1200V 200A
Brief introduction
IGBT module, produced by STARPOWER. 1200V 200A.
Features
Typical Applications
Absolute Maximum Ratings TC=25oC unless otherwise noted
T1,T4 IGBT
Symbol | Description | Values | Unit |
VCES | Collector-Emitter Voltage | 1200 | V |
VGES | Gate-Emitter Voltage | ±20 | V |
IC | Collector Current @ TC=25oC @ TC= 100oC | 339 200 | A |
ICM | Pulsed Collector Current tp= 1ms | 400 | A |
PD | Maximum Power Dissipation @ Tj=175oC | 1456 | W |
D1,D4 Diode
Symbol | Description | Value | Unit |
VRRM | Repetitive Peak Reverse Voltage | 1200 | V |
IF | Diode Continuous Forward Current | 75 | A |
IFM | Diode Maximum Forward Current tp= 1ms | 150 | A |
T2,T3 IGBT
Symbol | Description | Value | Unit |
VCES | Collector-Emitter Voltage | 650 | V |
VGES | Gate-Emitter Voltage | ±20 | V |
IC | Collector Current @ TC=25oC @ TC=95oC | 158 100 | A |
ICM | Pulsed Collector Current tp= 1ms | 200 | A |
PD | Maximum Power Dissipation @ Tj=175oC | 441 | W |
D2,D3 Diode
Symbol | Description | Value | Unit |
VRRM | Repetitive Peak Reverse Voltage | 650 | V |
IF | Diode Continuous Forward Current | 100 | A |
IFM | Diode Maximum Forward Current tp= 1ms | 200 | A |
Module
Symbol | Description | Value | Unit |
Tjmax | Maximum Junction Temperature | 175 | oC |
Tjop | Operating Junction Temperature | -40 to +150 | oC |
TSTG | Storage Temperature Range | -40 to +125 | oC |
VISO | Isolation Voltage RMS,f=50Hz,t=1min | 2500 | V |
T1,T4 IGBT Characteristics TC=25oC unless otherwise noted
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
VCE(sat) |
Collector to Emitter Saturation Voltage | IC= 100A,VGE= 15V, Tj=25oC |
| 1.40 | 1.85 |
V |
IC= 100A,VGE= 15V, Tj=125oC |
| 1.65 |
| |||
IC= 100A,VGE= 15V, Tj=150oC |
| 1.70 |
| |||
VGE(th) | Gate-Emitter Threshold Voltage | IC=5.0mA,VCE=VGE, Tj=25oC | 5.2 | 6.0 | 6.8 | V |
ICES | Collector Cut-Off Current | VCE=VCES,VGE=0V, Tj=25oC |
|
| 1.0 | mA |
IGES | Gate-Emitter Leakage Current | VGE=VGES,VCE=0V, Tj=25oC |
|
| 400 | nA |
RGint | Internal Gate Resistance |
|
| 3.8 |
| Ω |
Cies | Input Capacitance | VCE=25V,f=1MHz, VGE=0V |
| 20.7 |
| nF |
Cres | Reverse Transfer Capacitance |
| 0.58 |
| nF | |
QG | Gate Charge | VGE=- 15…+15V |
| 1.56 |
| μC |
td(on) | Turn-On Delay Time |
VCC=400V,IC= 100A, RG= 1. 1Ω,VGE=±15V, Tj=25oC |
| 142 |
| ns |
tr | Rise Time |
| 25 |
| ns | |
td(off) | Turn-Off Delay Time |
| 352 |
| ns | |
tf | Fall Time |
| 33 |
| ns | |
Eon | Turn-On Switching Loss |
| 1.21 |
| mJ | |
Eoff | Turn-Off Switching Loss |
| 3.90 |
| mJ | |
td(on) | Turn-On Delay Time |
VCC=400V,IC= 100A, RG= 1. 1Ω,VGE=±15V, Tj= 125oC |
| 155 |
| ns |
