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YMIF1500-33-I1-01 3300V 1500A High Voltage IGBT Module Smart Grid CRRC Choppers Inverter/Converter Drives

YMIF1500-33-I1-01 3300V 1500A High Voltage IGBT Module Smart Grid CRRC Choppers Inverter/Converter Drives

Introduction

Company Profile

Beijing World E To Technology Co., Ltd. is a technology-based company with import and export qualifications, Founded on the principles of innovation and excellence,stand at the forefront of semiconductor semiconductor alternative solutions and technology. specializing in semiconductor product design, contract customization, and distribution. We have strict requirements on the choice of Cooperation partners, We only cooperate ith technology companies and manufacturers with first-class design and manufacturing technology. The customization of the optimization of factory automatic transmission lines are an other important part of our contract manufacturing.

Our products

1	IGBT module and Driver
2	IGCT module and Driver
3	Inverter core board
4	Diode module
5	Thyristors module
6	Current sensor
7	Capacitor
8	Resistor
9	Solid state relay
10	Industrial robots and Core parts
11	Civil Unmanned Aircraft and Core Parts

Products Description

Features

(1) AISiC Baseplate
(2) AIN Substrates
(3) High Thermal Cycling Capability
(4)10μs Short Circuit Withstand

(5) Low Vce(sat) device

(6) High current density

Typical Applications

(1) Traction drives
(2) Motor Controllers
(3) Smart Grid
(4)High Reliability Inverter

YMIF1500-33-I1-01

3300V/1500A Single Switch IGBT

Key Parameters

Symbol	Description	Value	Unit
V_CES		3300	V
V_CE(sat)	Typ.	2.40	V
I_C	Max.	1500	A
I_C(RM)	IC(RM)	3000	A

Absolute Maximum Ratings

Symbol	Parameter	Test Conditions	Value	Unit
V_CES	Collector-emitter voltage	V_GE = 0V, T_C= 25 °C	3300	V
V_GES	Gate-emitter voltage	T_C= 25 °C	±20	V
I_C	Collector-emitter current	T_C= 75°C	1500	A
I_C(PK)	Peak collector current	t_P=1ms	3000	A
P_max	Max. transistor power dissipation	Tvj= 150°C, TC= 25 °C	15600	W
I ² t	Diode I²t	V_R=0V, t_P= 10ms, Tvj= 150 °C	720	kA²s
Visol	Isolation voltage –per module	( Commoned terminals to base plate), AC RMS,1 min, 50Hz,T_C= 25 °C	6000	V
Q_PD	Partial Discharge–per module	IEC1287. V1 = 1800V, V2 = 1300V，50HzRMS	10	pC

Thermal & Mechanical Data

Symbol	Parameter	Test Conditions	Min.	Max.	Value		Unit
R_{th(J-C) IGBT}	Thermal resistance – IGBT			8	K / kW		℃
R_{th(J-C) Diode}	Thermal resistance – Diode			16	K / kW		℃
R_{th(C-H) IGBT}	Thermal resistance – case to heatsink (IGBT)	Mounting torque 5Nm, with mounting grease 1W/m·°C		6	K / kW		℃
T_vj	Operating junction temperature	IGBT	-40	150	°C
T_vj	Operating junction temperature			Diode	-40	150	°C
M	Screw torque	Mounting –M6		5	nM
				Electrical connections –M4		2	nM
				Electrical connections –M8		10	nM

Electrical Characteristics

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
I_CES	Collector cut-off current	V_GE = 0V,V_CE = V_CES			1	mA
				V_GE = 0V, V_CE = V_CES, T_C=125 °C			90	mA
				V_GE = 0V, V_CE = V_CES, T_C=150 °C			150	mA
I_GES	Gate leakage current	V_GE = ±20V, V_CE = 0V			1	μA
V_{GE (TH)}	Gate threshold voltage	I_C = 40mA, V_GE = V_CE	5.0	6.1	7.0	V
V_{CE (sat)}	Collector-emitter saturation voltage	VGE=15V, IC= 1200A,Tvj = 25 °C		2.40	2.90	V
				VGE =15V, IC = 250A,Tvj = 125 °C		2.95	3.40	V
				VGE =15V, IC = 250A,Tvj = 150 °C		3.10	3.60	V
I_F	Diode forward current	DC		1500		A
I_FRM	Diode peak forward current	t_P= 1ms		3000		A
V_F	Diode forward voltage	I_F = 250A, V_GE = 0		2.10	2.60	V
				I_F = 250A, V_GE = 0, T_vj= 125 °C		2.25	2.70	V
				I_F = 250A, V_GE = 0, T_vj = 150 °C		2.25	2.70	V
I_SC	Short circuit current	Tvj= 150°C, V_CC= 1000V, V_GE≤15V, tp≤10μs, V_CE(max)= V_CES –L(*2)×di/dt, IEC 6074-9		5800		A
Cies	Input capacitance	V_CE= 25V, V_GE= 0V, f = 100kHz		260		nF
Qg	Gate charge	±15		25		μC
Cres	Reverse transfer capacitance	V_CE = 25V, V_GE = 0V, f = 100kHz		6.0		nF
L_M	Module inductance			10		nH
R_INT	Internal transistor resistance			110		mΩ

Tcase = 25°C unless stated other wise

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

t _d(off)

Turn-off delay time

I _C = 2400A
V _CE = 900V
L _S ~ 50nH
V _GE = ±15V
R _G(ON) = 0.5Ω
R _G(OFF)= 0.5Ω

2100

E _OFF

Turn-off energy loss

2400

t _d(on)

Turn-on delay time

750

E_ON

Turn-on energy loss

1450

Q_rr

Diode reverse recovery charge

I _F = 2400A
V _CE = 900V
diF/dt =10000A/us

1150

μC

I _rr

Diode reverse recovery current

1250

E_rec

Diode reverse recovery energy

1550

Tcase = 150°C unless stated other wise

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

t _d(off)

Turn-off delay time

I_C = 2400A
V _CE = 900V
L _S ~ 50nH
V GE = ±15V
R_G(ON) = 0.5Ω
R _G(OFF)= 0.5Ω

2290

E _OFF

Turn-off energy loss

3200

t _d(on)

Turn-on delay time

730

E _ON

Turn-on energy loss

3200

Q _rr

Diode reverse recovery charge

I _F = 2400A
V _CE = 900V
diF/dt =10000A/us

1980

μC

I_rr

Diode reverse recovery current

1450

E_rec

Diode reverse recovery energy

2720

Why Choose Us

1. we only distribute products from Chinese manufacturers with first-class technology.This is our key measure.
2. We have strict requirements on the choice of manufacturers.
3. We have the ability to provide customers with alternative solutions from China.
4. We have a responsible team.

Product packaging