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From alibaba

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From alibaba

YMIF1500-33-I1-01 3300V 1500A High Voltage IGBT Module Smart Grid CRRC Choppers Inverter/Converter Drives

Introduction
Company Profile
Beijing World E To Technology Co., Ltd. is a technology-based company with import and export qualifications, Founded on the principles of innovation and excellence,stand at the forefront of semiconductor semiconductor alternative solutions and technology. specializing in semiconductor product design, contract customization, and distribution. We have strict requirements on the choice of Cooperation partners, We only cooperate ith technology companies and manufacturers with first-class design and manufacturing technology. The customization of the optimization of factory automatic transmission lines are an other important part of our contract manufacturing.
1
IGBT module and Driver
2
IGCT module and Driver
3
Inverter core board
4
Diode module
5
Thyristors module
6
Current sensor
7
Capacitor
8
Resistor
9
Solid state relay
10
Industrial robots and Core parts
11
Civil Unmanned Aircraft and Core Parts
Products Description

Features

(1) AISiC Baseplate
(2) AIN Substrates
(3) High Thermal Cycling Capability
(4)10μs Short Circuit Withstand

(5) Low Vce(sat) device
(6) High current density

Typical Applications

(1) Traction drives
(2) Motor Controllers
(3) Smart Grid
(4)High Reliability Inverter
converter drives-0
YMIF1500-33-I1-01
3300V/1500A Single Switch IGBT
Key Parameters
Symbol
Description
Value
Unit
VCES
3300
V
VCE(sat)
Typ.
2.40
V
IC
Max.
1500
A
IC(RM)
IC(RM)
3000
A


Absolute Maximum Ratings
Symbol
Parameter
Test Conditions
Value
Unit
VCES
Collector-emitter voltage
VGE = 0V, TC= 25 °C
3300
V
VGES
Gate-emitter voltage
TC= 25 °C
±20
V
IC
Collector-emitter current
TC= 75°C
1500
A
IC(PK)
Peak collector current
tP=1ms
3000
A
Pmax
Max. transistor power dissipation
Tvj= 150°C, TC= 25 °C
15600
W
I 2 t
Diode I2t
VR=0V, tP= 10ms, Tvj= 150 °C
720
kA2s
Visol
Isolation voltage –per module
( Commoned terminals to base plate),
AC RMS,1 min, 50Hz,TC= 25 °C
6000
V
QPD
Partial Discharge–per module
IEC1287. V1 = 1800V, V2 = 1300V,50HzRMS
10
pC

Thermal & Mechanical Data
Symbol
Parameter
Test Conditions
Min.
Max.
Value
Unit
Rth(J-C) IGBT
Thermal resistance – IGBT
8
K / kW
Rth(J-C) Diode
Thermal resistance – Diode
16
K / kW
Rth(C-H) IGBT
Thermal resistance –
case to heatsink (IGBT)
Mounting torque 5Nm,
with mounting grease 1W/m·°C
6
K / kW
Tvj
Operating junction temperature
IGBT
-40
150
°C
Diode
-40
150
°C
M
Screw torque
Mounting –M6
5
nM
Electrical connections –M4
2
nM
Electrical connections –M8
10
nM
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICES
Collector cut-off current
VGE = 0V,VCE = VCES
1
mA
VGE = 0V, VCE = VCES, TC=125 °C
90
mA
VGE = 0V, VCE = VCES, TC=150 °C
150
mA
IGES
Gate leakage current
VGE = ±20V, VCE = 0V
1
μA
VGE (TH)
Gate threshold voltage
IC = 40mA, VGE = VCE
5.0
6.1
7.0
V
VCE (sat)
Collector-emitter saturation voltage
VGE=15V, IC= 1200A,Tvj = 25 °C
2.40
2.90
V
VGE =15V, IC = 250A,Tvj = 125 °C
2.95
3.40
V
VGE =15V, IC = 250A,Tvj = 150 °C
3.10
3.60
V
IF
Diode forward current
DC
1500
A
IFRM
Diode peak forward current
tP = 1ms
3000
A
VF
Diode forward voltage
IF = 250A, VGE = 0
2.10
2.60
V
IF = 250A, VGE = 0, Tvj = 125 °C
2.25
2.70
V
IF = 250A, VGE = 0, Tvj = 150 °C
2.25
2.70
V
ISC
Short circuit current
Tvj= 150°C, VCC= 1000V,
VGE≤15V, tp≤10μs,
VCE(max)= VCES –L(*2)×di/dt,

IEC 6074-9
5800
A
Cies
Input capacitance
VCE= 25V, VGE= 0V, f = 100kHz
260
nF
Qg
Gate charge
±15
25
μC
Cres
Reverse transfer capacitance
VCE = 25V, VGE = 0V, f = 100kHz
6.0
nF
LM
Module inductance
10
nH
RINT
Internal transistor resistance
110
Tcase = 25°C unless stated other wise
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
t d(off)
Turn-off delay time
I C = 2400A
V CE = 900V
L S ~ 50nH
V GE = ±15V
R G(ON) = 0.5Ω
R G(OFF)= 0.5Ω
2100
ns
E OFF
Turn-off energy loss
2400
mJ
t d(on)
Turn-on delay time
750
ns
E ON
Turn-on energy loss
1450
mJ
Q rr
Diode reverse recovery charge
I F = 2400A
V CE = 900V
diF/dt =10000A/us
1150
μC
I rr
Diode reverse recovery current
1250
A
Erec
Diode reverse recovery energy
1550
mJ
Tcase = 150°C unless stated other wise
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
t d(off)
Turn-off delay time
I C = 2400A
V CE = 900V
L S ~ 50nH
V GE = ±15V
R G(ON) = 0.5Ω
R G(OFF)= 0.5Ω
2290
ns
E OFF
Turn-off energy loss
3200
mJ
t d(on)
Turn-on delay time
730
ns
E ON
Turn-on energy loss
3200
mJ
Q rr
Diode reverse recovery charge
I F = 2400A
V CE = 900V
diF/dt =10000A/us
1980
μC
I rr
Diode reverse recovery current
1450
A
Erec
Diode reverse recovery energy
2720
mJ
Why Choose Us
1. we only distribute products from Chinese manufacturers with first-class technology.This is our key measure.
2. We have strict requirements on the choice of manufacturers.
3. We have the ability to provide customers with alternative solutions from China.
4. We have a responsible team.
Product packaging
converter drives-1

MPQ:

2pcs
converter drives-2

Add wooden case
According to customer requirements, wooden boxes can be added for protection.

converter drives-3



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