GD1000HFX170P2,IGBT Module,Half Bridge IGBT,STARPOWER

Symbol

Parameter

Test Conditions

Value

Unit

VCES

Collector-emitter voltage

VGE = 0V, TC= 25 °C

1700

V

VGES

Gate-emitter voltage

TC= 25 °C

± 20

V

IC

Collector-emitter current

TC = 65 °C

1400

A

IC(PK)

集电极峰值电流

Peak collector current

tP=1ms

2800

A

Pmax

Max. transistor power dissipation

Tvj = 150°C, TC = 25 °C

6.25

kW

I2t

Diode I2t

VR =0V, tP = 10ms, Tvj = 150 °C

145

kA2s

Visol

Isolation voltage - per module

Commoned terminals to base plate), AC RMS,1 min, 50Hz, TC= 25 °C

4000

V

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector cut-off current

VGE = 0V,VCE = VCES

1

mA

VGE = 0V, VCE = VCES, TC=125 °C

20

mA

VGE = 0V, VCE = VCES, TC=150 °C

30

mA

IGES

Gate leakage current

VGE = ±20V, VCE = 0V

0.5

μA

VGE (TH)

Gate threshold voltage

IC = 30mA, VGE = VCE

5.00

6.00

7.00

V

VCE (sat)(*1)

Collector-emitter saturation voltage

VGE =15V, IC = 1400A

2.00

2.40

V

VGE =15V, IC = 1400A, Tvj = 125 °C

2.45

2.70

V

VGE =15V, IC = 1400A, Tvj = 150 °C

2.55

2.80

V

IF

Diode forward current

DC

1400

A

IFRM

Diode peak forward current

tP = 1ms

2800

A

VF(*1)

Diode forward voltage

IF = 1400A, VGE = 0

1.80

2.20

V

IF = 1400A, VGE = 0, Tvj = 125 °C

1.95

2.30

V

IF = 1400A, VGE = 0, Tvj = 150 °C

2.00

2.40

V

ISC

Short circuit current

Tvj = 150°C, VCC = 1000V, VGE ≤15V, tp ≤10μs,

VCE(max) = VCES – L(*2) ×di/dt, IEC 6074-9

5400

A

Cies

输入电容

Input capacitance

VCE = 25V, VGE = 0V, f = 100kHz

113

nF

Qg

Gate charge

±15V

11.7

μC

Cres

Reverse transfer capacitance

VCE = 25V, VGE = 0V, f = 100kHz

3.1

nF

LM

Module inductance

10

nH

RINT

Internal transistor resistance

0.2

mΩ

td(off)

Turn-off delay time

IC =1400A,

VCE = 900V,

VGE = ±15V, RG(OFF) = 1.8Ω , LS = 20nH,

dv/dt =3000V/us (Tvj= 150 °C).

Tvj= 25 °C

1520

ns

Tvj= 125 °C

1580

Tvj= 150 °C

1600

tf

下降时间 Fall time

Tvj= 25 °C

460

ns

Tvj= 125 °C

610

Tvj= 150 °C

650

EOFF

Turn-off energy loss

Tvj= 25 °C

460

mJ

Tvj= 125 °C

540

Tvj= 150 °C

560

td(on)

Turn-on delay time

IC =1400A,

VCE = 900V,

VGE = ±15V, RG(ON) = 1.2Ω , LS = 20nH,

di/dt = 10000A/us (Tvj= 150 °C).

Tvj= 25 °C

400

ns

Tvj= 125 °C

370

Tvj= 150 °C

360

tr

Rise time

Tvj= 25 °C

112

ns

Tvj= 125 °C

120

Tvj= 150 °C

128

EON

Turn-on energy loss

Tvj= 25 °C

480

mJ

Tvj= 125 °C

580

Tvj= 150 °C

630

Qrr

Diode reverse

recovery charge

IF =1400A, VCE = 900V,

- diF/dt = 10000A/us (Tvj= 150 °C).

Tvj= 25 °C

315

μC

Tvj= 125 °C

440

Tvj= 150 °C

495

Irr

Diode reverse

recovery current

Tvj= 25 °C

790

A

Tvj= 125 °C

840

Tvj= 150 °C

870

Erec

Diode reverse

recovery energy

Tvj= 25 °C

190

mJ

Tvj= 125 °C

270

Tvj= 150 °C

290