GD3600SGX170C4S,IGBT Module,High current igbt module,STARPOWER

Symbol

Description

Value

Unit

VCES

Collector-Emitter Voltage

1700

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current @ TC=100oC

3600

A

ICM

Pulsed Collector Current tp=1ms

7200

A

PD

Maximum Power Dissipation @ Tj=175oC

21.4

kW

Symbol

Description

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

1700

V

IF

Diode Continuous Forward Current

3600

A

IFM

Diode Maximum Forward Current tp=1ms

7200

A

IFSM

Surge Forward Current VR=0V,tp=10ms, @Tj=25oC @Tj=150oC

23.22 19.95

kA

I2t

I2t-value,VR=0V,tp=10ms,Tj=25oC I2t-value,VR=0V,tp=10ms,Tj=150oC

2695

1990

kA2s

Symbol

Description

Value

Unit

Tjmax

Maximum Junction Temperature

175

oC

Tjop

Operating Junction Temperature

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage RMS,f=50Hz,t=1min

4000

V

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter Saturation Voltage

IC=3600A,VGE=15V, Tj=25oC

1.85

2.30

V

IC=3600A,VGE=15V, Tj=125oC

2.25

IC=3600A,VGE=15V, Tj=150oC

2.30

VGE(th)

Gate-Emitter Threshold Voltage

IC=144.0mA,VCE=VGE, Tj=25oC

5.6

6.2

6.8

V

ICES

Collector Cut-Off Current

VCE=VCES,VGE=0V, Tj=25oC

5.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tj=25oC

400

nA

RGint

Internal Gate Resistance

0.7

Ω

Cies

Input Capacitance

VCE=25V,f=100kHz, VGE=0V

427

nF

Cres

Reverse Transfer Capacitance

10.7

nF

QG

Gate Charge

VGE=-15…+15V

35.3

μC

td(on)

Turn-On Delay Time

VCC=900V,IC=3600A, RGon=1.2Ω,RGoff=0.9Ω, VGE=-9V/+15V,

LS=65nH,Tj=25oC

1161

ns

tr

Rise Time

413

ns

td(off)

Turn-Off Delay Time

4761

ns

tf

Fall Time

430

ns

Eon

Turn-On Switching Loss

1734

mJ

Eoff

Turn-Off Switching Loss

2580

mJ

td(on)

Turn-On Delay Time

VCC=900V,IC=3600A, RGon=1.2Ω,RGoff=0.9Ω, VGE=-9V/+15V,

LS=65nH,Tj=125oC

1370

ns

tr

Rise Time

547

ns

td(off)

Turn-Off Delay Time

5303

ns

tf

Fall Time

457

ns

Eon

Turn-On Switching Loss

2679

mJ

Eoff

Turn-Off Switching Loss

2881

mJ

td(on)

Turn-On Delay Time

VCC=900V,IC=3600A, RGon=1.2Ω,RGoff=0.9Ω, VGE=-9V/+15V,

LS=65nH,Tj=150oC

1413

ns

tr

Rise Time

585

ns

td(off)

Turn-Off Delay Time

5490

ns

tf

Fall Time

473

ns

Eon

Turn-On Switching Loss

2863

mJ

Eoff

Turn-Off Switching Loss

2960

mJ

ISC

SC Data

tP≤10μs,VGE=15V,

Tj=150oC,VCC=1000V, VCEM≤1700V

14.0

kA

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VF

Diode Forward Voltage

IF=3600A,VGE=0V,Tj=25oC

1.80

2.25

V

IF=3600A,VGE=0V,Tj=125oC

1.90

IF=3600A,VGE=0V,Tj=150oC

1.95

Qr

Recovered Charge

VR=900V,IF=3600A,

-di/dt=7000A/μs,VGE=-9V, LS=65nH,Tj=25oC

207

μC

IRM

Peak Reverse

Recovery Current

1030

A

Erec

Reverse Recovery Energy

199

mJ

Qr

Recovered Charge

VR=900V,IF=3600A,

-di/dt=5700/μs,VGE=-9V, LS=65nH,Tj=125oC

288

μC

IRM

Peak Reverse

Recovery Current

1020

A

Erec

Reverse Recovery Energy

339

mJ

Qr

Recovered Charge

VR=900V,IF=3600A,

-di/dt=5200A/μs,VGE=-9V, LS=65nH,Tj=150oC

391

μC

IRM

Peak Reverse

Recovery Current

996

A

Erec

Reverse Recovery Energy

341

mJ

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

6.0

nH

RCC’+EE’

Module Lead Resistance, Terminal to Chip

0.085

mΩ

RthJC

Junction-to-Case (perIGBT) Junction-to-Case (per Diode)

7.0 12.8

K/kW

RthCH

Case-to-Heatsink (perIGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module)

6.2 11.3 4.0

K/kW

dCreep

Terminal-to-Heatsink Terminal-to-Terminal

32.2 32.2

mm

dClear

Terminal-to-Heatsink Terminal-to-Terminal

19.1 19.1

mm

M

Terminal Connection Torque, Screw M4 Terminal Connection Torque, Screw M8 Mounting Torque, Screw M6

1.8 8.0 4.25

2.1

10

5.75

N.m

G

Weight of Module

2060

g