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From alibaba

From alibaba

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From alibaba

CRRC 1700V 2400A Hig-Voltage IGBT Module TIM2400ESM17-TSA000 New/Original Smart Grid Power Module Choppers Inverter Converter

Introduction
Company Profile
Beijing World E To Technology Co., Ltd. is a technology-based company with import and export qualifications, Founded on the principles of innovation and excellence,stand at the forefront of semiconductor semiconductor alternative solutions and technology. specializing in semiconductor product design, contract customization, and distribution. We have strict requirements on the choice of Cooperation partners, We only cooperate ith technology companies and manufacturers with first-class design and manufacturing technology. The customization of the optimization of factory automatic transmission lines are an other important part of our contract manufacturing.
1
IGBT module and Driver
2
IGCT module and Driver
3
Inverter core board
4
Diode module
5
Thyristors module
6
Current sensor
7
Capacitor
8
Resistor
9
Solid state relay
10
Industrial robots and Core parts
11
Civil Unmanned Aircraft and Core Parts
Products Description

Features

(1) AISiC Baseplate
(2) AIN Substrates
(3) High Thermal Cycling Capability
(4)10μs Short Circuit Withstand

(5) Low Vce(sat) device
(6) High current density

Typical Applications

(1) Traction drives
(2) Motor Controllers
(3) Smart Grid
(4)High Reliability Inverter
original smart grid power module choppers inverter converter-0
TIM2400ESM17-TSA000
YMIF2400-17(E)
1700V/2400A Single Switch IGBT
Key Parameters
Symbol
Description
Value
Unit
VCES
1700
V
VCE(sat)
Typ.
1.75
V
IC
Max.
2400
A
IC(RM)
IC(RM)
4800
A


Absolute Maximum Ratings
Symbol
Parameter
Test Conditions
Value
Unit
VCES
Collector-emitter voltage
VGE = 0V, TC= 25 °C
1700
V
VGES
Gate-emitter voltage
TC= 25 °C
±20
V
IC
Collector-emitter current
TC= 75°C
2400
A
IC(PK)
Peak collector current
tP=1ms
4800
A
Pmax
Max. transistor power dissipation
Tvj= 150°C, TC= 25 °C
19200
W
I 2 t
Diode I2t
VR=0V, tP= 10ms, Tvj= 150 °C
1170
kA2s
Visol
Isolation voltage –per module
( Commoned terminals to base plate),
AC RMS,1 min, 50Hz,TC= 25 °C
4000
V
QPD
Partial Discharge–per module
IEC1287. V1 = 1800V, V2 = 1300V,50HzRMS
10
pC

Thermal & Mechanical Data
Symbol
Parameter
Test Conditions
Min.
Max.
Value
Unit
Rth(J-C) IGBT
Thermal resistance – IGBT
6.5
K / kW
Rth(J-C) Diode
Thermal resistance – Diode
13
K / kW
Rth(C-H) IGBT
Thermal resistance –
case to heatsink (IGBT)
Mounting torque 5Nm,
with mounting grease 1W/m·°C
6
K / kW
Tvj
Operating junction temperature
IGBT
-40
150
°C
Diode
-40
150
°C
M
Screw torque
Mounting –M6
5
nM
Electrical connections –M4
2
nM
Electrical connections –M8
10
nM
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICES
Collector cut-off current
VGE = 0V,VCE = VCES
1
mA
VGE = 0V, VCE = VCES, TC=125 °C
40
mA
VGE = 0V, VCE = VCES, TC=150 °C
60
mA
IGES
Gate leakage current
VGE = ±20V, VCE = 0V
1
μA
VGE (TH)
Gate threshold voltage
IC = 40mA, VGE = VCE
5.0
6.0
7.0
V
VCE (sat)
Collector-emitter saturation voltage
VGE=15V, IC= 1200A,Tvj = 25 °C
1.75
V
VGE =15V, IC = 250A,Tvj = 125 °C
1.95
V
VGE =15V, IC = 250A,Tvj = 150 °C
2.05
V
IF
Diode forward current
DC
2400
A
IFRM
Diode peak forward current
tP = 1ms
4800
A
VF
Diode forward voltage
IF = 250A, VGE = 0
1.65
V
IF = 250A, VGE = 0, Tvj = 125 °C
1.75
V
IF = 250A, VGE = 0, Tvj = 150 °C
1.75
V
ISC
Short circuit current
Tvj= 150°C, VCC= 1000V,
VGE≤15V, tp≤10μs,
VCE(max)= VCES –L(*2)×di/dt,

IEC 6074-9
12000
A
Cies
Input capacitance
VCE= 25V, VGE= 0V, f = 100kHz
400
nF
Qg
Gate charge
±15
19
μC
Cres
Reverse transfer capacitance
VCE = 25V, VGE = 0V, f = 100kHz
3.0
nF
LM
Module inductance
10
nH
RINT
Internal transistor resistance
110
Tcase = 25°C unless stated other wise
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
t d(off)
Turn-off delay time
I C = 2400A
V CE = 900V
L S ~ 50nH
V GE = ±15V
R G(ON) = 0.5Ω
R G(OFF)= 0.5Ω
2320
ns
E OFF
Turn-off energy loss
500
mJ
t d(on)
Turn-on delay time
1050
ns
E ON
Turn-on energy loss
410
mJ
Q rr
Diode reverse recovery charge
I F = 2400A
V CE = 900V
diF/dt =10000A/us
480
μC
I rr
Diode reverse recovery current
1000
A
Erec
Diode reverse recovery energy
320
mJ
Tcase = 150°C unless stated other wise
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
t d(off)
Turn-off delay time
I C = 2400A
V CE = 900V
L S ~ 50nH
V GE = ±15V
R G(ON) = 0.5Ω
R G(OFF)= 0.5Ω
2340
ns
E OFF
Turn-off energy loss
1400
mJ
t d(on)
Turn-on delay time
450
ns
E ON
Turn-on energy loss
820
mJ
Q rr
Diode reverse recovery charge
I F = 2400A
V CE = 900V
diF/dt =10000A/us
820
μC
I rr
Diode reverse recovery current
1250
A
Erec
Diode reverse recovery energy
620
mJ
Why Choose Us
1. we only distribute products from Chinese manufacturers with first-class technology.This is our key measure.
2. We have strict requirements on the choice of manufacturers.
3. We have the ability to provide customers with alternative solutions from China.
4. We have a responsible team.
Product packaging
original smart grid power module choppers inverter converter-1

MPQ:

2pcs
original smart grid power module choppers inverter converter-2

Add wooden case
According to customer requirements, wooden boxes can be added for protection.

original smart grid power module choppers inverter converter-3



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