Brief introduction
IGBT module,produced by STARPOWER. 1700V 150A.
Features
- Low VCE(sat) Trench IGBT technology
- 10μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175oC
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology
Typical Applications
- Inverter for motor drive
- AC and DC servo drive amplifier
- Uninterruptible power supply
Absolute Maximum Ratings TF=25oC unless otherwise noted
IGBT-inverter
Symbol |
Description |
Values |
Unit |
VCES |
Collector-Emitter Voltage |
1700 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
IC |
Collector Current @ TC=25oC @ TC=95oC |
232
150
|
A |
ICM |
Pulsed Collector Current tp=1ms |
300 |
A |
PD |
Maximum Power Dissipation @ Tj=175oC |
828 |
W |
Diode-inverter
Symbol |
Description |
Values |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
1700 |
V |
IF |
Diode Continuous Forward Current |
150 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
300 |
A |
Diode-rectifier
Symbol |
Description |
Value |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
1800 |
V |
IO |
Average Output Current 50Hz/60Hz,sine wave |
150 |
A |
IFSM |
Surge Forward Current tp=10ms @ Tj=25oC @ Tj=150oC |
1600
1400
|
A |
I2t |
I2t-value,tp=10ms @ Tj=25oC @ Tj=150oC |
13000
9800
|
A2s |
Module
Symbol |
Description |
Value |
Unit |
Tjmax |
Maximum Junction Temperature(inverter) Maximum Junction Temperature (rectifier) |
175
150
|
oC |
Tjop |
Operating Junction Temperature |
-40 to +150 |
oC |
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
4000 |
V |
IGBT-inverter Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat)
|
Collector to Emitter Saturation Voltage
|
IC=150A,VGE=15V, Tj=25oC |
|
1.85 |
2.20 |
V
|
IC=150A,VGE=15V, Tj=125oC |
|
2.25 |
|
IC=150A,VGE=15V, Tj=150oC |
|
2.35 |
|
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=6.00mA,VCE=VGE, Tj=25oC |
5.6 |
6.2 |
6.8 |
V |
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25oC |
|
|
5.0 |
mA |
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25oC |
|
|
400 |
nA |
RGint |
Internal Gate Resistance |
|
|
4.3 |
|
Ω |
Cies |
Input Capacitance |
VCE=25V,f=1MHz, VGE=0V |
|
18.1 |
|
nF |
Cres |
Reverse Transfer Capacitance |
|
0.44 |
|
nF |
QG |
Gate Charge |
VGE=-15 …+15V |
|
1.41 |
|
μC |
td(on) |
Turn-On Delay Time |
VCC=900V,IC=150A, RG=4.7Ω,VGE=±15V, LS=46nH,Tj=25oC
|
|
292 |
|
ns |
tr |
Rise Time |
|
55 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
458 |
|
ns |
tf |
Fall Time |
|
392 |
|
ns |
Eon |
Turn-On Switching Loss |
|
33.6 |
|
mJ |
Eoff |
Turn-Off Switching Loss |
|
26.3 |
|
mJ |
td(on) |
Turn-On Delay Time |
VCC=900V,IC=150A, RG=4.7Ω,VGE=±15V, LS=46nH,Tj=125oC
|
|
342 |
|
ns |
tr |
Rise Time |
|
67 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
520 |
|
ns |
tf |
Fall Time |
|
568 |
|
ns |
Eon |
Turn-On Switching Loss |
|
50.5 |
|
mJ |
Eoff |
Turn-Off Switching Loss |
|
35.7 |
|
mJ |
td(on) |
Turn-On Delay Time |
VCC=900V,IC=150A, RG=4.7Ω,VGE=±15V, LS=46nH,Tj=150oC
|
|
352 |
|
ns |
tr |
Rise Time |
|
68 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
535 |
|
ns |
tf |
Fall Time |
|
589 |
|
ns |
Eon |
Turn-On Switching Loss |
|
53.3 |
|
mJ |
Eoff |
Turn-Off Switching Loss |
|
36.3 |
|
mJ |
|
ISC
|
SC Data
|
tP≤10μs,VGE=15V,
Tj=150oC,VCC=1000V, VCEM≤1700V
|
|
600
|
|
A
|
Diode-inverter Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VF
|
Diode Forward Voltage |
IF=150A,VGE=0V,Tj=25oC |
|
1.80 |
2.25 |
V
|
IF=150A,VGE=0V,Tj=125oC |
|
1.90 |
|
IF=150A,VGE=0V,Tj=150oC |
|
1.95 |
|
Qr |
Recovered Charge |
VR=900V,IF=150A,
-di/dt=2340A/μs,VGE=-15V LS=46nH,Tj=25oC
|
|
21.3 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
183 |
|
A |
Erec |
Reverse Recovery Energy |
|
20.4 |
|
mJ |
Qr |
Recovered Charge |
VR=900V,IF=150A,
-di/dt=2000A/μs,VGE=-15V LS=46nH,Tj=125oC
|
|
36.2 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
196 |
|
A |
Erec |
Reverse Recovery Energy |
|
33.9 |
|
mJ |
Qr |
Recovered Charge |
VR=900V,IF=150A,
-di/dt=1830A/μs,VGE=-15V LS=46nH,Tj=150oC
|
|
41.2 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
199 |
|
A |
Erec |
Reverse Recovery Energy |
|
36.3 |
|
mJ |
Diode-rectifier Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
VF |
Diode Forward Voltage |
IC=150A,Tj=150oC |
|
0.90 |
|
V |
IR |
Reverse Current |
Tj=150oC,VR=1800V |
|
|
3.0 |
mA |
NTC Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
R25 |
Rated Resistance |
|
|
5.0 |
|
kΩ |
∆R/R |
Deviation of R100 |
TC=100 oC,R100=493.3Ω |
-5 |
|
5 |
% |
P25 |
Power
Dissipation
|
|
|
|
20.0 |
mW |
B25/50 |
B-value |
R2=R25exp[B25/50(1/T2- 1/(298.15K))] |
|
3375 |
|
K |
B25/80 |
B-value |
R2=R25exp[B25/80(1/T2- 1/(298.15K))] |
|
3411 |
|
K |
B25/100 |
B-value |
R2=R25exp[B25/100(1/T2- 1/(298.15K))] |
|
3433 |
|
K |
Module Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
RthJC |
Junction-to-Case (perIGBT-inverter) Junction-to-Case (per Diode-inverter) Junction-to-Case (per Diode-rectifier) |
|
|
0.181 0.300 0.289 |
K/W |
|
RthCH
|
Case-to-Heatsink (perIGBT-inverter) Case-to-Heatsink (per Diode-inverter) Case-to-Heatsink (per Diode-rectifier) Case-to-Heatsink (per Module) |
|
0.092 0.152 0.146 0.009 |
|
K/W
|
M |
Mounting Torque, Screw:M5 |
3.0 |
|
6.0 |
N.m |
G |
Weight of Module |
|
300 |
|
g |
EN
