GD650HFX170P1S Starpower Power Module New Original IGBT Transistor Module UPS Inverter 1700V Breakdown Electronic Components

GD650HFX170P1S Starpower Power Module New Original IGBT Transistor Module UPS Inverter 1700V Breakdown Electronic Components

Introduction

Company Profile

Beijing World E To Technology Co., Ltd. is a technology-based company with import and
export qualifications, mainly engaged in the distribution of semiconductor products and contract customization made in CHINA.
We have strict requirements on the choice of manufacturers. Therefore, we only distribute products from Chinese manufacturers with
first-class technology.
The customization of the optimization of factory automatic transmission lines are an other important part of our contract
manufacturing.

Our products

1	IGBT module and Driver
2	IGCT module and Driver
3	FRD module
4	Diode module
5	Thyristors module
6	Current sensor
7	Capacitor
8	Resistor
9	Solid state relay
10	Industrial robots and Core parts
11	Civil Unmanned Aircraft and Core Parts

Products Description

Features

(1) Low VCE(sat) Trench IGBT technology
(2) 10μs short circuit capability
(3) VCE(sat) with positive temperature coefficient
(4) Maximum junction temperature 175℃
(5) Low inductance case
(6) Fast & soft reverse recovery anti-parallel FWD
(7) Isolated copper baseplate using DBC technology

Typical Applications

(1) High Power Converter
(2) Wind and Solar Power
(3) Traction Drive

GD650HFX170P1S

1700V/650A 2 in one-package

General Description
This type of IGBT Power Module provides ultra
low conduction loss as well as short circuit ruggedness.
They are designed for the applications such as
wind and solar power.

Absolute Maximum Ratings

T_C=25℃ unless otherwise noted

IGBT

Symbol	Description	Value	Unit
V_CES	Collector-Emitter Voltage	1700	V
V_GES	Gate-Emitter Voltage	±20	V
I_C	Collector Current @ T_C=25℃ @ T_C=100℃	1073 650	A
I_CM	Pulsed Collector Current t_p=1ms	1300	A
P_D	Maximum Power Dissipation @ T_j=175℃	4200	W

Diode

Symbol	Description	Value	Unit
V_RRM	Repetitive Peak Reverse Voltage	1700	V
I_F	Diode Continuous Forward Current	650	A
I_FM	Diode Maximum Forward Current t_p=1ms	1300	A

Module

Symbol	Description	Value	Unit
T_jmax	Maximum Junction Temperature	175	℃
T_jop	Operating Junction Temperature	-40 to +150	℃
T_STG	Storage Temperature Range	-40 to +125	℃
V_ISO	Isolation Voltage RMS,f=50Hz,t=1min	4000	V

Why Choose Us

1. we only distribute products from Chinese manufacturers with first-class technology.This is our key measure.
2. We have strict requirements on the choice of manufacturers.
3. We have the ability to provide customers with alternative solutions from China.
4. We have a responsible team.

Product packaging