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TIM250PHM33-PSA011 IGBT Module Transistor for Choppers Inverter New and Original Choppers CRRC IGBT Power Module

TIM250PHM33-PSA011 IGBT Module Transistor for Choppers Inverter New and Original Choppers CRRC IGBT Power Module

Introduction

Company Profile

Beijing World E To Technology Co., Ltd. is a technology-based company with import and export qualifications, Founded on the principles of innovation and excellence,stand at the forefront of semiconductor semiconductor alternative solutions and technology. specializing in semiconductor product design, contract customization, and distribution. We have strict requirements on the choice of Cooperation partners, We only cooperate ith technology companies and manufacturers with first-class design and manufacturing technology. The customization of the optimization of factory automatic transmission lines are an other important part of our contract manufacturing.

Our products

1	IGBT module and Driver
2	IGCT module and Driver
3	FRD module
4	Diode module
5	Thyristors module
6	Current sensor
7	Capacitor
8	Resistor
9	Solid state relay
10	Industrial robots and Core parts
11	Civil Unmanned Aircraft and Core Parts

Products Description

Features

(1) AISiC Baseplate
(2) AIN Substrates
(3)High Thermal Cycling Capability
(4)10μs Short Circuit Withstand

Typical Applications

(1) Traction Auxiliaries
(2) Motor Controllers
(3) Choppers
(4)High Reliability Inverter

TIM250PHM33-PSA011

3300V/250A Half Bridge IGBT

Key Parameters

Symbol	Description	Value	Unit
V_CES		3300	V
V_CE(sat)	Typ.	2.5	V
I_C	Max.	250	A
I_C(RM)	IC(RM)	500	A

Absolute Maximum Ratings

Symbol	Description	Value	Unit
V_CES	Collector-Emitter Voltage	3300	V
V_GES	Gate-Emitter Voltage	±20	V
I_C	Collector Current @ T_C=100℃	250	A
I_C(PK)	Pulsed Collector Current t_p=1ms	500	A
P_max	Max. transistor power dissipation Tvj = 150°C, TC = 25 °C	2600	W
I ² t	Diode I ² t V_R =0V, t_P = 10ms, Tvj = 150 °C	20	kA² s
V_isol	Isolation voltage – per module ( Commoned terminals to baseplate), AC RMS,1 min, 50Hz,TC= 25 °C	6000	W
Q_PD	Partial discharge – per module IEC1287.V1=6900V,V2=5100V,50Hz RMS	10	pC

Thermal & Mechanical Data

Symbol	Explanation	Value	Unit
Creepage distance	Terminal to heatsink	33.0	mm
Creepage distance		Terminal to terminal	33.0	mm
Clearance	Terminal to heatsink	20.0	mm
Clearance		Terminal to terminal	20.0	mm
CTI (Comparative Tracking Index)	Diode Maximum Forward Current t_p=1ms	＞600

Thermal & Mechanical Data

Symbol	Parameter	Test Conditions	Min.	Max.	Value		Unit
R_{th(J-C) IGBT}	Thermal resistance – IGBT			48	K / kW		℃
R_{th(J-C) Diode}	Thermal resistance – Diode			80	K / kW		℃
R_{th(C-H) IGBT}	Thermal resistance – case to heatsink (IGBT)	Mounting torque 5Nm, with mounting grease 1W/m·°C		18	K / kW		℃

R_{th(C-H) Diode}	Thermal resistance – case to heatsink (Diode)	Mounting torque 5Nm, with mounting grease 1W/m·°C		36	K / kW		V
T_{vj op}	Operating junction temperature	IGBT	-40	150	°C
T_{vj op}	Operating junction temperature			Diode	-40	150	°C
M	Screw torque	Mounting –M6		5	nM
M			Electrical connections –M5		4	nM

Electrical Characteristics

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
I_CES	Collector cut-off current	V_GE = 0V,V_CE = V_CES			1	mA
				V_GE = 0V, V_CE = V_CES, T_C=125 °C			15	mA
				V_GE = 0V, V_CE = V_CES, T_C=150 °C			25	mA
I_GES	Gate leakage current	V_GE = ±20V, V^CE = 0V			1	μA
V_{GE (TH)}	Gate threshold voltage	I_C = 20mA, V_GE = VCE	5.5	6.1	7.0	V
VCE_(sat)	Collector-emitter saturation voltage	VGE =15V, IC = 250A
				VGE =15V, IC = 250A,Tvj = 125 °C
				VGE =15V, IC = 250A,Tvj = 125 °C
I_F	Diode forward current	DC		250		A
I_FRM	Diode peak forward current	t_P= 1ms		500		A
V_F	Diode forward voltage	I_F = 250A, V_GE = 0		2.10	2.40	V
				I_F = 250A, V_GE = 0, T_vj= 125 °C		2.25	2.25	V
				I_F = 250A, V_GE = 0, T_vj = 150 °C		2.25	2.25	V
I_SC	Short circuit current	T_vj= 150° C, V_CC = 2500V, V_GE≤15V, tp≤10μs, V_CE(max) = V_CES – L (*2)×di/dt, IEC 6074		900		A
Cies	Input capacitance	VCE = 25V, VGE = 0V, f = 100kHz		27		nF
Qg	Gate charge	±15		2.6		V
Cres	Reverse transfer capacitance	VCE = 25V, VGE = 0V, f = 100kHz		0.9		nF
L_M	Module inductance			40		nH
R_INT	Internal transistor resistance			0.5		mΩ

Why Choose Us

1. we only distribute products from Chinese manufacturers with first-class technology.This is our key measure.
2. We have strict requirements on the choice of manufacturers.
3. We have the ability to provide customers with alternative solutions from China.
4. We have a responsible team.

Product packaging