tr | Rise Time |
| 29 |
| ns | |
td(off) | Turn-Off Delay Time |
| 440 |
| ns | |
tf | Fall Time |
| 61 |
| ns | |
Eon | Turn-On Switching Loss |
| 2.02 |
| mJ | |
Eoff | Turn-Off Switching Loss |
| 5.83 |
| mJ | |
td(on) | Turn-On Delay Time |
VCC=400V,IC= 100A, RG= 1. 1Ω,VGE=±15V, Tj= 150oC |
| 161 |
| ns |
tr | Rise Time |
| 30 |
| ns | |
td(off) | Turn-Off Delay Time |
| 462 |
| ns | |
tf | Fall Time |
| 66 |
| ns | |
Eon | Turn-On Switching Loss |
| 2.24 |
| mJ | |
Eoff | Turn-Off Switching Loss |
| 6.49 |
| mJ | |
ISC |
SC Data | tP≤10μs,VGE=15V, Tj=150oC,VCC=800V, VCEM≤1200V |
|
800 |
|
A |
D1,D4 Diode Characteristics TC=25oC unless otherwise noted
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
VF | Diode Forward Voltage | IF=75A,VGE=0V,Tj=25oC |
| 1.70 | 2.15 |
V |
IF=75A,VGE=0V,Tj= 125oC |
| 1.65 |
| |||
IF=75A,VGE=0V,Tj= 150oC |
| 1.65 |
| |||
Qr | Recovered Charge | VR=400V,IF=75A, -di/dt=3500A/μs,VGE=- 15V Tj=25oC |
| 8.7 |
| μC |
IRM | Peak Reverse Recovery Current |
| 122 |
| A | |
Erec | Reverse Recovery Energy |
| 2.91 |
| mJ | |
Qr | Recovered Charge | VR=400V,IF=75A, -di/dt=3500A/μs,VGE=- 15V Tj= 125oC |
| 17.2 |
| μC |
IRM | Peak Reverse Recovery Current |
| 143 |
| A | |
Erec | Reverse Recovery Energy |
| 5.72 |
| mJ | |
Qr | Recovered Charge | VR=400V,IF=75A, -di/dt=3500A/μs,VGE=- 15V Tj= 150oC |
| 19.4 |
| μC |
IRM | Peak Reverse Recovery Current |
| 152 |
| A | |
Erec | Reverse Recovery Energy |
| 6.30 |
| mJ |
T2,T3 IGBT Characteristics TC=25oC unless otherwise noted
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
VCE(sat) |
Collector to Emitter Saturation Voltage | IC= 100A,VGE= 15V, Tj=25oC |
| 1.45 | 1.90 |
V |
IC= 100A,VGE= 15V, Tj=125oC |
| 1.60 |
| |||
IC= 100A,VGE= 15V, Tj=150oC |
| 1.70 |
| |||
VGE(th) | Gate-Emitter Threshold Voltage | IC= 1.60mA,VCE=VGE, Tj=25oC | 5.0 | 5.8 | 6.5 | V |
ICES | Collector Cut-Off Current | VCE=VCES,VGE=0V, Tj=25oC |
|
| 1.0 | mA |
IGES | Gate-Emitter Leakage Current | VGE=VGES,VCE=0V, Tj=25oC |
|
| 400 | nA |
RGint | Internal Gate Resistance |
|
| 2.0 |
| Ω |
Cies | Input Capacitance | VCE=25V,f=1MHz, VGE=0V |
| 11.6 |
| nF |
Cres | Reverse Transfer Capacitance |
| 0.23 |
| nF | |
QG | Gate Charge | VGE=- 15…+15V |
| 0.69 |
| μC |
td(on) | Turn-On Delay Time |
VCC=400V,IC= 100A, RG=3.3Ω,VGE=±15V, Tj=25oC |
| 44 |
| ns |
tr | Rise Time |
| 20 |
| ns | |
td(off) | Turn-Off Delay Time |
| 200 |
| ns | |
tf | Fall Time |
| 28 |
| ns | |
Eon | Turn-On Switching Loss |
| 1.48 |
| mJ | |
Eoff | Turn-Off Switching Loss |
| 2.48 |
| mJ | |
td(on) | Turn-On Delay Time |
VCC=400V,IC= 100A, RG=3.3Ω,VGE=±15V, Tj= 125oC |
