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Brief introduction
Thyristor Modules(Non-isolated Type),MT200,produced by TECHSEM .
VDRM,VRRM | Type & Outline | |
800V | MT200-08-210F2NA | MT200-08-210F2NK |
1000V | MT200-10-210F2NA | MT200-10-210F2NK |
1200V | MT200-12-210F2NA | MT200-12-210F2NK |
1400V | MT200-14-210F2NA | MT200-14-210F2NK |
1600V | MT200-16-210F2NA | MT200-16-210F2NK |
1800V | MT200-18-210F2NA | MT200-18-210F2NK |
Features:
Typical Applications:
SYMBOL |
CHARACTERISTIC |
TEST CONDITIONS |
Tj(℃) | VALUE |
UNIT | ||
Min | Type | Max | |||||
IT(AV) | Mean on-state current | 18°half sine wave 50Hz Single side cooled, Tc=90℃ | 125 |
|
| 200 | A |
IT(RMS) | RMS on-state current | 125 |
|
| 314 | A | |
IDRM IRRM | Repetitive peak current | at VDRM at VRRM | 125 |
|
| 12 | mA |
ITSM | Surge on-state current | 10ms half sine wave VR=60%VRRM |
125 |
|
| 5.2 | kA |
I2t | I2t for fusing coordination |
|
| 135 | 103A2s | ||
VTO | Threshold voltage |
|
125 |
|
| 0.80 | V |
rT | On-state slope resistance |
|
| 1.15 | mΩ | ||
VTM | Peak on-state voltage | ITM=600A | 25 |
|
| 1.62 | V |
dv/dt | Critical rate of rise of off-state voltage | VDM=67%VDRM | 125 |
|
| 800 | V/μs |
di/dt | Critical rate of rise of on-state current | Gate source 1.5A tr ≤0.5μs Repetitive | 125 |
|
| 100 | A/μs |
IGT | Gate trigger current |
VA=12V, IA=1A |
25 | 30 |
| 150 | mA |
VGT | Gate trigger voltage | 0.8 |
| 2.5 | V | ||
IH | Holding current | 20 |
| 120 | mA | ||
IL | Latching current |
|
| 1000 | mA | ||
VGD | Non-trigger gate voltage | VDM=67%VDRM | 125 |
|
| 0.2 | V |
Rth(j-c) | Thermal resistance Junction to case | Single side cooled |
|
|
| 0.13 | ℃/W |
Rth(c-h) | Thermal resistance case to heatsink | Single side cooled |
|
|
| 0.10 | ℃/W |
Fm | Terminal connection torque(M6) |
|
| 4.5 |
| 6.0 | N·m |
Mounting torque(M6) |
|
| 4.5 |
| 6.0 | N·m | |
Tvj | Junction temperature |
|
| -40 |
| 125 | ℃ |
Tstg | Stored temperature |
|
| -40 |
| 125 | ℃ |
Wt | Weight |
|
|
| 185 |
| g |
Outline | 210F2NA, 210F2NK |
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