IGBT Module,YMIF1200-33,Single Switch IGBT,CRRC

Parameter

Symbol

Conditions

Min

Max

Unit

Collector-emitter voltage

VCES

VGE=0V,Tvj≥25°C

3300

V

DC collector current

IC

TC =80 °C

1200

A

Peak collector current

ICM

tp =1ms,Tc=80°C

2400

A

Gate emitter voltage

VGE

-20

20

V

Total power dissipation

Ptot

TC =25°C, per switch(IGBT)

10500

W

DC forward current

IF

1200

A

Peak forward current

IFRM

tp = 1 ms

2400

A

Surge current

IFSM

VR = 0 V, Tvj = 125 °C,

tp = 10 ms, half-sinewave

9000

A

IGBT short circuit SOA

tpsc

VCC = 2500 V, VCEM CHIP ≤ 3300V VGE ≤ 15 V, Tvj ≤ 125 °C

10

µs

Isolation voltage

Visol

1 min, f = 50 Hz

10200

V

Junction temperature

Tvj

150

°C

Junction operating temperature

Tvj(op)

-50

125

°C

Case temperature

TC

-50

125

°C

Storage temperature

Tstg

-50

125

°C

Mounting torques

M s

Base-heatsink, M6 screws

4

6

Nm

Mt1

Main terminals, M8 screws ,

8

10

Mt2

Auxiliary terminals, M6 screws

2

3

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector (- emitter) breakdown voltage

V(BR)CES

VGE = 0 V, IC= 12 mA, Tvj = 25 °C

3300

V

Collector emitter saturation voltage

VCE sat

C = 1200 A, VGE= 15 V

Tvj=25°C

3.1

3.4

V

Tvj=125°C

3.8

4.3

V

Collector cut off current

ICES

VCE = 3300 V, VGE = 0 V

Tvj=25°C

12

mA

Tvj=125°C

120

mA

Gate leakage current

IGES

VCE = 0 V, VGE = ± 20 V, Tvj =125 °C

-500

500

nA

Gate-emitter threshold voltage

VGE(th)

IC =240mA,VCE =VGE,Tvj =25°C

5.5

7.5

V

Gate charge

Qg

IC =1200 A VCE =1800V VGE = -15V ..15 V

12.1

µC

Input capacitance

Cies

VCE = 25 V, V GE = 0 V, f = 1 MHz, Tvj = 25 °C

187

nF

Output capacitance

Coes

11.57

nF

Reverse transfer capacitance

Cres

2.22

nF

Turn-on delay time

td(on)

VCC = 1800 V, IC = 1200A,

RG = 3.9Ω ,VGE =±15V

L σ = 280nH, inductive load

Tvj=25°C

750

ns

Tvj=125°C

750

ns

Rise time

tr

Tvj=25°C

400

ns

Tvj=125°C

470

ns

Turn-off delay time

td(off)

Tvj=25°C

1600

ns

Tvj=125°C

1800

ns

Fall time

tf

Tvj=25°C

1100

ns

Tvj=125°C

1200

ns

Turn -on switching loss

Eon

Tvj=25°C

1400

mJ

Tvj=125°C

1800

mJ

Turn-off switching loss energy

Eoff

Tvj=25°C

1300

mJ

Tvj=125°C

1700

mJ

Short circuit current

ISC

VCC = 2500 V, VGE = 15V, L σ = 280nH, inductive load

5000

A

Parameter

Symbol

Conditions

min

typ

max

Unit

Forward voltage

VF

IF = 1200 A

Tvj = 25 °C

2.3

2.6

V

Tvj = 125 °C

2.35

2.6

V

Reverse recovery current

Irr

VCC= 1800 V, IC= 1200 A,

RG=2.3Ω ,VGE=±15V, L σ = 280nH,inductive load

Tvj = 25 °C

900

A

Tvj = 125 °C

1000

A

Recovered charge

Qrr

Tvj = 25 °C

700

µC

Tvj = 125 °C

1000

µC

Reverse recovery time

trr

Tvj = 25 °C

850

ns

Tvj = 125 °C

2200

ns

Reverse recovery energy

Erec

Tvj = 25 °C

850

mJ

Tvj = 125 °C

1300

mJ