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From alibaba

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From alibaba

STARPOWER GD300HFX120C2S New and Original STARPOWER IGBT Module Discrete Semiconductor Modules for Inverter UPS Transistor

Introduction
Company Profile
Beijing World E To Technology Co., Ltd. is a technology-based company with import and export qualifications, Founded on the principles of innovation and excellence,stand at the forefront of semiconductor semiconductor alternative solutions and technology. specializing in semiconductor product design,contract customization, and distribution. We have strict requirements on the choice of Cooperation partners, We only cooperate with technology companies and manufacturers with first-class design and manufacturing technology. The customization of the optimization of factory automatic transmission lines are an other important part of our contract manufacturing .

Our products list:
1
IGBT module and Driver
2
IGCT module and Driver
3
Inverter core board
4
Diode module
5
Thyristors module
6
Current sensor
7
Capacitor
8
Resistor
9
Energy storage system
10
Industrial robots and Core parts
11
Civil Unmanned Aircraft and Core Parts
Products Description
product starpower gd300hfx120c2s   new and original starpower igbt module discrete semiconductor modules for inverter ups transistor-0
GD300HFX120C2S_
1200V/300A 2 in one-package

General Description
This type Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS.

Features

(1) Low VCE(sat) Trench IGBT technology
(2) 10μs short circuit capability
(3) VCE(sat) with positive temperature coefficient
(4) Maximum junction temperature 175℃
(5) Low inductance case
(6) Fast & soft reverse recovery anti-parallel FWD
(7) Isolated copper baseplate using DBC technology

Typical Applications

(1) Inverter for motor drive
(2) AC and DC servo drive amplifier
(3) Uninterruptible power supply

Absolute Maximum Ratings

TC=25℃ unless otherwise noted


IGBT
Symbol
Description
Value
Unit
VCES
Collector-Emitter Voltage
1200
V
VGES
Gate-Emitter Voltage
±20
V
IC
30Collector Current @ TC=25℃
@ TC=100℃
451
450
A
ICM
Pulsed Collector Current tp=1ms
600
A
PD
Maximum Power Dissipation @ Tj=175℃
1428
W

Diode
Symbol
Description
Value
Unit
VRRM
Repetitive Peak Reverse Voltage
1200
V
IF
Diode Continuous Forward Current
300
A
IFM
Diode Maximum Forward Current tp=1ms
600
A

Module
Symbol
Description
Value
Unit
Tjmax
Maximum Junction Temperature
175
Tjop
Operating Junction Temperature
-40 to +150
TSTG
Storage Temperature Range
-40 to +125
VISO
Isolation Voltage RMS,f=50Hz,t=1min
2500
V
Product packaging
product starpower gd300hfx120c2s   new and original starpower igbt module discrete semiconductor modules for inverter ups transistor-1

MPQ:

12pcs
product starpower gd300hfx120c2s   new and original starpower igbt module discrete semiconductor modules for inverter ups transistor-2

Delivered in the manufacturer's original packaging

product starpower gd300hfx120c2s   new and original starpower igbt module discrete semiconductor modules for inverter ups transistor-3

Add wooden case

According to customer requirements, wooden boxes can be added for protection.
Why Choose Us
1. we only distribute products from Chinese manufacturers with first-class technology.This is our key measure.
2. We have strict requirements on the choice of manufacturers.
3. We have the ability to provide customers with alternative solutions from China.
4. We have a responsible team.

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