| 48 |
| ns |
tr | Rise Time |
| 24 |
| ns | |
td(off) | Turn-Off Delay Time |
| 216 |
| ns | |
tf | Fall Time |
| 40 |
| ns | |
Eon | Turn-On Switching Loss |
| 2.24 |
| mJ | |
Eoff | Turn-Off Switching Loss |
| 3.28 |
| mJ | |
td(on) | Turn-On Delay Time |
VCC=400V,IC= 100A, RG=3.3Ω,VGE=±15V, Tj= 150oC |
| 52 |
| ns |
tr | Rise Time |
| 24 |
| ns | |
td(off) | Turn-Off Delay Time |
| 224 |
| ns | |
tf | Fall Time |
| 48 |
| ns | |
Eon | Turn-On Switching Loss |
| 2.64 |
| mJ | |
Eoff | Turn-Off Switching Loss |
| 3.68 |
| mJ | |
ISC |
SC Data | tP≤6μs,VGE= 15V, Tj=150oC,VCC=360V, VCEM≤650V |
|
500 |
|
A |
D2,D3 Diode Characteristics TC=25oC unless otherwise noted
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
VF | Diode Forward Voltage | IF= 100A,VGE=0V,Tj=25oC |
| 1.55 | 2.00 |
V |
IF= 100A,VGE=0V,Tj= 125oC |
| 1.50 |
| |||
IF= 100A,VGE=0V,Tj= 150oC |
| 1.45 |
| |||
Qr | Recovered Charge | VR=400V,IF= 100A, -di/dt=4070A/μs,VGE=- 15V Tj=25oC |
| 3.57 |
| μC |
IRM | Peak Reverse Recovery Current |
| 99 |
| A | |
Erec | Reverse Recovery Energy |
| 1.04 |
| mJ | |
Qr | Recovered Charge | VR=400V,IF= 100A, -di/dt=4070A/μs,VGE=- 15V Tj= 125oC |
| 6.49 |
| μC |
IRM | Peak Reverse Recovery Current |
| 110 |
| A | |
Erec | Reverse Recovery Energy |
| 1.70 |
| mJ | |
Qr | Recovered Charge | VR=400V,IF= 100A, -di/dt=4070A/μs,VGE=- 15V Tj= 150oC |
| 7.04 |
| μC |
IRM | Peak Reverse Recovery Current |
| 110 |
| A | |
Erec | Reverse Recovery Energy |
| 1.81 |
| mJ |
NTC Characteristics TC=25oC unless otherwise noted
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
R25 | Rated Resistance |
|
| 5.0 |
| kΩ |
ΔR/R | Deviation of R100 | TC= 100 oC,R100=493.3Ω | -5 |
| 5 | % |
P25 | Power Dissipation |
|
|
| 20.0 | mW |
B25/50 | B-value | R2=R25exp[B25/50(1/T2- 1/(298.15K))] |
| 3375 |
| K |
B25/80 | B-value | R2=R25exp[B25/80(1/T2- 1/(298.15K))] |
| 3411 |
| K |
B25/100 | B-value | R2=R25exp[B25/100(1/T2- 1/(298.15K))] |
| 3433 |
| K |
Module Characteristics TC=25oC unless otherwise noted
Symbol | Parameter | Min. | Typ. | Max. | Unit |
RthJC | Junction-to-Case (per T1,T4 IGBT) Junction-to-Case (per D1,D4 Diode) Junction-to-Case (per T2,T3 IGBT) Junction-to-Case (per D2,D3 Diode) |
| 0.094 0.405 0.309 0.544 | 0.103 0.446 0.340 0.598 |
K/W |
RthCH | Case-to-Heatsink (per T1,T4 IGBT) Case-to-Heatsink (per D1,D4 Diode) Case-to-Heatsink (per T2,T3 IGBT) Case-to-Heatsink (per D2,D3 Diode) Case-to-Heatsink (per Module) |
| 0.126 0.547 0.417 0.733 0.037 |
|
K/W |
F | Mounting Force Per Clamp | 40 |
| 80 | N |
G | Weight of Module |
| 39 |
| g |
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