1200V 200A,3-level
Brief introduction
IGBT module, 3-level ,produced by STARPOWER. 1200V 200A.
Features
Typical Applications
Absolute Maximum Ratings TC=25oC unless otherwise noted
T1-T4 IGBT
Symbol | Description | Value | Unit |
VCES | Collector-Emitter Voltage | 1200 | V |
VGES | Gate-Emitter Voltage | ±20 | V |
IC | Collector Current @ TC=25oC @ TC= 100oC | 337 200 | A |
ICM | Pulsed Collector Current tp=1ms | 400 | A |
PD | Maximum Power Dissipation @ Tj=175oC | 1162 | W |
D1-D4 Diode
Symbol | Description | Value | Unit |
VRRM | Repetitive Peak Reverse Voltage | 1200 | V |
IF | Diode Continuous Forward Current | 200 | A |
IFM | Diode Maximum Forward Current tp=1ms | 400 | A |
D5,D6 Diode
Symbol | Description | Value | Unit |
VRRM | Repetitive Peak Reverse Voltage | 1200 | V |
IF | Diode Continuous Forward Current | 200 | A |
IFM | Diode Maximum Forward Current tp=1ms | 400 | A |
Module
Symbol | Description | Value | Unit |
Tjmax | Maximum Junction Temperature | 175 | oC |
Tjop | Operating Junction Temperature | -40 to +150 | oC |
TSTG | Storage Temperature Range | -40 to +125 | oC |
VISO | Isolation Voltage RMS,f=50Hz,t=1min | 2500 | V |
T1-T4 IGBT Characteristics TC=25oC unless otherwise noted
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
VCE(sat) |
Collector to Emitter Saturation Voltage | IC=200A,VGE=15V, Tj=25oC |
| 1.70 | 2.15 |
V |
IC=200A,VGE=15V, Tj=125oC |
| 1.95 |
| |||
IC=200A,VGE=15V, Tj=150oC |
| 2.00 |
| |||
VGE(th) | Gate-Emitter Threshold Voltage | IC=5.0mA,VCE=VGE, Tj=25oC | 5.2 | 6.0 | 6.8 | V |
ICES | Collector Cut-Off Current | VCE=VCES,VGE=0V, Tj=25oC |
|
| 1.0 | mA |
IGES | Gate-Emitter Leakage Current | VGE=VGES,VCE=0V, Tj=25oC |
|
| 400 | nA |
RGint | Internal Gate Resistance |
|
| 4.0 |
| Ω |
Cies | Input Capacitance | VCE=25V,f=1MHz, VGE=0V |
| 20.7 |
| nF |
Cres | Reverse Transfer Capacitance |
| 0.58 |
| nF | |
QG | Gate Charge | VGE=- 15…+15V |
| 1.55 |
| μC |
td(on) | Turn-On Delay Time |
VCC=600V,IC=200A, RG= 1. 1Ω,VGE=±15V, Tj=25oC |
| 150 |
| ns |
tr | Rise Time |
| 32 |
| ns | |
td(off) | Turn-Off Delay Time |
| 330 |
| ns | |
tf | Fall Time |
| 93 |
| ns | |
Eon | Turn-On Switching Loss |
| 11.2 |
| mJ | |
Eoff | Turn-Off Switching Loss |
| 11.3 |
| mJ | |
td(on) | Turn-On Delay Time |
VCC=600V,IC=200A, RG= 1. 1Ω,VGE=±15V, Tj= 125oC |
| 161 |
| ns |
tr | Rise Time |
| 37 |
| ns | |
td(off) | Turn-Off Delay Time |
| 412 |
| ns | |
tf | Fall Time |
| 165 |
| ns | |
Eon | Turn-On Switching Loss |
| 19.8 |
| mJ | |
Eoff | Turn-Off Switching Loss |
| 17.0 |
| mJ | |
td(on) | Turn-On Delay Time |
VCC=600V,IC=200A, RG= 1. 1Ω,VGE=±15V, Tj= 150oC |
| 161 |
| ns |
tr | Rise Time |
| 43 |
| ns | |
td(off) | Turn-Off Delay Time |
| 433 |
| ns | |
tf | Fall Time |
| 185 |
| ns | |
Eon | Turn-On Switching Loss |
| 21.9 |
| mJ | |
Eoff | Turn-Off Switching Loss |
| 19.1 |
| mJ | |
ISC |
SC Data | tP≤10μs,VGE=15V, Tj=150oC,VCC=900V, VCEM≤1200V |
