Brief introduction
IGCT Series Products
Our company provides high-performance Integrated Gate-Commutated Thyristor (IGCT) products for high-power and medium-voltage power electronic applications. IGCT combines the advantages of thyristor technology and advanced gate commutation technology, featuring high voltage capability, ultra-high current handling capability, low conduction losses, excellent switching performance, and outstanding reliability.
The IGCT product portfolio includes two major series:
1. Reverse Conducting IGCT (RC-IGCT)
The Reverse Conducting IGCT integrates the IGCT and freewheeling diode into a single semiconductor structure, providing a compact solution with excellent switching performance and simplified system design. It is widely suitable for applications such as medium-voltage drives, converters, and high-power inverter systems.
2. Asymmetric IGCT (A-IGCT)
The Asymmetric IGCT is optimized for high-power switching applications, offering excellent turn-off capability, low conduction losses, and high current density. It is designed for demanding applications requiring maximum power handling capability, including medium-voltage converters, industrial drives, and high-power energy conversion systems.
With advanced semiconductor technology and reliable press-pack packaging, our IGCT products provide efficient and reliable solutions for HVDC systems, renewable energy conversion, industrial motor drives, traction systems, and other high-power applications
Applications
High power converter
Motor drive equipment
Flexible transmission system
Features
With self turn-off capacity
Low operation losses
Be fit for application in series
Key Parameters
V DRM |
4500 |
V |
ITGQM |
5000 |
A |
ITSM |
35 |
kA |
VTO |
1.22 |
V |
rT |
0.28 |
mΩ |
VDClink |
2800 |
V |
Blocking Data
Symbol |
Condition |
Min |
Type |
Max |
Unit |
V DRM |
TVJ= 125℃ , I D ≤I DRM, tp= 10ms |
- |
- |
4500 |
V |
I DRM |
TVJ= 125℃ , VD= V DRM, tp= 10ms |
- |
- |
50 |
mA |
dv/dt |
TVJ= 125℃ , VD=0.67V DRM |
|
|
1000 |
V/ μs |
VDClink |
100FIT失效率所允许的中间直流电压 |
- |
- |
2800 |
V |
VRRM |
/ |
- |
- |
17 |
V |
On-State Data
Symbol |
Condition |
Min |
Type |
Max |
Unit |
IT(RMS) |
TC = 85℃ , Sine half-wave, double-sided cooling |
- |
- |
3000 |
A |
|
ITSM
I2t
|
TVJ =125℃ , Sine half-wave, 10ms, VD= VR=0 |
-
-
|
-
-
|
35
545
|
kA
104A2s
|
VTM |
TVJ =125℃ , IT =5000A |
- |
2.37 |
2.61 |
V |
|
VTO
rT
|
TVJ =125℃ , IT = 1000…5000A
|
-
-
|
-
-
|
1.22
0.28
|
V mΩ |
Turn-on Data
Symbol |
Condition |
Min |
Type |
Max |
Unit |
diT/dt |
TVJ = 125℃ , IT = 5000A, VD = 2800V, f=0..500Hz |
- |
- |
5000 |
A/ μs |
tdon |
|
- |
- |
4 |
μs |
|
t donSF
tr
|
TVJ = 125℃ , IT = 5000A, VD = 2800V, di /dt = VD/L i , C CL =20μF, RS =0.4Ω L i = 3μH, L CL = 0.3μH |
-
-
|
-
-
|
8
1
|
μs
μs
|
E on |
|
- |
- |
1.8 |
J |
Turn-off Data
Symbol |
Condition |
Min |
Type |
Max |
Unit |
|
ITGQM
|
TVJ = 125℃ , V DM ≤V DRM , VD =2800V, L CL = 0.3μH, C CL = 20μF, R S = 0.4Ω , f=0..300Hz
DFWD = DCL=SF8.FYB2000-45
|
-
|
-
|
5000
|
A
|
|
tdoff
tdoffSF
t f
E off
|
TVJ = 125℃ , ITGQ = 5000A, VD =2800V, V DM ≤ V DRM , C CL = 20μF, R S = 0.4Ω ,
L i =4μH, L CL = 0.3μH
DFWD = DCL= SF8.FYB2000-45
|
-
-
-
-
|
-
-
-
28
|
8
10
1
33
|
μs
μs
μs
J
|
EN
