1 |
IGBT module and Driver |
2 |
IGCT module and Driver |
3 |
Inverter core board |
4 |
Diode module |
5 |
Thyristors module |
6 |
Current sensor |
7 |
Capacitor |
8 |
Resistor |
9 |
Energy storage system |
10 |
Industrial robots and Core parts |
11 |
Civil Unmanned Aircraft and Core Parts |
Symbol |
Description |
Value |
Unit |
VCES |
1200 |
V |
|
VCE(sat)
|
Typ. |
1.85 |
V |
IC
|
Max. |
1000 |
A |
IC(RM) |
Max. |
2000 |
A |
Symbol |
Description |
Value |
Unit |
VCES |
Collector-Emitter Voltage |
1700 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
IC |
Collector Current @ Tcase = 90 °C |
1000 |
A |
IC(PK) |
Peak collector current ,tp=1ms, Tcase = 110 °C |
2000 |
A |
Pmax |
Max. transistor power dissipation,Tvj = 150°C, Tcase = 25 °C |
6250 |
W |
I 2 t |
Diode I 2 t ,VR =0V, tP = 10ms, Tvj = 150°C |
144 |
kA2 s |
Visol
|
( Commoned terminals to base plate), AC RMS,1 min, 50Hz |
4000 |
V |
IF
|
Diode forward current, DC |
1000 |
A |
IFRM
|
Diode maximum forward current ,tp=1ms |
2000 |
A |
Mounting torques |
Mounting – M5 |
6 |
Nm |
Electrical connections – M8 |
10 |
Symbol |
Parameter |
Test Conditions |
Min. |
typ |
Max. |
Value |
Unit |
|
VF
|
Diode forward voltage |
IF=1000A,VGE = 0,Tvj = 25 °C |
1.80 |
2.20 |
V |
|||
IF=1000A,VGE = 0,Tvj = 125 °C |
1.90 |
2.30 |
||||||
IF=1000A,VGE = 0,Tvj = 125 °C |
1.90 |
2.30 |
||||||
IFRM
|
Diode peak forward current |
tP = 1ms |
2000 |
A |
||||
IF
|
Diode forward curren, |
DC |
1000 |
A |
||||
Irr |
Diode reverse recovery current |
IF =1000A, VCE = 900V, - diF/dt = 7200A/us (Tvj= 150 °C). @Tvj= 25 °C
@Tvj= 125 °C
@Tvj= 150 °C
|
520 |
A |
||||
620 |
||||||||
655 |
||||||||
Qrr |
Diode reverse recovery charge |
285 |
μC |
|||||
315 |
||||||||
340 |
||||||||
Erec
|
Diode reverse recovery energy |
IF =900A, VCE = 600V, - diF/dt = 6800A/us (Tvj= 150 °C).@Tvj= 25 °C @Tvj= 125 °C @Tvj= 150 °C |
110 |
mJ |
||||
235 |
||||||||
240 |
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
VCE (sat)
|
Collector-emitter saturation voltage |
VGE =15V, IC = 900A,Tvj= 25°C |
1.75 |
2.15 |
V |
|
VGE =15V, IC = 900A,Tvj= 125°C |
2.1 |
2.5 |
||||
VGE =15V, IC = 900A,Tvj= 150°C |
2.2 |
2.6 |
||||
ICES |
Collector cut-off current |
VGE =15V, IC = 900A,Tvj= 25°C |
1 |
mA |
||
VGE =15V, IC = 900A,Tvj= 125°C |
10 |
|||||
VGE =15V, IC = 900A,Tvj= 150°C |
20 |
|||||
IGES
|
Gate leakage current |
VCE=0V, VGE = ±20V, |
4 |
μA |
||
VGE (TH)
|
Gate-emitter threshold voltage |
IC = 40mA, VGE = VCE
|
5.0 |
6.0 |
7.0 |
V |
td(on)
|
Turn-on delay time @Tvj= 25 °C
@Tvj= 125 °C
@Tvj= 150 °C
|
IC =1000A, VCE = 900V, VGE = ±15V, RG(OFF) = 1.8Ω, LS = 20nH, dv/dt =3000V/us (Tvj= 150 °C). @Tvj= 25 °C
@Tvj= 25 °C
@Tvj= 25 °C
|
1320 |
ns |
||
1410 |
||||||
1440 |
||||||
td(off) |
Turn-off delay time @Tvj= 25 °C
@Tvj= 125 °C @Tvj= 150 °C |
IC =1000A,
VCE = 900V, VGE = ±15V, RG(OFF) = 1.8Ω, LS = 20nH, dv/dt =3000V/us (Tvj= 150 °C). @Tvj= 25 °C
@Tvj= 25 °C @Tvj= 25 °C |
500 |
ns |
||
470 |
||||||
450 |
||||||
ISC
|
Short circuit current |
Tvj= 150°C, VCC= 800V, VGE≤15V, tp≤10μs, VCE(max)= VCES –L(*2)×di/dt, IEC 6074-9 |
3800 |
A |
||
Cies |
Input capacitance |
VCE= 25V, VGE= 0V, f = 100kHz |
147 |
nF |
||
Cres |
Reverse transfer capacitance |
VCE= 25V, VGE= 0V, f = 100kHz |
1.5 |
nF |
||
Qg |
Gate charge |
±15V |
11.4 |
µC |
||
Eon
|
Turn-on energy loss @Tvj= 25 °C
@Tvj= 125 °C @Tvj= 150 °C |
IF =1000A, VCE = 900V, - diF/dt = 7200A/us (Tvj= 150 °C). |
340 |
mJ |
||
370 |
||||||
385 |
||||||
Eoff
|
Turn-off switching loss energy @Tvj= 25 °C
@Tvj= 125 °C @Tvj= 150 °C |
IIF =1000A, VCE = 900V, - diF/dt = 7200A/us (Tvj= 150 °C). |
350 |
mJ |
||
360 |
||||||
385 |
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