|
800 |
|
A |
D1-D4 Diode Characteristics TC=25oC unless otherwise noted
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
VF | Diode Forward Voltage | IF=200A,VGE=0V,Tj=25oC |
| 1.65 | 2.10 |
V |
IF=200A,VGE=0V,Tj= 125oC |
| 1.65 |
| |||
IF=200A,VGE=0V,Tj= 150oC |
| 1.65 |
| |||
Qr | Recovered Charge | VR=600V,IF=200A, -di/dt=5400A/μs,VGE=- 15V Tj=25oC |
| 17.6 |
| μC |
IRM | Peak Reverse Recovery Current |
| 228 |
| A | |
Erec | Reverse Recovery Energy |
| 7.7 |
| mJ | |
Qr | Recovered Charge | VR=600V,IF=200A, -di/dt=5400A/μs,VGE=- 15V Tj=125oC |
| 31.8 |
| μC |
IRM | Peak Reverse Recovery Current |
| 238 |
| A | |
Erec | Reverse Recovery Energy |
| 13.8 |
| mJ | |
Qr | Recovered Charge | VR=600V,IF=200A, -di/dt=5400A/μs,VGE=- 15V Tj=150oC |
| 36.6 |
| μC |
IRM | Peak Reverse Recovery Current |
| 247 |
| A | |
Erec | Reverse Recovery Energy |
| 15.2 |
| mJ |
D5,D6 Diode Characteristics TC=25oC unless otherwise noted
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
VF | Diode Forward Voltage | IF=200A,VGE=0V,Tj=25oC |
| 1.65 | 2.10 |
V |
IF=200A,VGE=0V,Tj= 125oC |
| 1.65 |
| |||
IF=200A,VGE=0V,Tj= 150oC |
| 1.65 |
| |||
Qr | Recovered Charge | VR=600V,IF=200A, -di/dt=5400A/μs,VGE=- 15V Tj=25oC |
| 17.6 |
| μC |
IRM | Peak Reverse Recovery Current |
| 228 |
| A | |
Erec | Reverse Recovery Energy |
| 7.7 |
| mJ | |
Qr | Recovered Charge | VR=600V,IF=200A, -di/dt=5400A/μs,VGE=- 15V Tj=125oC |
| 31.8 |
| μC |
IRM | Peak Reverse Recovery Current |
| 238 |
| A | |
Erec | Reverse Recovery Energy |
| 13.8 |
| mJ | |
Qr | Recovered Charge | VR=600V,IF=200A, -di/dt=5400A/μs,VGE=- 15V Tj=150oC |
| 36.6 |
| μC |
IRM | Peak Reverse Recovery Current |
| 247 |
| A | |
Erec | Reverse Recovery Energy |
| 15.2 |
| mJ |
NTC Characteristics TC=25oC unless otherwise noted
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
R25 | Rated Resistance |
|
| 5.0 |
| kΩ |
ΔR/R | Deviation of R100 | TC= 100 oC,R100=493.3Ω | -5 |
| 5 | % |
P25 | Power Dissipation |
|
|
| 20.0 | mW |
B25/50 | B-value | R2=R25exp[B25/50(1/T2- 1/(298.15K))] |
| 3375 |
| K |
B25/80 | B-value | R2=R25exp[B25/80(1/T2- 1/(298.15K))] |
| 3411 |
| K |
B25/100 | B-value | R2=R25exp[B25/100(1/T2- 1/(298.15K))] |
| 3433 |
| K |
Module Characteristics TC=25oC unless otherwise noted
Symbol | Parameter | Min. | Typ. | Max. | Unit |
RthJC | Junction-to-Case (per T1-T4 IGBT) Junction-to-Case (per D1-D4 Diode) Junction-to-Case (per D5,D6 Diode) |
|
| 0.129 0.237 0.232 | K/W |
RthCH | Case-to-Heatsink (per T1-T4 IGBT) Case-to-Heatsink (per D1-D4 Diode) Case-to-Heatsink (per D5,D6 Diode) Case-to-Heatsink (per Module) |
| 0.073 0.134 0.131 0.010 |
|
K/W |
M | Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6 | 2.5 3.0 |
| 5.0 5.0 |
|
G | Weight of Module |
| 340 |
| g |
Our professional sales team are waiting for your consultation.
You can follow their product list and ask any questions you care about.
EN
