1 |
IGBT module and Driver |
2 |
IGCT module and Driver |
3 |
Inverter core board |
4 |
Diode module |
5 |
Thyristors module |
6 |
Current sensor |
7 |
Capacitor |
8 |
Resistor |
9 |
Solid state relay |
10 |
Industrial robots and Core parts |
11 |
Civil Unmanned Aircraft and Core Parts |
Symbol |
Description |
Value |
Unit |
VCES |
3300 |
V |
|
VCE(sat)
|
Typ. |
2.4 |
V |
IC
|
Max. |
500 |
A |
ICM
|
ICRM |
1000 |
A |
Symbol |
Description |
Value |
Unit |
VCES |
Collector-Emitter Voltage |
3300 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
IC |
Collector Current @ TC=100℃ |
500 |
A |
ICM |
Pulsed Collector Current ,tp=1ms,Tc=140°C |
1000 |
A |
Ptot |
Total power dissipation,TC=25°C,per switch(IGBT) |
5200 |
W |
I 2 t |
Diode I 2 t ,VR =0V, tP = 10ms, Tvj = 150°C |
80 |
kA2 s |
Visol
|
1min,f=50Hz |
6000 |
V |
tpsc |
IGBT short circuit SOA VCC=2500V,VCEMCHIP≤3300V
VGE≤15V,Tvj≤125°C |
10 |
μs |
IF
|
DC forward current |
500 |
A |
IFRM
|
Peak forward current ,tp=1ms |
1000 |
A |
QPD
|
Partial discharge,V1= 3500V ,V2= 2600V, 50Hz RMS,TC=25°C(IEC 61287) |
10 |
pC |
Mounting torques |
MS Mounting – M6
|
5 |
Nm |
MT1 Electrical connections – M4 |
2 |
||
MT2 Electrical connections – M8 |
8 |
Symbol |
Parameter |
Test Conditions |
Min. |
typ |
Max. |
Value |
Unit |
|
VF |
Forward voltage IF =500A
|
Tvj = 25 °C |
2.10 |
2.60 |
V |
℃ |
||
Tvj = 125 °C |
2.25 |
2.7 |
V |
℃ |
||||
Tvj = 15 0°C |
2.25 |
2.7 |
V |
℃ |
||||
Irr |
Reverse recovery current IF =500A
VCC=1800V, diF/dt=2100A/μs |
Tvj = 25 °C |
420 |
A |
||||
Tvj = 125 °C |
460 |
A |
V |
|||||
Tvj = 150 °C |
490 |
|||||||
Qrr |
Recovered charge IF =500A
VCC=1800V, diF/dt=2100A/μs |
Tvj = 25 °C |
390 |
µC |
||||
Tvj = 125 °C |
620 |
|||||||
Tvj = 150 °C |
720 |
|||||||
Erec |
Reverse recovery energy IF =500A
VCC=1800V, diF/dt=2100A/μs |
Tvj = 25 °C |
480 |
mJ |
||||
Tvj = 125 °C |
760 |
|||||||
Tvj = 150 °C |
900 |
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
VCEsat |
Collector-emitter saturation voltage.IC=500A,VGE=15V |
Tvj= 25°C |
2.40 |
2.90 |
V |
|
Tvj= 125°C |
2.95 |
3.40 |
V |
|||
Tvj= 150°C |
3.10 |
3.60 |
V |
|||
IGES
|
Gate leakage current |
VCE=0V, VGE=±20V, Tvj=25°C |
-500 |
500 |
nA |
|
VGE (TH)
|
Gate-emitter threshold voltage |
IC=40mA, VCE=VGE, Tvj=25°C |
5.5 |
6.1 |
7.0 |
V |
ICES |
Collector-emitter saturation voltage.VCE=3300V,VGE=0V |
Tvj= 25°C |
1 |
mA |
||
Tvj= 125°C |
30 |
mA |
||||
Tvj = 150 °C |
50 |
mA |
||||
ISC |
Short circuit current |
tpsc ≤ 10μs, VGE =15V, Tvj = 150°C,VCC= 2500V |
250 |
A |
||
IFRM
|
Diode peak forward current |
tP = 1ms |
500 |
A |
||
td(on) |
Turn-on delay time |
Tvj = 25 °C |
650 |
ns |
||
Tvj = 125 °C |
630 |
ns |
||||
Tvj = 150 °C |
620 |
ns |
||||
td(off)
|
Turn-off delay time |
Tvj = 25 °C |
1720 |
ns |
||
Tvj = 125 °C |
1860 |
ns |
||||
Tvj = 150 °C |
1920 |
ns |
||||
ISC
|
Short circuit current |
tpsc ≤ 10μs, VGE =15V, Tvj = 150°C,VCC= 2500V |
1800 |
A |
||
Cies |
Input capacitance |
VCE=25V,VGE=0V,f=1MHz,Tvj=25°C |
90 |
nF |
||
Qg |
Gate charge |
C=500A,VCE=1800V,VGE=-15V…15V |
5.0 |
µC |
||
Cres |
Reverse transfer capacitance |
VCE=25V,VGE=0V,f=1MHz,Tvj=25°C |
2 |
nF |
||
Eon |
Turn-on switching loss energy Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
|
VCC=1800V, IC=500A, RG(ON)=3.0Ω RG(OFF)=4.5Ω,CGE=100nF,VGE=±15V Lδ=150nH |
730 |
nH |
||
880 |
mJ |
|||||
930 |
||||||
Eoff
|
Turn-off switching loss energy Tvj = 25 °C
Tvj = 125 °C Tvj = 150 °C |
780 |
mJ |
|||
900 |
||||||
1020 |
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