IGBT modul,YMIF1200-45,Yagona kalitlanuvchi IGBT,CRRC

VCES

4500

V

VCE(sat)

(Typ)

2.30

V

IC

(Maks)

1200

A

ICRM)

(Maks)

2400

A

符号
(Simvol)

参数名称
(Parametr)

测试条件
(Sinov Shartlari)

数值
(qiymat)

bir o'lchov
(Birlik)

VCES

集电极 -emissiya kuchlanishi
Kollektor-emitter kuchlanishi

VGE=OV, Tvj=25℃

4500

V

VGES

qatlam -emissiya kuchlanishi
Chiqargichning kuchlanishi

±20

V

IC

to'plam oqimi
Kollektor-emitter kuchlanishi

Tvj=125℃, Tcase=85℃

1200

A

IC(PK)

集电极峰值 elektr oqimi
Pik kollektor oqimi

1ms

2400

A

Pmax

transistorning maksimal yo'qotilishi

Maks. transistor quvvat yo'qotilishi

Tvj=125℃, Tcase=25℃

12.5

kw

I²t

二极管 ²t qiymat
Diod I2t

VR=0V, tp=10ms, Tvj=125℃

530

kA²s

Visol

绝缘电压 (modul )

Izolyatsiya kuchlanishi - modul boshiga

barcha terminalarni qisqa tuting, terminal va asosiy plita o'rtasida voltaj qo'llang
(Asosiy plitaga umumiy terminallar),
AC RMS, 1 daqiqa, 50Hz

10200

V

QPD

mahalliy chiqish zaryadi (modul )
Qisman chiqish - modul boshiga

IEC1287.V1=6900V,V2=5100V,50Hz RMS

10

pC

爬电距离

Yuzaga chiqish masofasi

56mm

izolyatsiya masofasi

Bo'shliq

26mm

o'tkazuvchanlikka chidamlilik indeksi

CTI (Kritik Izlash Indeksi)

600

Termal va Mexanik Ma'lumotlar

符号
(Simvol)

参数名称
(Parametr)

测试条件
(Sinov Shartlari)

eng kichik
(Min)

maksimal
(Maks)

bir o'lchov
(Birlik)

Rh(J-C)IGBT

GBT 结热阻

Termal qarshilik - IGBT

keshning doimiy quvvat yo'qotilishi
Doimiy yo'qotish - bog'lanishdan qutichaga

8

K/kW

Rh(J-C)Diod

diodning bog'lanishdan qutichaga termal qarshiligi
Termal qarshilik - diod

keshning doimiy quvvat yo'qotilishi
Doimiy yo'qotish - bog'lanishdan qutichaga

16

K/kW

Rt(C-H)

接触热阻 (modul )
Issiqlik kuchlanishiga qarshilik
qutichadan issiqlik chiqaruvchiga (modul boshiga)

o'rnatish momenti 5Nm( o'tkazuvchi yog' 1W/m · ℃)
O'rnatish momenti 5Nm
(o'rnatish yog'i bilan 1W/m · ℃)

6

K/kW

Televizor

bog'lanish harorati Junction harorati

IGBT qism (IGBT)

125

℃

diode qismi (Diode)

125

℃

TSTG

saqlash harorati Saqlash temperaturasi diapazoni

-40

125

℃

M

o'rnatish momenti Vint momenti

o'rnatish uchun mahkamlash -M6 O'rnatish -M6

5

Nm

elektr tarmog'ini ulash uchun -M4
Elektr ulanishlari -M4

2

Nm

elektr tarmog'ini ulash uchun -M8
Elektr ulanishlari -M8

10

Nm

Tcase=25℃ aks holda ko'rsatilmagan bo'lsa

符号
(Simvol)

参数名称
(Parametr)

shartlar
(Sinov Shartlari)

eng 小
(Min)

典型
(Typ)

eng 大
(Maks)

单位
(Birlik)

