Brief introduction
IGBT module,produced by STARPOWER. 1700V 1200A,A3.
Features
- Low VCE(sat) Trench IGBT technology
- 10μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175oC
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology
Typical Applications
- High Power Converters
- Motor Drives
- Wind Turbines
Absolute Maximum Ratings TC=25oC unless otherwise noted
IGBT
Symbol |
Description |
Value |
Unit |
VCES |
Collector-Emitter Voltage |
1700 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
IC |
Collector Current @ TC=25oC @ TC=100oC |
1965
1200
|
A |
ICM |
Pulsed Collector Current tp=1ms |
2400 |
A |
PD |
Maximum Power Dissipation @ Tvj=175oC |
6.55 |
kW |
Diode
Symbol |
Description |
Value |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
1700 |
V |
IF |
Diode Continuous Forward Current |
1200 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
2400 |
A |
Module
Symbol |
Description |
Value |
Unit |
Tvjmax |
Maximum Junction Temperature |
175 |
oC |
Tvjop |
Operating Junction Temperature |
-40 to +150 |
oC |
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
4000 |
V |
IGBT Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat)
|
Collector to Emitter Saturation Voltage
|
IC=1200A,VGE=15V, Tvj=25oC |
|
1.85 |
2.30 |
V
|
IC=1200A,VGE=15V, Tvj=125oC |
|
2.25 |
|
IC=1200A,VGE=15V, Tvj=150oC |
|
2.35 |
|
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=48.0mA,VCE=VGE, Tvj=25oC |
5.6 |
6.2 |
6.8 |
V |
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tvj=25oC |
|
|
5.0 |
mA |
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tvj=25oC |
|
|
400 |
nA |
RGint |
Internal Gate Resistance |
|
|
1.6 |
|
Ω |
Cies |
Input Capacitance |
VCE=25V,f=100kHz, VGE=0V |
|
142 |
|
nF |
Cres |
Reverse Transfer Capacitance |
|
3.57 |
|
nF |
QG |
Gate Charge |
VGE=-15 …+15V |
|
11.8 |
|
μC |
td(on) |
Turn-On Delay Time |
VCC=900V,IC=1200A, RGon=1.5Ω,RGoff=3.3Ω, VGE=-10/+15V,
LS=110nH,Tvj=25oC
|
|
700 |
|
ns |
tr |
Rise Time |
|
420 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
1620 |
|
ns |
tf |
Fall Time |
|
231 |
|
ns |
Eon |
Turn-On Switching Loss |
|
616 |
|
mJ |
Eoff |
Turn-Off Switching Loss |
|
419 |
|
mJ |
td(on) |
Turn-On Delay Time |
VCC=900V,IC=1200A, RGon=1.5Ω,RGoff=3.3Ω, VGE=-10/+15V,
LS=110nH,Tvj=125oC
|
|
869 |
|
ns |
tr |
Rise Time |
|
495 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
1976 |
|
ns |
tf |
Fall Time |
|
298 |
|
ns |
Eon |
Turn-On Switching Loss |
|
898 |
|
mJ |
Eoff |
Turn-Off Switching Loss |
|
530 |
|
mJ |
td(on) |
Turn-On Delay Time |
VCC=900V,IC=1200A, RGon=1.5Ω,RGoff=3.3Ω, VGE=-10/+15V,
LS=110nH,Tvj=150oC
|
|
941 |
|
ns |
tr |
Rise Time |
|
508 |
|
ns |
td(off) |
Turn-Off Delay Time |
|
2128 |
|
ns |
tf |
Fall Time |
|
321 |
|
ns |
Eon |
Turn-On Switching Loss |
|
981 |
|
mJ |
Eoff |
Turn-Off Switching Loss |
|
557 |
|
mJ |
|
ISC
|
SC Data
|
tP≤10μs,VGE=15V,
Tvj=150oC,VCC=1000V,
VCEM≤1700V
|
|
4800
|
|
A
|
Diode Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VF
|
Diode Forward Voltage |
IF=1200A,VGE=0V,Tvj=25oC |
|
1.80 |
2.25 |
V
|
IF=1200A,VGE=0V,Tvj=125oC |
|
1.90 |
|
IF=1200A,VGE=0V,Tvj=150oC |
|
1.95 |
|
Qr |
Recovered Charge |
VR=900V,IF=1200A,
-di/dt=2430A/μs,VGE=-10V, LS=110nH,Tvj=25oC
|
|
217 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
490 |
|
A |
Erec |
Reverse Recovery Energy |
|
108 |
|
mJ |
Qr |
Recovered Charge |
VR=900V,IF=1200A,
-di/dt=2070A/μs,VGE=-10V, LS=110nH,Tvj=125oC
|
|
359 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
550 |
|
A |
Erec |
Reverse Recovery Energy |
|
165 |
|
mJ |
Qr |
Recovered Charge |
VR=900V,IF=1200A,
-di/dt=1970A/μs,VGE=-10V, LS=110nH,Tvj=150oC
|
|
423 |
|
μC |
IRM |
Peak Reverse
Recovery Current
|
|
570 |
|
A |
Erec |
Reverse Recovery Energy |
|
200 |
|
mJ |
Module Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
LCE |
Stray Inductance |
|
20 |
|
nH |
RCC’+EE’ |
Module Lead Resistance, Terminal to Chip |
|
0.37 |
|
mΩ |
RthJC |
Junction-to-Case (perIGBT) Junction-to-Case (per Diode) |
|
|
22.9 44.2 |
K/kW |
|
RthCH
|
Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) |
|
18.2 35.2 6.0 |
|
K/kW |
|
M
|
Terminal Connection Torque, Screw M4 Terminal Connection Torque, Screw M8 Mounting Torque, Screw M6 |
1.8 8.0 4.25 |
|
2.1
10
5.75
|
N.m |
G |
Weight of Module |
|
1500 |
|
g |
EN
