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
346 |
|
A |
Erec |
Reverse Recovery Energy |
|
19.8 |
|
mJ |
NTC Characteristics TF=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
R25 |
Rated Resistance |
|
|
5.0 |
|
kΩ |
∆R/R |
Deviation of R100 |
TC=100 oC,R100=493.3Ω |
-5 |
|
5 |
% |
P25 |
Power
Dissipation
|
|
|
|
20.0 |
mW |
B25/50 |
B-value |
R2=R25exp[B25/50(1/T2- 1/(298.15K))] |
|
3375 |
|
K |
B25/80 |
B-value |
R2=R25exp[B25/80(1/T2- 1/(298.15K))] |
|
3411 |
|
K |
B25/100 |
B-value |
R2=R25exp[B25/100(1/T2- 1/(298.15K))] |
|
3433 |
|
K |
Module Characteristics TF=25oC unless otherwise noted
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
LCE |
Stray Inductance |
|
8 |
|
nH |
RCC’+EE’ |
Module Lead Resistance, Terminal to Chip |
|
0.75 |
|
mΩ |
p |
Maximum Pressure In Cooling Circuit |
|
|
2.5 |
bar |
|
RthJF
|
Junction-to-Cooling Fluid (perIGBT) Junction-to-Cooling Fluid (per Diode) △V/△t=10.0dm3/min,TF=75oC |
|
0.081 0.118 |
0.093 0.136 |
K/W
|
M |
Terminal Connection Torque, Screw M5 Mounting Torque, Screw M4 |
3.6 1.8 |
|
4.4 2.2 |
N.m |
G |
Weight of Module |
|
750 |
|
g |
EN