ICES

to'plam to'xtash oqimi
Kollektorni to'xtatish joriy

VGE=OV,VcE=VCES

1

mA

VGE=OV,VcE=VCEs,Tcase=125°C

90

mA

IGES

qaytish oqimining oqimi
Darvoza oqimi

VGE=±20V,VcE=0V

1

μA

VGE (oʻn)

qatlam -emissiya qutisi chegarasi kuchlanishi
Darvoza threshold kuchlanishi

Ic=120mA,VGE=VCE

5.0

6.0

7.0

V

VCE(sa)

集电极 -emissiya qutisi to'yingan kuchlanishi
Kollektor-emitter to'yinganligi
voltaj

VGE=15V,Ic=1200A

2.3

2.8

V

VGE=15V,Ic=1200A,Tvj=125°C

3.0

3.5

V

IF

diodning to'g'ri oqim kuchi
Diodning oldinga oqimi

DC

1200

A

IFRM

diode ning to'g'ri yo'nalishdagi takroriy pik oqimi
Diodning maksimal oldingi oqimi

tp=1ms

2400

A

vF(1

diode ning to'g'ri yo'nalishdagi kuchlanishi
Diodning oldinga kuchlanishi

/F=1200A

2.4

2.9

V

/F=1200A,Tvj=125°C

2.7

3.2

V

Cies

kirish quvvati
Kirish sig'imi

VcE=25V,VGE=OV,f=1MHz

135

nF

Q₉

qaytish zaryadi
Darvoza zaryadi

±15V

11.9

μC

Cres

teskari uzatish kondensatori
Teskari o'tkazish sig'imi

VcE=25V,VGE=0V,f =1MHz

3.4

nF

LM

modul induktivligi
Modulning induktansiyasi

10

nH

RINT

ichki qarshilik
Ichki tranzistor qarshiligi

90

μΩ

ISC

qisqa tutashuv oqimi
Qisqa tutashuv oqimi,Isc

Tvj=125°C,Vcc=3400V,
VGE≤15V,tp≤10μs,
VCE(max)=VCEs-L(2×di/dt,

IEC 60747-9

5300

A

td(of)

o'chirish kechikishi
O'chirish kechikish vaqti

Ic=1200A
VcE=2800V
Cge=220nF

L ～ 180nH
VGE=± 15V
RG(ON)=1.5Ω
RG(OFF)=2.7Ω

2700

ns

tf

tushish vaqti
Pasayish vaqti

700

ns

Eof

关断损耗
O'chirish energiya yo'qotilishi

5800

mJ

tdon)

开通延迟时间
O'chirish kechikish vaqti

720

ns

t

ko'tarilish vaqti
O'sish vaqti

270

ns

EON

ochiq yo'l yo'qotish
O'chirish energiya yo'qotilishi

3200

mJ

Qm

diode ning teskari tiklanish zaryadi
Diodning teskari tiklanish zaryadi

/F=1200A
VcE = 2800V
dip/dt =5000A/us

1200

μC

Ман

diode ning teskari tiklanish oqimi
Diodning teskari tiklanish joriy

1350

A

Erec

diode ning teskari tiklanish yo'qotish
Diodning teskari tiklanish energiyasi

1750

mJ

td(of)

o'chirish kechikishi
O'chirish kechikish vaqti

Ic=1200A
VcE = 2800V
Cge=220nF
L ～ 180nH
VGE=± 15V
RG(ON)=1.5Ω
RGOFF)=2.7Ω

2650

ns

tf

tushish vaqti
Pasayish vaqti

720

ns

Eof

关断损耗
O'chirish energiya yo'qotilishi

6250

mJ

tdon)

开通延迟时间
O'chirish kechikish vaqti

740

ns

t

ko'tarilish vaqti
O'sish vaqti

290

ns

EON

ochiq yo'l yo'qotish
O'chirish energiya yo'qotilishi

4560

mJ

Q

diode ning teskari tiklanish zaryadi
Diodning teskari tiklanish zaryadi

/F=1200A
VcE=2800V
dip/dt =5000A/us

1980

μC

Ман

diode ning teskari tiklanish oqimi
Diodning teskari tiklanish joriy

1720

A

Erec

diode ning teskari tiklanish yo'qotish
Diodning teskari tiklanish energiyasi

3250

mJ