Brief introduction
IGBT module,produced by STARPOWER. 1200V 400A.
Features
- NPT IGBT technology
- 10μs short circuit capability
- Low switching losses
- VCE(sat) with positive temperature coefficient
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology
Typical Applications
- Inverter for motor drive
- AC and DC servo drive amplifier
- Uninterruptible power supply
Absolute Maximum Ratings TF=25oC unless otherwise noted
IGBT
Symbol |
Description |
Value |
Unit |
VCES |
Collector-Emitter Voltage |
1200 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
IC |
Collector Current @ TC=25oC @ TC=100oC |
636
400
|
A |
ICM |
Pulsed Collector Current tp=1ms |
800 |
A |
PD |
Maximum Power Dissipation @ Tvj=175oC |
2083 |
W |
Diode
Symbol |
Description |
Value |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
1200 |
V |
IF |
Diode Continuous Forward Current |
400 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
800 |
A |
Module
Symbol |
Description |
Value |
Unit |
Tvjmax |
Maximum Junction Temperature |
175 |
oC |
Tvjop |
Operating Junction Temperature |
-40 to +150 |
oC |
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
2500 |
V |
IGBT Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat)
|
Collector to Emitter Saturation Voltage
|
IC=400A,VGE=15V, Tvj=25oC |
|
1.75 |
2.20 |
V
|
IC=400A,VGE=15V, Tvj=125oC |
|
2.00 |
|
IC=400A,VGE=15V, Tvj=150oC |
|
2.05 |
|
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=14.4mA,VCE=VGE, Tvj=25oC |
5.6 |
6.2 |
6.8 |
V |
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tvj=25oC |
|
|
1.0 |
mA |
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tvj=25oC |
|
|
400 |
nA |
RGint |
Internal Gate Resistance |
|
|
0.5 |
|
Ω |
Cies |
Input Capacitance |
VCE=25V,f=1MHz, VGE=0V |
|
37.3 |
|
nF |
Cres |
Reverse Transfer Capacitance |
|
1.04 |
|
nF |
QG |
Gate Charge |
VGE=-15 …+15V |
|
2.80 |
|
μC |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=400A, RG=2.0Ω, LS=50nH , VGE=±15V, Tvj=25oC
|
|
223 |
|
ns |
tr |
Rise Time |
|
49 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
334 |
|
ns |
tf |
Fall Time |
|
190 |
|
ns |
Eon |
Turn-On Switching Loss |
|
17.9 |
|
mJ |
Eoff |
Turn-Off Switching Loss |
|
28.7 |
|
mJ |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=400A, RG=2.0Ω, LS=50nH , VGE=±15V, Tvj=125oC
|
|
230 |
|
ns |
tr |
Rise Time |
|
54 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
385 |
|
ns |
tf |
Fall Time |
|
300 |
|
ns |
Eon |
Turn-On Switching Loss |
|
29.4 |
|
mJ |
Eoff |
Turn-Off Switching Loss |
|
41.2 |
|
mJ |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=400A, RG=2.0Ω, LS=50nH , VGE=±15V, Tvj=150oC
|
|
228 |
|
ns |
tr |
Rise Time |
|
57 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
393 |
|
ns |
tf |
Fall Time |
|
315 |
|
ns |
Eon |
Turn-On Switching Loss |
|
32.3 |
|
mJ |
Eoff |
Turn-Off Switching Loss |
|
42.9 |
|
mJ |
|
ISC
|
SC Data
|
tP≤10μs,VGE=15V,
Tvj=150oC,VCC=800V, VCEM≤1200V
|
|
1600
|
|
A
|
Diode Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VF
|
Diode Forward Voltage |
IF=400A,VGE=0V,Tvj=25oC |
|
1.85 |
2.30 |
V
|
IF=400A,VGE=0V,Tvj=125oC |
|
1.90 |
|
IF=400A,VGE=0V,Tvj=150oC |
|
1.95 |
|
Qr |
Recovered Charge |
VR=600V,IF=400A,
-di/dt=8030A/μs, LS=50nH, VGE=-15V,Tvj=25oC
|
|
33.6 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
374 |
|
A |
Erec |
Reverse Recovery Energy |
|
13.6 |
|
mJ |
Qr |
Recovered Charge |
VR=600V,IF=400A,
-di/dt=7030A/μs, LS=50nH, VGE=-15V,Tvj=125oC
|
|
67.5 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
446 |
|
A |
Erec |
Reverse Recovery Energy |
|
28.2 |
|
mJ |
Qr |
Recovered Charge |
VR=600V,IF=400A,
-di/dt=6880A/μs, LS=50nH, VGE=-15V, Tvj=150oC
|
|
75.5 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
452 |
|
A |
Erec |
Reverse Recovery Energy |
|
31.4 |
|
mJ |
Module Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
LCE |
Stray Inductance |
|
|
20 |
nH |
RCC’+EE’ |
Module Lead Resistance, Terminal to Chip |
|
0.35 |
|
mΩ |
RthJC |
Junction-to-Case (perIGBT) Junction-to-Case (per Diode) |
|
|
0.072 0.113 |
K/W |
|
RthCH
|
Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) |
|
0.023 0.036 0.010 |
|
K/W |
M |
Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6 |
2.5 3.0 |
|
5.0 5.0 |
N.m |
G |
Weight of Module |
|
300 |
|
g |
EN
