All Categories

IGBT Discrete

IGBT Discrete

Home /  Products /  IGBT Discrete

IDG75X12T2,IGBT discrete,STARPOWER

1200V,75A

Brand:
STARPOWER
Spu:
DG75X12T2
  • Introduction
Introduction

Kind reminder: For more IGBT Discrete , please send an email.

Features

  • Low VCE(sat) Trench IGBT technology
  • 10μs short circuit capability
  • Low switching loss
  • Maximum junction temperature 175oC
  • VCE(sat) with positive temperature coefficient
  • Fast & soft reverse recovery anti-parallel FWD

Typical Applications

  • Inverter for motor drive
  • AC and DC servo drive amplifier
  • Uninterruptible power suppl

Absolute Maximum Ratings TC=25oC unless otherwise noted

IGBT

Symbol

Description

Values

Unit

VCES

Collector-Emitter Voltage

1200

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current @ TC=25oC @ TC=100oC

150

75

A

ICM

Pulsed Collector Current tp limited by Tvjmax

225

A

PD

Maximum Power Dissipation @ Tvj=175oC

852

W

Diode

Symbol

Description

Values

Unit

VRRM

Repetitive Peak Reverse Voltage

1200

V

IF

Diode Continuous Forward Current

75

A

IFM

Pulsed Collector Current tp limited by Tvjmax

225

A

Discrete

Symbol

Description

Values

Unit

Tvjop

Operating Junction Temperature

-40 to +175

oC

TSTG

Storage Temperature Range

-55 to +150

oC

TS

Soldering Temperature,1.6mm from case for 10s

260

oC

IGBT Characteristics TC=25oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter Saturation Voltage

IC=75A,VGE=15V, Tvj=25oC

1.75

2.20

V

IC=75A,VGE=15V, Tvj=150oC

2.10

IC=75A,VGE=15V, Tvj=175oC

2.20

VGE(th)

Gate-Emitter Threshold Voltage

IC=3.00mA,VCE=VGE, Tvj=25oC

5.0

5.8

6.5

V

ICES

Collector Cut-Off Current

VCE=VCES,VGE=0V, Tvj=25oC

250

μA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tvj=25oC

100

nA

RGint

Internal Gate Resistance

2.0

Ω

Cies

Input Capacitance

VCE=25V,f=100kHz, VGE=0V

6.58

nF

Coes

Output Capacitance

0.40

Cres

Reverse Transfer Capacitance

0.19

nF

QG

Gate Charge

VGE=-15…+15V

0.49

μC

td(on)

Turn-On Delay Time

VCC=600V,IC=75A, RG=4.7Ω,

VGE=±15V, Ls=40nH,

Tvj=25oC

41

ns

tr

Rise Time

135

ns

td(off)

Turn-Off Delay Time

87

ns

tf

Fall Time

255

ns

Eon

Turn-On Switching Loss

12.5

mJ

Eoff

Turn-Off Switching Loss

3.6

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=75A, RG=4.7Ω,

VGE=±15V, Ls=40nH,

Tvj=150oC

46

ns

tr

Rise Time

140

ns

td(off)

Turn-Off Delay Time

164

ns

tf

Fall Time

354

ns

Eon

Turn-On Switching Loss

17.6

mJ

Eoff

Turn-Off Switching Loss

6.3

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=75A, RG=4.7Ω,

VGE=±15V, Ls=40nH,

Tvj=175oC

46

ns

tr

Rise Time

140

ns

td(off)

Turn-Off Delay Time

167

ns

tf

Fall Time

372

ns

Eon

Turn-On Switching Loss

18.7

mJ

Eoff

Turn-Off Switching Loss

6.7

mJ

ISC

SC Data

tP≤10μs,VGE=15V,

Tvj=175oC,VCC=800V, VCEM≤1200V

300

A

Diode Characteristics TC=25oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VF

Diode Forward Voltage

IF=75A,VGE=0V,Tvj=25oC

1.75

2.20

V

IF=75A,VGE=0V,Tvj=150oC

1.75

IF=75A,VGE=0V,Tvj=175oC

1.75

trr

Diode Reverse Recovery Time

VR=600V,IF=75A,

-di/dt=370A/μs,VGE=-15V, Ls=40nH,

Tvj=25oC

267

ns

Qr

Recovered Charge

4.2

μC

IRM

Peak Reverse

Recovery Current

22

A

Erec

Reverse Recovery Energy

1.1

mJ

trr

Diode Reverse Recovery Time

VR=600V,IF=75A,

-di/dt=340A/μs,VGE=-15V, Ls=40nH,

Tvj=150oC

432

ns

Qr

Recovered Charge

9.80

μC

IRM

Peak Reverse

Recovery Current

33

A

Erec

Reverse Recovery Energy

2.7

mJ

trr

Diode Reverse Recovery Time

VR=600V,IF=75A,

-di/dt=320A/μs,VGE=-15V, Ls=40nH,

Tvj=175oC

466

ns

Qr

Recovered Charge

11.2

μC

IRM

Peak Reverse

Recovery Current

35

A

Erec

Reverse Recovery Energy

3.1

mJ

Discrete Characteristics TC=25oC unless otherwise noted

Symbol

Parameter

Min.

Typ.

Max.

Unit

RthJC

Junction-to-Case (per IGBT) Junction-to-Case (per Diode)

0.176 0.371

K/W

RthJA

Junction-to-Ambient

40

K/W

Get a Free Quote

Our representative will contact you soon.
Email
Name
Company Name
Message
0/1000

RELATED PRODUCT

Have questions about any products?

Our professional sales team are waiting for your consultation.
You can follow their product list and ask any questions you care about.

Get a Quote

Get a Free Quote

Our representative will contact you soon.
Email
Name
Company Name
Message
0/1000