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IT(AV) | 600A |
VDRM,VRRM | 7500V 8000V 8500V |
Features:
Typical Applications:
Controlled rectifiers
SYMBOL |
CHARACTERISTIC |
TEST CONDITIONS | Tj(℃) | VALUE |
UNIT | ||
Min | Type | Max | |||||
IT(AV) | Mean on-state current | 180°half sine wave 50Hz Double side cooled, TC=70。C | 125 |
|
| 600 | A |
VDRM VRRM | Repetitive peak off-state voltage Repetitive peak reverse voltage |
tp=10ms |
125 |
7300 |
|
8500 |
V |
IDRM IRRM | Repetitive peak current | @ VDRM @ VRRM | 125 |
|
| 200 | mA |
ITSM | Surge on-state current | 10ms half sine wave VR=0.6VRRM | 125 |
|
| 9.8 | kA |
I2t | I2t for fusing coordination |
|
| 480 | A2s*103 | ||
VTO | Threshold voltage |
|
125 |
|
| 1.04 | V |
rT | On-state slope resistance |
|
| 2.33 | mΩ | ||
VTM | Peak on-state voltage | ITM=1000A, F=24kN | 25 |
|
| 2.95 | V |
dv/dt | Critical rate of rise of off-state voltage | VDM=0.67VDRM | 125 |
|
| 2000 | V/μs |
di/dt | Critical rate of rise of on-state current | VDM= 67%VDRM to 2000A, Gate pulse tr ≤0.5μs IGM =2.0A |
125 |
|
|
100 |
A/μs |
Qrr | Recovery charge | ITM=2000A, tp=4000µs, di/dt=-5A/µs, VR=100V | 125 |
| 2500 |
| µC |
IGT | Gate trigger current |
VA=12V, IA=1A |
25 | 40 |
| 300 | mA |
VGT | Gate trigger voltage | 0.8 |
| 3.0 | V | ||
IH | Holding current | 25 |
| 200 | mA | ||
IL | Latching current |
|
| 500 | mA | ||
VGD | Non-trigger gate voltage | VDM=0.67VDRM | 125 |
|
| 0.3 | V |
Rth(j-C) | Thermal resistance Junction to case | At 1800 sine, double side cooled Clamping force 24.0kN |
|
|
| 0.022 | 。C /W |
Rth(C-h) | Thermal resistance case to heatsink |
|
|
| 0.005 | 。C /W | |
Fm | Mounting force |
|
| 19 | 24 | 26 | kN |
Tvj | Junction temperature |
|
| -40 |
| 125 | ℃ |
Tstg | Stored temperature |
|
| -40 |
| 140 | ℃ |
Wt | Weight |
|
|
| 560 |
| g |
Outline | KT50dT |
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