IGBT Module,1200V 200A, Package:C8
Brief introduction
IGBT module,produced by STARPOWER. 1200V 200A.
Features
Typical Applications
Absolute Maximum Ratings TF=25oC unless otherwise noted
IGBT
| Symbol | Description | Values | Unit | 
| VCES | Collector-Emitter Voltage | 1200 | V | 
| VGES | Gate-Emitter Voltage | ±20 | V | 
| IC | Collector Current @ TC=25oC @ TC=100oC | 363 200 | A | 
| ICRM | Repetitive Peak Collector Current tp limited by Tvjop | 400 | A | 
| PD | Maximum Power Dissipation @ Tvj=175oC | 1293 | W | 
Diode
| Symbol | Description | Values | Unit | 
| VRRM | Repetitive Peak Reverse Voltage | 1200 | V | 
| IF | Diode Continuous Forward Current | 200 | A | 
| IFRM | Repetitive Peak Forward Current tp limited by Tvjop | 400 | A | 
Module
| Symbol | Description | Values | Unit | 
| Tvjmax | Maximum Junction Temperature | 175 | oC | 
| Tvjop | Operating Junction Temperature | -40 to +150 | oC | 
| TSTG | Storage Temperature Range | -40 to +125 | oC | 
| VISO | Isolation Voltage RMS,f=50Hz,t=1min | 2500 | V | 
IGBT Characteristics TC=25oC unless otherwise noted
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit | 
| 
 
 VCE(sat) | 
 
 Collector to Emitter Saturation Voltage | IC=200A,VGE=15V, Tvj=25oC | 
 | 1.75 | 2.20 | 
 
 V | 
| IC=200A,VGE=15V, Tvj=125oC | 
 | 2.00 | 
 | |||
| IC=200A,VGE=15V, Tvj=150oC | 
 | 2.05 | 
 | |||
| VGE(th) | Gate-Emitter Threshold Voltage | IC=8.0mA,VCE=VGE, Tvj=25oC | 5.6 | 6.2 | 6.8 | V | 
| ICES | Collector Cut-Off Current | VCE=VCES,VGE=0V, Tvj=25oC | 
 | 
 | 1.0 | mA | 
| IGES | Gate-Emitter Leakage Current | VGE=VGES,VCE=0V, Tvj=25oC | 
 | 
 | 400 | nA | 
| RGint | Internal Gate Resistance | 
 | 
 | 1.0 | 
 | Ω | 
| Cies | Input Capacitance | VCE=25V,f=1MHz, VGE=0V | 
 | 18.6 | 
 | nF | 
| Cres | Reverse Transfer Capacitance | 
 | 0.52 | 
 | nF | |
| QG | Gate Charge | VGE=-15 …+15V | 
 | 1.40 | 
 | μC | 
| td(on) | Turn-On Delay Time | 
 
 VCC=600V,IC=200A, RG=2.0Ω, Ls=50nH, VGE=±15V, Tvj=25oC | 
 | 140 | 
 | ns | 
| tr | Rise Time | 
 | 31 | 
 | ns | |
| td(off) | Turn-Off Delay Time | 
 | 239 | 
 | ns | |
| tf | Fall Time | 
 | 188 | 
 | ns | |
| Eon | Turn-On Switching Loss | 
 | 11.2 | 
 | mJ | |
| Eoff | Turn-Off Switching Loss | 
 | 13.4 | 
 | mJ | |
| td(on) | Turn-On Delay Time | 
 
 VCC=600V,IC=200A, RG=2.0Ω, Ls=50nH, VGE=±15V, Tvj=125oC | 
 | 146 | 
 | ns | 
| tr | Rise Time | 
 | 36 | 
 | ns | |
| td(off) | Turn-Off Delay Time | 
 | 284 | 
 | ns | |
| tf | Fall Time | 
 | 284 | 
 | ns | |
| Eon | Turn-On Switching Loss | 
 | 19.4 | 
 | mJ | |
| Eoff | Turn-Off Switching Loss | 
 | 18.9 | 
 | mJ | |
| td(on) | Turn-On Delay Time | 
 
 VCC=600V,IC=200A, RG=2.0Ω, Ls=50nH, VGE=±15V, Tvj=150oC | 
 | 148 | 
 | ns | 
| tr | Rise Time | 
 | 37 | 
 | ns | |
| td(off) | Turn-Off Delay Time | 
 | 294 | 
 | ns | |
| tf | Fall Time | 
 | 303 | 
 | ns | |
| Eon | Turn-On Switching Loss | 
 | 21.7 | 
 | mJ | |
| Eoff | Turn-Off Switching Loss | 
 | 19.8 | 
 | mJ | |
| 
 ISC | 
 SC Data | tP≤10μs,VGE=15V, Tvj=150oC,VCC=800V, VCEM≤1200V | 
 | 
 800 | 
 | 
 A | 
Diode Characteristics TC=25oC unless otherwise noted
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units | 
| 
 VF | Diode Forward Voltage | IF=200A,VGE=0V,Tvj=25oC | 
 | 1.85 | 2.30 | 
 V | 
| IF=200A,VGE=0V,Tvj=125oC | 
 | 1.90 | 
 | |||
| IF=200A,VGE=0V,Tvj=150oC | 
 | 1.95 | 
 | |||
| Qr | Recovered Charge | 
 VR=600V,IF=200A, -di/dt=5710A/μs, Ls=50nH, VGE=-15V,Tvj=25oC | 
 | 20.0 | 
 | μC | 
| IRM | Peak Reverse Recovery Current | 
 | 220 | 
 | A | |
| Erec | Reverse Recovery Energy | 
 | 7.5 | 
 | mJ | |
| Qr | Recovered Charge | 
 VR=600V,IF=200A, -di/dt=4740A/μs, Ls=50nH, VGE=-15V,Tvj=125oC | 
 | 34.3 | 
 | μC | 
| IRM | Peak Reverse Recovery Current | 
 | 209 | 
 | A | |
| Erec | Reverse Recovery Energy | 
 | 12.9 | 
 | mJ | |
| Qr | Recovered Charge | 
 VR=600V,IF=200A, -di/dt=4400A/μs, Ls=50nH, VGE=-15V,Tvj=150oC | 
 | 38.7 | 
 | μC | 
| IRM | Peak Reverse Recovery Current | 
 | 204 | 
 | A | |
| Erec | Reverse Recovery Energy | 
 | 14.6 | 
 | mJ | 
Module Characteristics TC=25oC unless otherwise noted
| Symbol | Parameter | Min. | Typ. | Max. | Unit | 
| RthJC | Junction-to-Case (perIGBT) Junction-to-Case (per Diode) | 
 | 
 | 0.116 0.185 | K/W | 
| 
 RthCH | Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) | 
 | 0.150 0.239 0.046 | 
 | K/W | 
| M | Terminal Connection Torque, Screw M5 Mounting Torque, Screw M5 | 2.5 2.5 | 
 | 3.5 3.5 | N.m | 
| G | Weight of Module | 
 | 200 | 
 | g | 


Our professional sales team are waiting for your consultation.
You can follow their product list and ask any questions you care about.