Brief introduction
IGBT module,produced by STARPOWER. 1700V 75A.
Features
Typical Applications
Absolute Maximum Ratings TF=25oC unless otherwise noted
IGBT-inverter
Symbol |
Description |
Values |
Unit |
VCES |
Collector-Emitter Voltage |
1700 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
IC |
Collector Current @ TC=25oC @ TC=100oC |
139 75 |
A |
ICM |
Pulsed Collector Current tp=1ms |
150 |
A |
PD |
Maximum Power Dissipation @ Tvj=175oC |
559 |
W |
Diode-inverter
Symbol |
Description |
Values |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
1700 |
V |
IF |
Diode Continuous Forward Current |
75 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
150 |
A |
Diode-rectifier
Symbol |
Description |
Value |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
2000 |
V |
IO |
Average Output Current 50Hz/60Hz,sine wave |
75 |
A |
IFSM |
Surge Forward Current tp=10ms @ Tvj=25oC @ Tvj=150oC |
1440 1206 |
A |
I2t |
I2t-value,tp=10ms @ Tvj=25oC @ Tvj=150oC |
10368 7272 |
A2s |
Module
Symbol |
Description |
Value |
Unit |
Tvjmax |
Maximum Junction Temperature(inverter) Maximum Junction Temperature (rectifier) |
175 150 |
oC |
Tvjop |
Operating Junction Temperature |
-40 to +150 |
oC |
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
4000 |
V |
IGBT-inverter Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=75A,VGE=15V, Tvj=25oC |
|
1.85 |
2.20 |
V |
IC=75A,VGE=15V, Tvj=125oC |
|
2.25 |
|
|||
IC=75A,VGE=15V, Tvj=150oC |
|
2.35 |
|
|||
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=3.0mA,VCE=VGE, Tvj=25oC |
5.6 |
6.2 |
6.8 |
V |
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tvj=25oC |
|
|
5.0 |
mA |
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tvj=25oC |
|
|
400 |
nA |
RGint |
Internal Gate Resistance |
|
|
8.5 |
|
Ω |
Cies |
Input Capacitance |
VCE=25V,f=1MHz, VGE=0V |
|
9.03 |
|
nF |
Cres |
Reverse Transfer Capacitance |
|
0.22 |
|
nF |
|
QG |
Gate Charge |
VGE=-15 …+15V |
|
0.71 |
|
μC |
td(on) |
Turn-On Delay Time |
VCC=900V,IC=75A, RG=6.8Ω,VGE=±15V, LS=46nH,Tvj=25oC |
|
236 |
|
ns |
tr |
Rise Time |
|
42 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
356 |
|
ns |
|
tf |
Fall Time |
|
363 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
17.3 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
11.7 |
|
mJ |
|
td(on) |
Turn-On Delay Time |
VCC=900V,IC=75A, RG=6.8Ω,VGE=±15V, LS=46nH,Tvj=125oC |
|
252 |
|
ns |
tr |
Rise Time |
|
48 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
420 |
|
ns |
|
tf |
Fall Time |
|
485 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
27.1 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
16.6 |
|
mJ |
|
td(on) |
Turn-On Delay Time |
VCC=900V,IC=75A, RG=6.8Ω,VGE=±15V, LS=46nH,Tvj=150oC |
|
275 |
|
ns |
tr |
Rise Time |
|
50 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
432 |
|
ns |
|
tf |
Fall Time |
|
524 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
27.9 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
17.7 |
|
mJ |
|
|
ISC |
SC Data |
tP≤10μs,VGE=15V, Tvj=150oC,VCC=1000V , VCEM≤1700V |
|
300 |
|
A |
Diode-inverter Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VF |
Diode Forward Voltage |
IF=75A,VGE=0V,Tvj=25oC |
|
1.80 |
2.25 |
V |
IF=75A,VGE=0V,Tvj=125oC |
|
1.90 |
|
|||
IF=75A,VGE=0V,Tvj=150oC |
|
1.95 |
|
|||
Qr |
Recovered Charge |
VR=900V,IF=75A, -di/dt=1290A/μs,VGE=-15V LS=46nH,Tvj=25oC |
|
10.3 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
84 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
7.44 |
|
mJ |
|
Qr |
Recovered Charge |
VR=900V,IF=75A, -di/dt=1100A/μs,VGE=-15V LS=46nH,Tvj=125oC |
|
20.5 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
87 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
16.1 |
|
mJ |
|
Qr |
Recovered Charge |
VR=900V,IF=75A, -di/dt=1060A/μs,VGE=-15V LS=46nH,Tvj=150oC |
|
22.5 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
97 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
19.2 |
|
mJ |
Diode-rectifier Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
VF |
Diode Forward Voltage |
IC=75A,Tvj=150oC |
|
0.95 |
|
V |
IR |
Reverse Current |
Tvj=150oC,VR=2000V |
|
|
3.0 |
mA |
NTC Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
R25 |
Rated Resistance |
|
|
5.0 |
|
kΩ |
∆R/R |
Deviation of R100 |
TC=100 oC,R100=493.3Ω |
-5 |
|
5 |
% |
P25 |
Power Dissipation |
|
|
|
20.0 |
mW |
B25/50 |
B-value |
R2=R25exp[B25/50(1/T2- 1/(298.15K))] |
|
3375 |
|
K |
B25/80 |
B-value |
R2=R25exp[B25/80(1/T2- 1/(298.15K))] |
|
3411 |
|
K |
B25/100 |
B-value |
R2=R25exp[B25/100(1/T2- 1/(298.15K))] |
|
3433 |
|
K |
Module Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
RthJC |
Junction-to-Case (perIGBT-inverter) Junction-to-Case (per Diode-inverter) Junction-to-Case (per Diode-rectifier) |
|
|
0.268 0.481 0.289 |
K/W |
|
RthCH |
Case-to-Heatsink (perIGBT-inverter) Case-to-Heatsink (per Diode-inverter) Case-to-Heatsink (per Diode-rectifier) Case-to-Heatsink (per Module) |
|
0.106 0.190 0.114 0.009 |
|
K/W |
M |
Mounting Torque, Screw:M5 |
3.0 |
|
6.0 |
N.m |
G |
Weight of Module |
|
300 |
|
g |
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