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IGBT Module 1200V

IGBT Module 1200V

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GD1200SGT120A3S,IGBT Module,STARPOWER

1200V 1200A

Brand:
STARPOWER
Spu:
GD1200SGT120A3S
  • Introduction
  • Outline
Introduction

Brief introduction

IGBT module, produced by STARPOWER. 1200V 1200A.

Features

  • Low VCE(sat) Trench IGBT technology
  • 10μs short circuit capability
  • VCE(sat) with positive temperature coefficient
  • Low inductance case
  • Fast & soft reverse recovery anti-parallel FWD
  • AlSiC baseplate for high power cycling capability
  • AlN substrate for low thermal resistance

Typical Applications

  • High Power Converters
  • Motor Drivers
  • AC Inverter Drives

Absolute Maximum Ratings TC=25 unless otherwise noted

Symbol

Description

GD1200SGT120A3S

Units

VCES

Collector-Emitter Voltage

1200

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current @ TC=25

@ TC=80

2100

1200

A

ICM

Pulsed Collector Current tp=1ms

2400

A

IF

Diode Continuous Forward Current

1200

A

IFM

Diode Maximum Forward Current tp=1ms

2400

A

PD

Maximum Power Dissipation @ Tj=175

7.61

kW

Tjmax

Maximum Junction Temperature

175

TSTG

Storage Temperature Range

-40 to +125

VISO

Isolation Voltage RMS,f=50Hz,t=1min

2500

V

Mounting Torque

Signal Terminal Screw:M4

1.8 to 2.1

Power Terminal Screw:M8

8.0 to 10

N.m

Mounting Screw:M6

4.25 to 5.75

Electrical Characteristics of IGBT TC=25 unless otherwise noted

Off Characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

V(BR)CES

Collector-Emitter

Breakdown Voltage

Tj=25

1200

V

ICES

Collector Cut-Off

Current

VCE=VCES,VGE=0V, Tj=25

5.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tj=25

400

nA

On Characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

VGE(th)

Gate-Emitter Threshold Voltage

IC=48mA,VCE=VGE, Tj=25

5.0

5.8

6.5

V

VCE(sat)

Collector to Emitter

Saturation Voltage

IC= 1200A,VGE=15V, Tj=25

1.70

2.15

V

IC= 1200A,VGE=15V, Tj=125

2.00

Switching Characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

td(on)

Turn-On Delay Time

VCC=600V,IC=1200A,

RGon=1.8Ω,RGoff=0.62Ω, VGE=±15V,Tj=25

550

ns

tr

Rise Time

230

ns

td(off)

Turn-Off Delay Time

830

ns

tf

Fall Time

160

ns

Eon

Turn-On Switching Loss

/

mJ

Eoff

Turn-Off Switching Loss

/

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC= 1200A,

RGon= 1.8Ω,RGoff=0.62Ω, VGE=±15V,Tj=125

650

ns

tr

Rise Time

240

ns

td(off)

Turn-Off Delay Time

970

ns

tf

Fall Time

190

ns

Eon

Turn-On Switching Loss

246

mJ

Eoff

Turn-Off Switching Loss

189

mJ

Cies

Input Capacitance

VCE=25V,f=1MHz,

VGE=0V

85.5

nF

Coes

Output Capacitance

4.48

nF

Cres

Reverse Transfer

Capacitance

3.87

nF

ISC

SC Data

tP≤10μs,VGE=15 V,

Tj=125℃,

VCC=900V, VCEM≤1200V

4800

A

RGint

Internal Gate

Resistance

1.9

Ω

LCE

Stray Inductance

15

nH

RCC’+EE’

Module Lead

Resistance,

Terminal To Chip

0.10

Electrical Characteristics of Diode TC=25 unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

VF

Diode Forward

Voltage

IF= 1200A

Tj=25

1.65

2.05

V

Tj=125

1.65

Qr

Recovered

Charge

IF= 1200A,

VR=600V,

RGon=0.6Ω,

VGE=-15V

Tj=25

112

μC

Tj=125

224

IRM

Peak Reverse

Recovery Current

Tj=25

850

A

Tj=125

1070

Erec

Reverse Recovery Energy

Tj=25

48.0

mJ

Tj=125

96.0

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case (per IGBT)

19.7

K/kW

RθJC

Junction-to-Case (per Diode)

31.3

K/kW

RθCS

Case-to-Sink (Conductive grease applied)

8

K/kW

Weight

Weight Module

1050

g

Outline

image(be01ae9343).png

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