Brief introduction
Asymmetric IGCT (A-IGCT) modules are high-power, high-reliability semiconductor devices designed for advanced medium- and high-voltage power conversion applications. By combining the high voltage and high current capability of GTO technology with the fast switching performance of IGCT technology, A-IGCT modules provide an efficient solution for demanding industrial power electronic systems.
Featuring advanced wafer manufacturing technology and optimized device structures, asymmetric IGCT modules offer low conduction losses, high turn-off capability, excellent thermal performance, and outstanding operational reliability. They are designed to ensure stable and long-term operation under harsh industrial conditions.
Asymmetric IGCT modules are widely used in high-voltage inverters, industrial rectifier power supplies, mining hoisting systems, railway traction, power quality improvement systems, large motor drives, and renewable energy power conversion systems.
Key Features:
High voltage capability for medium- and high-power applications
High current capability for large-scale power conversion systems
Low conduction losses for improved system efficiency
Fast turn-off performance for enhanced dynamic response
High reliability for continuous industrial operation
High power density design for compact power electronic systems
With excellent electrical performance and reliability, asymmetric IGCT modules provide a core semiconductor solution for next-generation high-efficiency and high-reliability power electronic systems.
YT-ASC40L6500IC
Key Parameters
V DRM |
6500 |
V |
I TGQM |
4000 |
A |
I TSM |
26 |
kA |
V TO |
1.88 |
V |
r T |
0.56 |
mQ |
V DClink |
4000 |
V |
Blocking Data
Symbol |
Conditions |
Min |
Typical |
Max |
|
V DRM |
T VJ=125℃, I D≤I DRM, t p=10ms |
- |
- |
6500 |
V |
I DRM |
T VJ=125℃, V D=V DRM, t p=10ms |
- |
- |
50 |
mA |
dv /dt |
T VJ=125℃, V D=0.67VDRM |
- |
- |
1000 |
V/μs |
V DClinK |
Permanent DC voltage for 100 FIT failure rate of GCT |
- |
- |
4000 |
V |
V RRM |
\ |
- |
- |
17 |
V |
On-State Data
Symbol |
Conditions |
Min |
Typical |
Max |
|
I DC |
T C = 85℃, DC, Double side cooled |
- |
- |
2000 |
A |
|
I TSM
I 2 t
|
T VJ = 125℃, since half wave, 10ms,
V D=V R=0
|
-
-
|
-
-
|
26
338
|
KA
104A2 s
|
V TM |
T VJ = 125℃, I T =4000A |
- |
3.75 |
4.11 |
V |
|
V TO
r T
|
T VJ = 125℃, I T = 1000…4000A |
- |
- |
1.88
0.55
|
V
mΩ
|
Turn-on Data
Symbol |
Test conditions |
Min |
Typical |
Max |
|
diT/dt |
TVJ = 125℃, IT =4000A, VD = 2800V, f=0..500Hz |
- |
- |
5000 |
A/μs |
t don |
TVJ = 125℃, IT = 5000A, VD = 4000V,
di /dt = V D/Li , CCL =20μF, Li = 3μH, LCL = 0.3μH
|
- |
- |
3 |
μs |
t donSF |
- |
- |
7 |
μs |
t r |
- |
- |
1 |
μs |
Eon |
- |
- |
3.3 |
J |
Turn-off Data
Symbol |
Conditions |
Min |
Typical |
Max |
|
ITGQM |
T VJ = 125℃, V DM ≤ V DRM, V D =4000V, L CL = 0.3μH,
C CL = 20μF, R S = 0.4Ω，f=0..300Hz
DFWD = DCL= FYB 1100-60
|
- |
- |
4000 |
A |
tdoff |
T VJ = 125℃, I TGQ = 4000A, V D =4000V,
V DM ≤ V DRM, C CL = 20μF, R S = 0.4Ω,
L i =3μH, L CL = 0.3μH
DFWD = DCL= FYB 1100-60
|
- |
- |
8 |
μs |
tdoffSF |
- |
- |
7 |
μs |
tf |
- |
- |
1 |
μs |
Eoff |
- |
442.5 |
46.3 |
J |
Thermal Data
Symbol |
Test conditions |
Min |
Typical |
Max |
|
|
TVJ
TSTG
|
/ |
0
-40
|
- |
125
60
|
℃
℃
|
|
RthJC
RthCH
|
Double side cooled |
-
-
|
-
-
|
8.5
3
|
K/kW
K/kW
|
Gate Unit
Symbol |
Test conditions |
Min |
Typical |
Max |
|
V GIN RMS |
DC voltage or AC square wave amplitude (15kHz - 100kHz). No galvanic isolation to power circuit. |
28 |
- |
40 |
V |
P GIN MAX |
/ |
- |
- |
130 |
W |
I GIN MIN |
Min. Current needed to power up and gate unit |
2 |
- |
- |
A |
I GIN MAX |
Rectified average current limited by the
gate unit
|
- |
- |
8 |
A |
Optical Control input/output
|
t on(min)
t off(min)
|
/ |
40
40
|
-
-
|
-
-
|
μs
μs
|
|
P on CS
P Off CS
P on SF
P off SF
|
Valid for 1mm plastic optical fiber(POF) |
-15
-
-19
-
|
-
-
-
-
|
-1
-45
-1
-50
|
dBm
dBm
dBm
dBm
|
|
t GLITCH
t retrig
|
Max. pulse width without response
/
|
-
700
|
-
-
|
400
1100
|
ns
ns
|
CS |
Agilent，Type:HFBR-2521 |
SF |
Agilent，Type:HFBR-1521 |
EN
