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CRRC TG1000HF17H1-S300 IGBT Module 1700V Inverters Converters Drives Original New Wind Turbines Discrete Semiconductor Modules

CRRC TG1000HF17H1-S300 IGBT Module 1700V Inverters Converters Drives Original New Wind Turbines Discrete Semiconductor Modules

Introduction

Company Profile

Beijing World E To Technology Co., Ltd. is a technology-based company with import and export qualifications, Founded on the principles of innovation and excellence,stand at the forefront of semiconductor semiconductor alternative solutions and technology. specializing in semiconductor product design, contract customization, and distribution. We have strict requirements on the choice of Cooperation partners, We only cooperate ith technology companies and manufacturers with first-class design and manufacturing technology. The customization of the optimization of factory automatic transmission lines are an other important part of our contract manufacturing.

Our products

1	IGBT module and Driver
2	IGCT module and Driver
3	Inverter core board
4	Diode module
5	Thyristors module
6	Current sensor
7	Capacitor
8	Resistor
9	Energy storage system
10	Industrial robots and Core parts
11	Civil Unmanned Aircraft and Core Parts

Products Description

Features

(1) AISiC Baseplate for high power cycling capability
(2) Cu Baseplate
(3) High Thermal Cycling Capability
(4) High current density

(5) 10μs short circuit withstand
(6) Low VCEsat

Typical Applications

(1) Motor Drives
(2) High Power Converters
(3) Wind Turbines
(4) High Reliability Inverter

TG1000HF17H1-S300

1700V/1000A Half Bridge IGBT

Key Parameters

Symbol	Description	Value	Unit
V_CES		1200	V
V_CE(sat)	Typ.	1.85	V
I_C	Max.	1000	A
IC(RM)	Max.	2000	A

Absolute Maximum Ratings(Tcase = 25°C unless stated otherwise)

Symbol	Description	Value	Unit
V_CES	Collector-Emitter Voltage	1700	V
V_GES	Gate-Emitter Voltage	±20	V
I_C	Collector Current @ Tcase = 90 °C	1000	A
I_C(PK)	Peak collector current ,tp=1ms, Tcase = 110 °C	2000	A
P_max	Max. transistor power dissipation,Tvj = 150°C, Tcase = 25 °C	6250	W
I ² t	Diode I ² t ,V_R =0V, t_P = 10ms, T_vj = 150°C	144	kA² s
V_isol	( Commoned terminals to base plate), AC RMS,1 min, 50Hz	4000	V
I_F	Diode forward current, DC	1000	A
I_FRM	Diode maximum forward current ,tp=1ms	2000	A
Mounting torques	Mounting – M5	6	Nm
	Mounting – M5	6
		Electrical connections – M8		10

Electrical Characteristics

Symbol

Parameter

Test Conditions

Min.

typ

Max.

Value

Unit

V_F

Diode forward voltage

I_F=1000A，V_GE = 0，Tvj = 25 °C

1.80

2.20

I_F=1000A，V_GE = 0，Tvj = 125 °C

1.90

2.30

I_F=1000A，V_GE = 0，Tvj = 125 °C

1.90

2.30

I_FRM

Diode peak forward current

t_P = 1ms

2000

I_F

Diode forward curren,

1000

Irr

Diode reverse
recovery current

IF =1000A,
VCE = 900V,
- diF/dt = 7200A/us
(Tvj= 150 °C).

@Tvj= 25 °C

@Tvj= 125 °C

@Tvj= 150 °C

520

620

655

Qrr

Diode reverse
recovery charge

285

μC

315

340

E_rec

Diode reverse recovery energy

IF =900A,
VCE = 600V,
- diF/dt = 6800A/us
(Tvj= 150 °C).@Tvj= 25 °C
@Tvj= 125 °C
@Tvj= 150 °C

110

235

240

Electrical Characteristics

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
V_{CE (sat)}	Collector-emitter saturation voltage	V_GE =15V, I_C = 900A,T_vj= 25°C		1.75	2.15	V
				V_GE =15V, I_C = 900A,T_vj= 125°C			2.1	2.5
				V_GE =15V, I_C = 900A,T_vj= 150°C			2.2	2.6
I_CES	Collector cut-off current	V_GE =15V, I_C = 900A,Tvj= 25°C			1	mA
				V_GE =15V, I_C = 900A,Tvj= 125°C				10
				V_GE =15V, I_C = 900A,Tvj= 150°C				20
I_GES	Gate leakage current	V_CE=0V, V_GE = ±20V,			4	μA
V_{GE (TH)}	Gate-emitter threshold voltage	I_C = 40mA, V_GE = V_CE	5.0	6.0	7.0	V
t_d(on)	Turn-on delay time @Tvj= 25 °C @Tvj= 125 °C @Tvj= 150 °C	IC =1000A, VCE = 900V, VGE = ±15V, RG(OFF) = 1.8Ω, LS = 20nH, dv/dt =3000V/us (Tvj= 150 °C). @Tvj= 25 °C @Tvj= 25 °C @Tvj= 25 °C		1320		ns
								1410
								1440
td(off)	Turn-off delay time @Tvj= 25 °C @Tvj= 125 °C @Tvj= 150 °C	IC =1000A, VCE = 900V, VGE = ±15V, RG(OFF) = 1.8Ω, LS = 20nH, dv/dt =3000V/us (Tvj= 150 °C). @Tvj= 25 °C @Tvj= 25 °C @Tvj= 25 °C		500		ns
								470
								450
I_SC	Short circuit current	Tvj= 150°C, V_CC= 800V, V_GE≤15V, tp≤10μs, V_CE(max)= VCES –L(*2)×di/dt, IEC 6074-9		3800		A
Cies	Input capacitance	V_CE= 25V, V_GE= 0V, f = 100kHz		147		nF
Cres	Reverse transfer capacitance	V_CE= 25V, V_GE= 0V, f = 100kHz		1.5		nF
Qg	Gate charge	±15V		11.4		µC
E_on	Turn-on energy loss @Tvj= 25 °C @Tvj= 125 °C @Tvj= 150 °C	IF =1000A, VCE = 900V, - diF/dt = 7200A/us (Tvj= 150 °C).		340		mJ
								370
								385
E_off	Turn-off switching loss energy @Tvj= 25 °C @Tvj= 125 °C @Tvj= 150 °C	IIF =1000A, VCE = 900V, - diF/dt = 7200A/us (Tvj= 150 °C).		350		mJ
								360
								385

Why Choose Us

1. we only distribute products from Chinese manufacturers with first-class technology.This is our key measure.
2. We have strict requirements on the choice of manufacturers.
3. We have the ability to provide customers with alternative solutions from China.
4. We have a responsible team.

Product packaging