Brief introduction
IGBT module, produced by STARPOWER. 1200V 1000A.
Features
-
Low VCE(sat) Trench IGBT technology
- Short circuit capability
- VCE(sat) with positive temperature coefficient
-
Maximum junction temperature 175oC
- Low inductance case
-
Fast & soft reverse recovery anti-parallel FWD
- Isolated copper pinfin baseplate using AMB technology
Typical Applications
- Hybrid and electric vehicle
- Inverter for motor drive
- Uninterruptible power supply
Absolute Maximum Ratings TF=25oC unless otherwise noted
IGBT
Symbol |
Description |
Values |
Unit |
VCES |
Collector-Emitter Voltage |
1200 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
ICN |
Implemented Collector Current |
1000 |
A |
IC |
Collector Current @ TF=75oC |
765 |
A |
ICRM |
Repetitive Peak Collector Current tp limited by Tvjop |
2000 |
A |
PD |
Maximum Power Dissipation @ TF=75oC ,Tj=175oC |
1515 |
W |
Diode
Symbol |
Description |
Values |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
1200 |
V |
IFN |
Implemented Collector Current |
1000 |
A |
IF |
Diode Continuous Forward Current |
765 |
A |
IFRM |
Repetitive Peak Forward Current tp limited by Tvjop |
2000 |
A |
IFSM |
Surge Forward Current tp=10ms @ Tvj=25oC @ Tvj=150oC |
4100
3000
|
A |
I2t |
I2t-value,tp=10ms @ Tvj=25oC @ Tvj=150oC |
84000
45000
|
A2s |
Module
Symbol |
Description |
Value |
Unit |
Tjmax |
Maximum Junction Temperature |
175 |
oC |
Tvjop |
Operating Junction Temperature |
-40 to +150 |
oC |
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
4000 |
V |
IGBT Characteristics TF=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat)
|
Collector to Emitter Saturation Voltage
|
IC=1000A,VGE=15V, Tvj=25oC |
|
1.45 |
1.90 |
V
|
IC=1000A,VGE=15V, Tvj=125oC |
|
1.65 |
|
IC=1000A,VGE=15V, Tvj=175oC |
|
1.80 |
|
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=24.0mA,VCE=VGE, Tvj=25oC |
5.5 |
6.3 |
7.0 |
V |
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tvj=25oC |
|
|
1.0 |
mA |
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tvj=25oC |
|
|
400 |
nA |
RGint |
Internal Gate Resistance |
|
|
0.5 |
|
Ω |
Cies |
Input Capacitance |
VCE=25V,f=100kHz, VGE=0V |
|
51.5 |
|
nF |
Cres |
Reverse Transfer Capacitance |
|
0.36 |
|
nF |
QG |
Gate Charge |
VGE=-15…+15V |
|
13.6 |
|
μC |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=900A,
RG=0.51Ω, LS=40nH, VGE=-8V/+15V,
Tvj=25oC
|
|
330 |
|
ns |
tr |
Rise Time |
|
140 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
842 |
|
ns |
tf |
Fall Time |
|
84 |
|
ns |
Eon |
Turn-On Switching Loss |
|
144 |
|
mJ |
Eoff |
Turn-Off Switching Loss |
|
87.8 |
|
mJ |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=900A,
RG=0.51Ω, LS=40nH, VGE=-8V/+15V,
Tvj=125oC
|
|
373 |
|
ns |
tr |
Rise Time |
|
155 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
915 |
|
ns |
tf |
Fall Time |
|
135 |
|
ns |
Eon |
Turn-On Switching Loss |
|
186 |
|
mJ |
Eoff |
Turn-Off Switching Loss |
|
104 |
|
mJ |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=900A,
RG=0.51Ω, LS=40nH, VGE=-8V/+15V,
Tvj=175oC
|
|
390 |
|
ns |
tr |
Rise Time |
|
172 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
950 |
|
ns |
tf |
Fall Time |
|
162 |
|
ns |
Eon |
Turn-On Switching Loss |
|
209 |
|
mJ |
Eoff |
Turn-Off Switching Loss |
|
114 |
|
mJ |
|
ISC
|
SC Data
|
tP≤8μs,VGE=15V,
Tvj=150oC,VCC=800V,
VCEM ≤1200V
|
|
3200
|
|
A
|
|
tP≤6μs,VGE=15V,
Tvj=175oC,VCC=800V,
VCEM ≤1200V
|
|
3000
|
|
A
|
Diode Characteristics TF=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
VF
|
Diode Forward Voltage |
IF=1000A,VGE=0V,Tvj=25oC |
|
1.60 |
2.05 |
V
|
IF=1000A,VGE=0V,Tvj=125oC |
|
1.70 |
|
IF=1000A,VGE=0V,Tvj=175oC |
|
1.60 |
|
Qr |
Recovered Charge |
VR=600V,IF=900A,
-di/dt=4930A/μs,VGE=-8V, LS=40nH,Tvj=25oC
|
|
91.0 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
441 |
|
A |
Erec |
Reverse Recovery Energy |
|
26.3 |
|
mJ |
Qr |
Recovered Charge |
VR=600V,IF=900A,
-di/dt=4440A/μs,VGE=-8V, LS=40nH,
Tvj=125oC
|
|
141 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
493 |
|
A |
Erec |
Reverse Recovery Energy |
|
42.5 |
|
mJ |
Qr |
Recovered Charge |
VR=600V,IF=900A,
-di/dt=4160A/μs,VGE=-8V, LS=40nH,
Tvj=175oC
|
|
174 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
536 |
|
A |
Erec |
Reverse Recovery Energy |
|
52.4 |
|
mJ |
NTC Characteristics TF=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
R25 |
Rated Resistance |
|
|
5.0 |
|
kΩ |
∆R/R |
Deviation of R100 |
TC=100 oC,R100=493.3Ω |
-5 |
|
5 |
% |
P25 |
Power
Dissipation
|
|
|
|
20.0 |
mW |
B25/50 |
B-value |
R2=R25exp[B25/50(1/T2- 1/(298.15K))] |
|
3375 |
|
K |
B25/80 |
B-value |
R2=R25exp[B25/80(1/T2- 1/(298.15K))] |
|
3411 |
|
K |
B25/100 |
B-value |
R2=R25exp[B25/100(1/T2- 1/(298.15K))] |
|
3433 |
|
K |
Module Characteristics TF=25oC unless otherwise noted
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
LCE |
Stray Inductance |
|
20 |
|
nH |
RCC’+EE ’ |
Module Lead Resistance, Terminal to Chip |
|
0.80 |
|
mΩ |
|
RthJF
|
Junction-to-Cooling Fluid (perIGBT) Junction-to-Cooling Fluid (per Diode) △V/△t=10.0dm3/min,TF=75oC |
|
|
0.066 0.092 |
K/W |
M |
Terminal Connection Torque, Screw M6 Mounting Torque, Screw M5 |
3.0 3.0 |
|
6.0 6.0 |
N.m |
G |
Weight of Module |
|
400 |
|
g |
P |
Maximum pressure in cooling circuit |
|
|
3 |
bar |
∆p |
Pressure Drop Cooling Circuit
∆V/∆t=10.0dm3/min;TF=25oC;Cooling Fluid=50% Water/50% Ethylene Glycol
|
|
47 |
|
mbar |
EN
