1200V 720A Package:P6
Brief introduction
IGBT module,produced by STARPOWER. 1200V 400A.
Features
Typical Applications
Absolute Maximum Ratings TF=25oC unless otherwise noted
IGBT
Symbol |
Description |
Values |
Unit |
VCES |
Collector-Emitter Voltage |
1200 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
ICN |
Implemented Collector Current |
400 |
A |
IC |
Collector Current @ TF=120oC |
250 |
A |
ICM |
Pulsed Collector Current tp=1ms |
800 |
A |
PD |
Maximum Power Dissipation @ TF=75oC Tj=175oC |
1010 |
W |
Diode
Symbol |
Description |
Values |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
1200 |
V |
IFN |
Implemented Collector Current |
400 |
A |
IF |
Diode Continuous Forward Current |
250 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
800 |
A |
I2t |
I2t-value,tp=10ms @ Tj=125oC @ Tj=150oC |
17860 15664 |
A2s |
Module
Symbol |
Description |
Value |
Unit |
Tjmax |
Maximum Junction Temperature |
175 |
oC |
Tjop |
Operating Junction Temperature continuous For 10s within a period of 30s,occurrence maximum 3000 times over lifetime |
-40 to +150 +150 to +175 |
oC |
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
3000 |
V |
IGBT Characteristics TF=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=250A,VGE=15V, Tj=25oC |
|
1.45 |
1.80 |
V |
IC=250A,VGE=15V, Tj=125oC |
|
1.65 |
|
|||
IC=250A,VGE=15V, Tj=150oC |
|
1.70 |
|
|||
IC=380A,VGE=15V, Tj=25oC |
|
1.70 |
|
|||
IC=380A,VGE=15V, Tj=150oC |
|
2.15 |
|
|||
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=9.75mA,VCE=VGE, Tj=25oC |
5.6 |
6.2 |
6.8 |
V |
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25oC |
|
|
1.0 |
mA |
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25oC |
|
|
400 |
nA |
RGint |
Internal Gate Resistance |
|
|
2.4 |
|
Ω |
Cies |
Input Capacitance |
VCE=25V,f=100kHz, VGE=0V |
|
33.6 |
|
nF |
Coes |
Output Capacitance |
|
1.43 |
|
nF |
|
Cres |
Reverse Transfer Capacitance |
|
0.82 |
|
nF |
|
QG |
Gate Charge |
VCE =600V,IC =250A, VGE=-8…+15V |
|
1.98 |
|
μC |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=250A, RG=2.2Ω,LS=24nH, VGE=-8V/+15V, Tj=25oC |
|
231 |
|
ns |
tr |
Rise Time |
|
50 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
545 |
|
ns |
|
tf |
Fall Time |
|
172 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
19.6 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
23.2 |
|
mJ |
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=250A, RG=2.2Ω,LS=24nH, VGE=-8V/+15V, Tj=125oC |
|
241 |
|
ns |
tr |
Rise Time |
|
57 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
619 |
|
ns |
|
tf |
Fall Time |
|
247 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
26.6 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
28.7 |
|
mJ |
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=250A, RG=2.2Ω,LS=24nH, VGE=-8V/+15V, Tj=150oC |
|
245 |
|
ns |
tr |
Rise Time |
|
57 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
641 |
|
ns |
|
tf |
Fall Time |
|
269 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
30.1 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
30.9 |
|
mJ |
|
ISC |
SC Data |
tP≤6μs,VGE=15V, Tj=150oC,VCC=800V, VCEM≤1200V |
|
1200 |
|
A |
Diode Characteristics TF=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VF |
Diode Forward Voltage |
IF=250A,VGE=0V,Tj=25oC |
|
1.50 |
1.90 |
V |
IF=250A,VGE=0V,Tj=125oC |
|
1.45 |
|
|||
IF=250A,VGE=0V,Tj=150oC |
|
1.40 |
|
|||
IF=380A,VGE=0V,Tj=25oC |
|
1.65 |
|
|||
IF=380A,VGE=0V,Tj=150oC |
|
1.60 |
|
|||
Qr |
Recovered Charge |
VR=600V,IF=250A, -di/dt=4860A/μs,VGE=-8V LS=24nH,Tj=25oC |
|
9.10 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
160 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
4.39 |
|
mJ |
|
Qr |
Recovered Charge |
VR=600V,IF=250A, -di/dt=4300A/μs,VGE=-8V LS=24nH,Tj=125oC |
|
21.4 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
192 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
8.43 |
|
mJ |
|
Qr |
Recovered Charge |
VR=600V,IF=250A, -di/dt=4120A/μs,VGE=-8V LS=24nH,Tj=150oC |
|
25.7 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
203 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
9.97 |
|
mJ |
NTC Characteristics TF=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
R25 |
Rated Resistance |
|
|
5.0 |
|
kΩ |
∆R/R |
Deviation of R100 |
TC=100 oC,R100=493.3Ω |
-5 |
|
5 |
% |
P25 |
Power Dissipation |
|
|
|
20.0 |
mW |
B25/50 |
B-value |
R2=R25exp[B25/50(1/T2- 1/(298.15K))] |
|
3375 |
|
K |
B25/80 |
B-value |
R2=R25exp[B25/80(1/T2- 1/(298.15K))] |
|
3411 |
|
K |
B25/100 |
B-value |
R2=R25exp[B25/100(1/T2- 1/(298.15K))] |
|
3433 |
|
K |
Module Characteristics TF=25oC unless otherwise noted
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
LCE |
Stray Inductance |
|
8 |
|
nH |
RCC’+EE’ |
Module Lead Resistance, Terminal to Chip |
|
0.75 |
|
mΩ |
△p |
△V/△t=10.0dm3/min,TF=75oC |
|
64 |
|
mbar |
p |
Maximum Pressure In Cooling Circuit |
|
|
2.5 |
bar |
RthJF |
Junction-to-Cooling Fluid (perIGBT) Junction-to-Cooling Fluid (per Diode) |
|
|
0.099 0.128 |
K/W |
M |
Terminal Connection Torque, Screw M5 Mounting Torque, Screw M4 |
3.6 1.8 |
|
4.4 2.2 |
N.m |
G |
Weight of Module |
|
750 |
|
g |
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