Brief introduction
IGBT module,produced by STARPOWER. 1200V 200A.
Features
- NPT IGBT technology
- 10μs short circuit capability
- Low switching losses
- VCE(sat) with positive temperature coefficient
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology
Typical Applications
- Switching mode power supply
- Inductive heating
- Electronic welder
Absolute Maximum Ratings TC=25oC unless otherwise noted
IGBT
Symbol |
Description |
Value |
Unit |
VCES |
Collector-Emitter Voltage |
1200 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
IC |
Collector Current @ TC=25oC
@ TC=65oC
|
262
200
|
A |
ICM |
Pulsed Collector Current tp=1ms |
400 |
A |
PD |
Maximum Power Dissipation @ Tj=150oC |
1315 |
W |
Diode
Symbol |
Description |
Value |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
1200 |
V |
IF |
Diode Continuous Forward Current |
200 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
400 |
A |
Module
Symbol |
Description |
Value |
Unit |
Tjmax |
Maximum Junction Temperature |
150 |
oC |
Tjop |
Operating Junction Temperature |
-40 to +125 |
oC |
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
2500 |
V |
IGBT Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat)
|
Collector to Emitter
Saturation Voltage
|
IC=200A,VGE=15V, Tj=25oC |
|
3.00 |
3.45 |
V
|
IC=200A,VGE=15V, Tj=125oC |
|
3.80 |
|
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=2.0mA,VCE=VGE, Tj=25oC |
4.4 |
5.3 |
6.0 |
V |
ICES |
Collector Cut-Off
Current
|
VCE=VCES,VGE=0V,
Tj=25oC
|
|
|
5.0 |
mA |
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25oC |
|
|
400 |
nA |
RGint |
Internal Gate Resistance |
|
|
1.3 |
|
Ω |
Cies |
Input Capacitance |
VCE=25V,f=1MHz,
VGE=0V
|
|
13.0 |
|
nF |
Cres |
Reverse Transfer
Capacitance
|
|
0.85 |
|
nF |
QG |
Gate Charge |
VGE=- 15…+15V |
|
2.10 |
|
μC |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=200A, RG=4.7Ω,VGE=±15V, Tj=25oC
|
|
87 |
|
ns |
tr |
Rise Time |
|
40 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
451 |
|
ns |
tf |
Fall Time |
|
63 |
|
ns |
Eon |
Turn-On Switching
Loss
|
|
6.8 |
|
mJ |
Eoff |
Turn-Off Switching
Loss
|
|
11.9 |
|
mJ |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=200A, RG=4.7Ω,VGE=±15V, Tj= 125oC
|
|
88 |
|
ns |
tr |
Rise Time |
|
44 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
483 |
|
ns |
tf |
Fall Time |
|
78 |
|
ns |
Eon |
Turn-On Switching
Loss
|
|
11.4 |
|
mJ |
Eoff |
Turn-Off Switching
Loss
|
|
13.5 |
|
mJ |
|
ISC
|
SC Data
|
tP≤10μs,VGE=15V,
Tj=125oC,VCC=900V, VCEM≤1200V
|
|
1300
|
|
A
|
Diode Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
VF |
Diode Forward
Voltage
|
IF=200A,VGE=0V,Tj=25oC |
|
1.95 |
2.40 |
V |
IF=200A,VGE=0V,Tj=125oC |
|
2.00 |
|
Qr |
Recovered Charge |
VR=600V,IF=200A,
-di/dt=4600A/μs,VGE=- 15V Tj=25oC
|
|
13.3 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
236 |
|
A |
Erec |
Reverse Recovery Energy |
|
6.6 |
|
mJ |
Qr |
Recovered Charge |
VR=600V,IF=200A,
-di/dt=4600A/μs,VGE=- 15V Tj=125oC
|
|
23.0 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
269 |
|
A |
Erec |
Reverse Recovery Energy |
|
10.5 |
|
mJ |
Module Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
RthJC |
Junction-to-Case (per IGBT)
Junction-to-Case (per Diode)
|
|
|
0.095
0.202
|
K/W |
|
RthCH
|
Case-to-Heatsink (per IGBT)
Case-to-Heatsink (per Diode)
Case-to-Heatsink (per Module)
|
|
0.135
0.288
0.046
|
|
K/W |
M |
Terminal Connection Torque, Screw M5 Mounting Torque, Screw M6 |
2.5
3.0
|
|
5.0
5.0
|
N.m |
G |
Weight of Module |
|
200 |
|
g |
EN
