MFC70,Welding Thyristor rectifier module,Air cooling

VDSM,VRSM

VDRM,VRRM

Type & Outline

900V

800V

MFC70-08-224H3

1100V

1000V

MFC70-10-224H3

1300V

1200V

MFC70-12-224H3

1500V

1400V

MFC70-14-224H3

1700V

1600V

MFC70-16-224H3

1900V

1800V

MFC70-18-224H3

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IT(AV)

Mean on-state current

180°half sine wave 50Hz

Single side cooled, Tc =85℃

125

70

A

IT(RMS)

RMS on-state current

125

110

A

IDRM IRRM

Repetitive peak current

at VDRM at VRRM

125

15

mA

ITSM

Surge on-state current

10ms half sine wave VR=60%VRRM

125

1.8

kA

I2t

I2t for fusing coordination

16.2

A²s* 10³

VTO

Threshold voltage

125

0.75

V

rT

On-state slope resistance

3.64

mΩ

VTM

Peak on-state voltage

ITM=210A

25

1.80

V

dv/dt

Critical rate of rise of off-state voltage

VDM=67%VDRM

125

1000

V/μs

di/dt

Critical rate of rise of on-state current

Gate source 1.5A

tr ≤0.5μs Repetitive

125

200

A/μs

IGT

Gate trigger current

VA= 12V, IA= 1A

25

30

200

mA

VGT

Gate trigger voltage

0.6

2.5

V

IH

Holding current

10

250

mA

VGD

Non-trigger gate voltage

VDM=67%VDRM

125

0.2

V

Rth(j-c)

Thermal resistance Junction to case

Single side cooled per chip

0.35

℃ /W

Rth(c-h)

Thermal resistance case to heatsink

Single side cooled per chip

0.15

℃ /W

Viso

Isolation voltage

50Hz,R.M.S,t= 1min,Iiso:1mA(MAX)

3000

V

Fm

Thermal connection torque(M5)

2.5

4.0

N·m

Mounting torque(M6)

4.0

6.0

N·m

Tvj

Junction temperature

-40

125

℃

Tstg

Stored temperature

-40

125

℃

Wt

Weight

100

g

Outline

224H3