IGBT Module,1700V 100A
Brief introduction
IGBT module,produced by STARPOWER. 1700V 100A.
Features
Typical Applications
Absolute Maximum Ratings TF=25oC unless otherwise noted
IGBT
| Symbol | Description | Value | Unit | 
| VCES | Collector-Emitter Voltage | 1700 | V | 
| VGES | Gate-Emitter Voltage | ±20 | V | 
| IC | Collector Current @ TC=25oC @ TC=100oC | 196 100 | A | 
| ICM | Pulsed Collector Current tp=1ms | 200 | A | 
| PD | Maximum Power Dissipation @ Tvj=175oC | 815 | W | 
Diode
| Symbol | Description | Value | Unit | 
| VRRM | Repetitive Peak Reverse Voltage | 1700 | V | 
| IF | Diode Continuous Forward Current | 100 | A | 
| IFM | Diode Maximum Forward Current tp=1ms | 200 | A | 
Module
| Symbol | Description | Value | Unit | 
| Tvjmax | Maximum Junction Temperature | 175 | oC | 
| Tvjop | Operating Junction Temperature | -40 to +150 | oC | 
| TSTG | Storage Temperature Range | -40 to +125 | oC | 
| VISO | Isolation Voltage RMS,f=50Hz,t=1min | 4000 | V | 
IGBT Characteristics TC=25oC unless otherwise noted
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit | 
| 
 
 VCE(sat) | 
 
 Collector to Emitter Saturation Voltage | IC=100A,VGE=15V, Tvj=25oC | 
 | 1.85 | 2.20 | 
 
 V | 
| IC=100A,VGE=15V, Tvj=125oC | 
 | 2.25 | 
 | |||
| IC=100A,VGE=15V, Tvj=150oC | 
 | 2.35 | 
 | |||
| VGE(th) | Gate-Emitter Threshold Voltage | IC=4.00mA,VCE=VGE, Tvj=25oC | 5.6 | 6.2 | 6.8 | V | 
| ICES | Collector Cut-Off Current | VCE=VCES,VGE=0V, Tvj=25oC | 
 | 
 | 5.0 | mA | 
| IGES | Gate-Emitter Leakage Current | VGE=VGES,VCE=0V, Tvj=25oC | 
 | 
 | 400 | nA | 
| RGint | Internal Gate Resistance | 
 | 
 | 7.5 | 
 | Ω | 
| Cies | Input Capacitance | VCE=25V,f=1MHz, VGE=0V | 
 | 12.0 | 
 | nF | 
| Cres | Reverse Transfer Capacitance | 
 | 0.29 | 
 | nF | |
| QG | Gate Charge | VGE=-15 …+15V | 
 | 0.94 | 
 | μC | 
| td(on) | Turn-On Delay Time | 
 
 VCC=900V,IC=100A, RG=1.0Ω,VGE=±15V, Ls=52nH,Tvj=25oC | 
 | 196 | 
 | ns | 
| tr | Rise Time | 
 | 44 | 
 | ns | |
| td(off) | Turn-Off Delay Time | 
 | 298 | 
 | ns | |
| tf | Fall Time | 
 | 367 | 
 | ns | |
| Eon | Turn-On Switching Loss | 
 | 26.4 | 
 | mJ | |
| Eoff | Turn-Off Switching Loss | 
 | 14.7 | 
 | mJ | |
| td(on) | Turn-On Delay Time | 
 
 VCC=900V,IC=100A, RG=1.0Ω,VGE=±15V, Ls=52nH,Tvj=125oC | 
 | 217 | 
 | ns | 
| tr | Rise Time | 
 | 53 | 
 | ns | |
| td(off) | Turn-Off Delay Time | 
 | 361 | 
 | ns | |
| tf | Fall Time | 
 | 516 | 
 | ns | |
| Eon | Turn-On Switching Loss | 
 | 36.0 | 
 | mJ | |
| Eoff | Turn-Off Switching Loss | 
 | 21.0 | 
 | mJ | |
| td(on) | Turn-On Delay Time | 
 
 VCC=900V,IC=100A, RG=1.0Ω,VGE=±15V, Ls=52nH,Tvj=150oC | 
 | 223 | 
 | ns | 
| tr | Rise Time | 
 | 56 | 
 | ns | |
| td(off) | Turn-Off Delay Time | 
 | 374 | 
 | ns | |
| tf | Fall Time | 
 | 551 | 
 | ns | |
| Eon | Turn-On Switching Loss | 
 | 39.1 | 
 | mJ | |
| Eoff | Turn-Off Switching Loss | 
 | 22.4 | 
 | mJ | |
| 
 ISC | 
 SC Data | tP≤10μs,VGE=15V, Tvj=150oC,VCC=1000V, VCEM≤1700V | 
 | 
 400 | 
 | 
 A | 
Diode Characteristics TC=25oC unless otherwise noted
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit | 
| 
 VF | Diode Forward Voltage | IF=100A,VGE=0V,Tvj=25oC | 
 | 1.80 | 2.25 | 
 V | 
| IF=100A,VGE=0V,Tvj=125oC | 
 | 1.95 | 
 | |||
| IF=100A,VGE=0V,Tvj=150oC | 
 | 1.90 | 
 | |||
| Qr | Recovered Charge | 
 VR=900V,IF=100A, -di/dt=1332A/μs,VGE=-15V Ls=52nH,Tvj=25oC | 
 | 26.8 | 
 | μC | 
| IRM | Peak Reverse Recovery Current | 
 | 78 | 
 | A | |
| Erec | Reverse Recovery Energy | 
 | 14.4 | 
 | mJ | |
| Qr | Recovered Charge | 
 VR=900V,IF=100A, -di/dt=1091A/μs,VGE=-15V Ls=52nH,Tvj=125oC | 
 | 42.3 | 
 | μC | 
| IRM | Peak Reverse Recovery Current | 
 | 86 | 
 | A | |
| Erec | Reverse Recovery Energy | 
 | 23.7 | 
 | mJ | |
| Qr | Recovered Charge | 
 VR=900V,IF=100A, -di/dt=1060A/μs,VGE=-15V Ls=52nH,Tvj=150oC | 
 | 48.2 | 
 | μC | 
| IRM | Peak Reverse Recovery Current | 
 | 89 | 
 | A | |
| Erec | Reverse Recovery Energy | 
 | 27.4 | 
 | mJ | 
Module Characteristics TC=25oC unless otherwise noted
| Symbol | Parameter | Min. | Typ. | Max. | Unit | 
| LCE | Stray Inductance | 
 | 20 | 
 | nH | 
| RCC’+EE’ | Module Lead Resistance, Terminal to Chip | 
 | 1.10 | 
 | mΩ | 
| RthJC | Junction-to-Case (perIGBT) Junction-to-Case (per Diode) | 
 | 
 | 0.184 0.274 | K/W | 
| 
 RthCH | Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) | 
 | 0.060 0.090 0.009 | 
 | K/W | 
| M | Terminal Connection Torque, Screw M6 Mounting Torque, Screw M5 | 3.0 3.0 | 
 | 6.0 6.0 | N.m | 
| G | Weight of Module | 
 | 350 | 
 | g | 

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