|
SYMBOL
|
CHARACTERISTIC
|
TEST CONDITIONS
|
Tj(℃) |
VALUE |
UNIT
|
Min |
Type |
Max |
IT(AV) |
Mean on-state current |
180°half sine wave 50Hz
Double side cooled, TC=70。C
|
125 |
|
|
600 |
A |
VDRM VRRM |
Repetitive peak off-state voltage Repetitive peak reverse voltage |
tp=10ms
|
125
|
7300
|
|
8500
|
V
|
IDRM IRRM |
Repetitive peak current |
@ VDRM @ VRRM |
125 |
|
|
200 |
mA |
ITSM |
Surge on-state current |
10ms half sine wave VR=0.6VRRM |
125 |
|
|
9.8 |
kA |
I2t |
I2t for fusing coordination |
|
|
480 |
A2s*103 |
VTO |
Threshold voltage |
|
125
|
|
|
1.04 |
V |
rT |
On-state slope resistance |
|
|
2.33 |
mΩ |
VTM |
Peak on-state voltage |
ITM=1000A, F=24kN |
25 |
|
|
2.95 |
V |
dv/dt |
Critical rate of rise of off-state voltage |
VDM=0.67VDRM |
125 |
|
|
2000 |
V/μs |
di/dt |
Critical rate of rise of on-state current |
VDM= 67%VDRM to 2000A,
Gate pulse tr ≤0.5μs IGM ＝2.0A
|
125
|
|
|
100
|
A/μs
|
Qrr |
Recovery charge |
ITM=2000A, tp=4000µs, di/dt=-5A/µs, VR=100V |
125 |
|
2500 |
|
µC |
IGT |
Gate trigger current |
VA=12V, IA=1A
|
25
|
40 |
|
300 |
mA |
VGT |
Gate trigger voltage |
0.8 |
|
3.0 |
V |
IH |
Holding current |
25 |
|
200 |
mA |
IL |
Latching current |
|
|
500 |
mA |
VGD |
Non-trigger gate voltage |
VDM=0.67VDRM |
125 |
|
|
0.3 |
V |
Rth(j-C) |
Thermal resistance Junction to case |
At 1800 sine, double side cooled Clamping force 24.0kN |
|
|
|
0.022 |
。C /W |
Rth(C-h) |
Thermal resistance case to heatsink |
|
|
|
0.005 |
。C /W |
Fm |
Mounting force |
|
|
19 |
24 |
26 |
kN |
Tvj |
Junction temperature |
|
|
-40 |
|
125 |
℃ |
Tstg |
Stored temperature |
|
|
-40 |
|
140 |
℃ |
Wt |
Weight |
|
|
|
560 |
|
g |
Outline |
KT50dT |
EN
