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From alibaba

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From alibaba

CRRC TG1000HF17H1-S300 IGBT Module 1700V Inverters Converters Drives Original New Wind Turbines Discrete Semiconductor Modules

Introduction
Company Profile
Beijing World E To Technology Co., Ltd. is a technology-based company with import and export qualifications, Founded on the principles of innovation and excellence,stand at the forefront of semiconductor semiconductor alternative solutions and technology. specializing in semiconductor product design, contract customization, and distribution. We have strict requirements on the choice of Cooperation partners, We only cooperate ith technology companies and manufacturers with first-class design and manufacturing technology. The customization of the optimization of factory automatic transmission lines are an other important part of our contract manufacturing.
1
IGBT module and Driver
2
IGCT module and Driver
3
Inverter core board
4
Diode module
5
Thyristors module
6
Current sensor
7
Capacitor
8
Resistor
9
Energy storage system
10
Industrial robots and Core parts
11
Civil Unmanned Aircraft and Core Parts
Products Description

Features

(1) AISiC Baseplate for high power cycling capability
(2) Cu Baseplate
(3) High Thermal Cycling Capability
(4) High current density

(5) 10μs short circuit withstand
(6) Low VCEsat

Typical Applications

(1) Motor Drives
(2) High Power Converters
(3) Wind Turbines
(4) High Reliability Inverter
product crrc tg1000hf17h1 s300 igbt module 1700v inverters converters drives original new wind turbines discrete semiconductor modules-0
TG1000HF17H1-S300
1700V/1000A Half Bridge IGBT
Key Parameters
Symbol
Description
Value
Unit
VCES
1200
V
VCE(sat)
Typ.
1.85
V
IC
Max.
1000
A
IC(RM)
Max.
2000
A


Absolute Maximum Ratings(Tcase = 25°C unless stated otherwise)
Symbol
Description
Value
Unit
VCES
Collector-Emitter Voltage
1700
V
VGES
Gate-Emitter Voltage
±20
V
IC
Collector Current @ Tcase = 90 °C
1000
A
IC(PK)
Peak collector current ,tp=1ms, Tcase = 110 °C
2000
A
Pmax
Max. transistor power dissipation,Tvj = 150°C, Tcase = 25 °C
6250
W
I 2 t
Diode I 2 t ,VR =0V, tP = 10ms, Tvj = 150°C
144
kA2 s
Visol
( Commoned terminals to base plate), AC RMS,1 min, 50Hz
4000
V
IF
Diode forward current, DC
1000
A
IFRM
Diode maximum forward current ,tp=1ms
2000
A
Mounting torques
Mounting – M5
6
Nm
Electrical connections – M8
10
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
typ
Max.
Value
Unit
VF
Diode forward voltage
IF=1000A,VGE = 0,Tvj = 25 °C
1.80
2.20
V
IF=1000A,VGE = 0,Tvj = 125 °C
1.90
2.30
IF=1000A,VGE = 0,Tvj = 125 °C
1.90
2.30
IFRM
Diode peak forward current
tP = 1ms
2000
A
IF
Diode forward curren,
DC
1000
A
Irr
Diode reverse
recovery current
IF =1000A,
VCE = 900V,
- diF/dt = 7200A/us
(Tvj= 150 °C).
@Tvj= 25 °C
@Tvj= 125 °C
@Tvj= 150 °C
520
A
620
655
Qrr
Diode reverse
recovery charge
285
μC
315
340
Erec
Diode reverse recovery energy
IF =900A,
VCE = 600V,
- diF/dt = 6800A/us
(Tvj= 150 °C).@Tvj= 25 °C
@Tvj= 125 °C
@Tvj= 150 °C
110
mJ
235
240

Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VCE (sat)
Collector-emitter saturation voltage
VGE =15V, IC = 900A,Tvj= 25°C
1.75
2.15
V
VGE =15V, IC = 900A,Tvj= 125°C
2.1
2.5
VGE =15V, IC = 900A,Tvj= 150°C
2.2
2.6
ICES
Collector cut-off current
VGE =15V, IC = 900A,Tvj= 25°C
1
mA
VGE =15V, IC = 900A,Tvj= 125°C
10
VGE =15V, IC = 900A,Tvj= 150°C
20
IGES
Gate leakage current
VCE=0V, VGE = ±20V,
4
μA
VGE (TH)
Gate-emitter threshold voltage
IC = 40mA, VGE = VCE
5.0
6.0
7.0
V
td(on)
Turn-on delay time
@Tvj= 25 °C
@Tvj= 125 °C
@Tvj= 150 °C

IC =1000A,
VCE = 900V,
VGE = ±15V,
RG(OFF) = 1.8Ω,
LS = 20nH,
dv/dt =3000V/us
(Tvj= 150 °C).
@Tvj= 25 °C
@Tvj= 25 °C
@Tvj= 25 °C
1320
ns
1410
1440
td(off)
Turn-off delay time
@Tvj= 25 °C
@Tvj= 125 °C
@Tvj= 150 °C
IC =1000A,
VCE = 900V,
VGE = ±15V,
RG(OFF) = 1.8Ω,
LS = 20nH,
dv/dt =3000V/us
(Tvj= 150 °C).
@Tvj= 25 °C
@Tvj= 25 °C
@Tvj= 25 °C
500
ns
470
450
ISC
Short circuit current
Tvj= 150°C, VCC= 800V,
VGE≤15V, tp≤10μs,
VCE(max)= VCES –L(*2)×di/dt,
IEC 6074-9
3800
A
Cies
Input capacitance
VCE= 25V, VGE= 0V, f = 100kHz
147
nF
Cres
Reverse transfer capacitance
VCE= 25V, VGE= 0V, f = 100kHz
1.5
nF
Qg
Gate charge
±15V
11.4
µC
Eon
Turn-on energy loss
@Tvj= 25 °C
@Tvj= 125 °C
@Tvj= 150 °C
IF =1000A,
VCE = 900V,
- diF/dt = 7200A/us
(Tvj= 150 °C).
340
mJ
370
385
Eoff
Turn-off switching loss energy
@Tvj= 25 °C
@Tvj= 125 °C
@Tvj= 150 °C
IIF =1000A,
VCE = 900V,
- diF/dt = 7200A/us
(Tvj= 150 °C).
350
mJ
360
385
Why Choose Us
1. we only distribute products from Chinese manufacturers with first-class technology.This is our key measure.
2. We have strict requirements on the choice of manufacturers.
3. We have the ability to provide customers with alternative solutions from China.
4. We have a responsible team.
Product packaging
product crrc tg1000hf17h1 s300 igbt module 1700v inverters converters drives original new wind turbines discrete semiconductor modules-1

MPQ:

2pcs
product crrc tg1000hf17h1 s300 igbt module 1700v inverters converters drives original new wind turbines discrete semiconductor modules-2

Add wooden case
According to customer requirements, wooden boxes can be added for protection.

product crrc tg1000hf17h1 s300 igbt module 1700v inverters converters drives original new wind turbines discrete semiconductor modules-3



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