From alibaba

TIM500GDM33-PSA011 New Original CRRC IGBT Power Module Discrete Semiconductor Transistor Choppers Inverters/Converters Drives

TIM500GDM33-PSA011 New Original CRRC IGBT Power Module Discrete Semiconductor Transistor Choppers Inverters/Converters Drives

Introduction

Company Profile

Beijing World E To Technology Co., Ltd. is a technology-based company with import and export qualifications, Founded on the principles of innovation and excellence,stand at the forefront of semiconductor semiconductor alternative solutions and technology. specializing in semiconductor product design, contract customization, and distribution. We have strict requirements on the choice of Cooperation partners, We only cooperate with technology companies and manufacturers with first-class design and manufacturing technology. The customization of the optimization of factory automatic transmission lines are an other important part of our contract manufacturing.

Our products

1	IGBT module and Driver
2	IGCT module and Driver
3	Inverter core board
4	Diode module
5	Thyristors module
6	Current sensor
7	Capacitor
8	Resistor
9	Solid state relay
10	Industrial robots and Core parts
11	Civil Unmanned Aircraft and Core Parts

Products Description

Features

(1) AISiC Baseplate for high power cycling capability
(2) AIN Substrates for low thermal resistance
(3) High Thermal Cycling Capability
(4) High current density

(5) 10μs short circuit withstand
(6) Low VCEsat

Typical Applications

(1) Traction drives
(2) Motor Controllers
(3) Choppers
(4) Medium voltage inverters/converters

TIM500GDM33-PSA011

YMIBD500-33

3300V/500A High voltage IGBT modules

Key Parameters

Symbol	Description	Value	Unit
V_CES		3300	V
V_CE(sat)	Typ.	2.4	V
I_C	Max.	500	A
I_CM	ICRM	1000	A

Absolute Maximum Ratings

Symbol	Description	Value	Unit
V_CES	Collector-Emitter Voltage	3300	V
V_GES	Gate-Emitter Voltage	±20	V
I_C	Collector Current @ T_C=100℃	500	A
I_CM	Pulsed Collector Current ,tp=1ms,Tc=140°C	1000	A
P_tot	Total power dissipation,TC=25°C,per switch(IGBT)	5200	W
I ² t	Diode I ² t ,VR =0V, tP = 10ms, Tvj = 150°C	80	kA² s
V_isol	1min,f=50Hz	6000	V
t_psc	IGBT short circuit SOA VCC=2500V,VCEMCHIP≤3300V VGE≤15V,Tvj≤125°C	10	μs
I_F	DC forward current	500	A
I_FRM	Peak forward current ,tp=1ms	1000	A
Q_PD	Partial discharge,V1= 3500V ,V2= 2600V, 50Hz RMS,TC=25°C(IEC 61287)	10	pC
Mounting torques	M_SMounting – M6	5	Nm
		M_T1Electrical connections – M4		2
		M_T2Electrical connections – M8		8

Diode characteristic values

Symbol	Parameter	Test Conditions	Min.	typ	Max.	Value		Unit
V_F	Forward voltage IF =500A	Tvj = 25 °C		2.10	2.60	V		℃
				Tvj = 125 °C		2.25	2.7	V		℃
				Tvj = 15 0°C		2.25	2.7	V		℃
I_rr	Reverse recovery current I_F =500A V_CC=1800V, diF/dt=2100A/μs	Tvj = 25 °C		420		A
				Tvj = 125 °C			460		A		V
				Tvj = 150 °C			490
Q_rr	Recovered charge I_F =500A V_CC=1800V, diF/dt=2100A/μs	Tvj = 25 °C		390		µC
				Tvj = 125 °C			620
				Tvj = 150 °C			720
E_rec	Reverse recovery energy I_F =500A V_CC=1800V, diF/dt=2100A/μs	Tvj = 25 °C		480		mJ
				Tvj = 125 °C			760
				Tvj = 150 °C			900

IGBT characteristic values

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
_{V_CEsat}	Collector-emitter saturation voltage.I_C=500A,V_GE=15V	Tvj= 25°C		2.40	2.90	V
				Tvj= 125°C		2.95	3.40	V
				Tvj= 150°C		3.10	3.60	V
I_GES	Gate leakage current	V_CE=0V, V_GE=±20V, Tvj=25°C	-500		500	nA
V_{GE (TH)}	Gate-emitter threshold voltage	I_C=40mA, V_CE=V_GE, Tvj=25°C	5.5	6.1	7.0	V
I_CES	Collector-emitter saturation voltage.V_CE=3300V,V_GE=0V	Tvj= 25°C			1	mA
				Tvj= 125°C			30	mA
				Tvj = 150 °C			50	mA
I_SC	Short circuit current	tpsc ≤ 10μs, VGE =15V, Tvj = 150°C,VCC= 2500V		250		A
I_FRM	Diode peak forward current	t_P= 1ms		500		A
t_d(on)	Turn-on delay time	Tvj = 25 °C		650		ns
				Tvj = 125 °C		630		ns
				Tvj = 150 °C		620		ns
t_d(off)	Turn-off delay time	Tvj = 25 °C		1720		ns
				Tvj = 125 °C		1860		ns
				Tvj = 150 °C		1920		ns
I_SC	Short circuit current	t_psc ≤ 10μs, V_GE =15V, T_vj= 150°C,V_CC= 2500V		1800		A
Cies	Input capacitance	V_CE=25V,V_GE=0V,f=1MHz,Tvj=25°C		90		nF
Qg	Gate charge	C=500A,V_CE=1800V,V_GE=-15V…15V		5.0		µC
Cres	Reverse transfer capacitance	V_CE=25V,V_GE=0V,f=1MHz,Tvj=25°C		2		nF
E_on	Turn-on switching loss energy Tvj = 25 °C Tvj = 125 °C Tvj = 150 °C	V_CC=1800V, I_C=500A, RG(ON)=3.0Ω RG(OFF)=4.5Ω,C_GE=100nF,V_GE=±15V L_δ=150nH		730		nH
							880		mJ
							930
E_off	Turn-off switching loss energy Tvj = 25 °C Tvj = 125 °C Tvj = 150 °C				780		mJ
							900
							1020

Why Choose Us

1. we only distribute products from Chinese manufacturers with first-class technology.This is our key measure.
2. We have strict requirements on the choice of manufacturers.
3. We have the ability to provide customers with alternative solutions from China.
4. We have a responsible team.

Product packaging