Y89KFE,Non Symmetric Fast Turn-off Thyristor

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IT(AV)

Mean on-state current

180°half sine wave 50Hz Double side cooled,

TC=55°C

125

4240

A

VDRM

Repetitive peak off-state voltage

tp=10ms

125

1200

2000

V

VRRM

Repetitive peak reverse voltage

1000

1800

V

IDRM IRRM

Repetitive peak current

at VDRM at VRRM

125

250

mA

ITSM

Surge on-state current

10ms half sine wave VR=0.6VRRM

125

46

kA

I2t

I2t for fusing coordination

10580

A2s*103

VTO

Threshold voltage

125

1.14

V

rT

On-state slope resistance

0.10

mΩ

VTM

Peak on-state voltage

ITM=5000A, F=70kN

15μs≤tq≤35µs

25

2.50

V

36μs≤tq≤60µs

1.80

V

61μs≤tq≤80µs

1.60

V

dv/dt

Critical rate of rise of off-state voltage

VDM=0.67VDRM

125

1000

V/μs

di/dt

Critical rate of rise of on-state current (Non-repetitive)

VDM= 67%VDRM ,to4000A

Gate pulse tr ≤0.5μs IGM=1.5A

125

1200

A/μs

Qrr

Recovery charge

ITM=2000A, tp=4000µs, di/dt=-20A/µs, VR=100V

125

2100

µC

tq

Circuit commutated turn-off time

ITM=2000A, tp=4000µs, VR=100V dv/dt=30V/µs,di/dt=-20A/µs

125

25

80

µs

IGT

Gate trigger current

VA=12V, IA=1A

25

40

450

mA

VGT

Gate trigger voltage

0.9

4.5

V

IH

Holding current

20

1000

mA

IL

Latching current

1000

mA

VGD

Non-trigger gate voltage

VDM=67%VDRM

125

0.3

V

Rth(j-c)

Thermal resistance Junction to case

At 1800 sine, double side cooled Clamping force 70 kN

0.007

℃ /W

Rth(c-h)

Thermal resistance case to heat sink

0.002

Fm

Mounting force

63

84

kN

Tvj

Junction temperature

-40

125

℃

Tstg

Stored temperature

-40

140

℃

Wt

Weight

1390

g

Outline

KT84cT