|
SYMBOL
|
CHARACTERISTIC
|
TEST CONDITIONS
|
Tj(℃)
|
VALUE |
UNIT
|
Min |
Type |
Max |
|
IT(AV)
|
Mean on-state current
|
180°half sine wave 50Hz Double side cooled, |
TC=80°C |
125
|
|
|
600 |
A |
TC=55°C |
|
|
800 |
A |
VDRM VRRM |
Repetitive peak off-state voltage Repetitive peak reverse voltage |
tp=10ms |
125 |
1900 |
|
3000 |
V |
IDRM IRRM |
Repetitive peak current |
at VDRM at VRRM |
125 |
|
|
60 |
mA |
ITSM |
Surge on-state current |
10ms half sine wave |
125 |
|
|
8.5 |
kA |
I2t |
I2t for fusing coordination |
|
|
361 |
A2s* 103 |
VTO |
Threshold voltage |
|
125 |
|
|
1.39 |
V |
rT |
On-state slope resistance |
|
|
0.83 |
mΩ |
|
VTM
|
Peak on-state voltage
|
ITM= 1800A, F= 18kN
|
30≤tq≤55 |
25
|
|
|
3.15 |
V |
56≤tq≤75 |
|
|
2.88 |
V |
76≤tq≤100 |
|
|
2.60 |
V |
dv/dt |
Critical rate of rise of off-state voltage |
VDM=0.67VDRM |
125 |
|
|
1000 |
V/μs |
di/dt |
Critical rate of rise of on-state current |
VDM= 67%VDRM to 1600A,
Gate pulse tr ≤0.5μs IGM= 1.5A Single pulse
|
125 |
|
|
1200 |
A/μs |
Qrr |
Recovery charge |
ITM= 1000A, tp=4000µs, di/dt=-20A/µs, VR= 100V |
125 |
|
550 |
|
µC |
tq |
Circuit commutated turn-off time |
ITM= 1000A, tp=4000µs, VR= 100V dv/dt=30V/µs , di/dt=-20A/µs |
125 |
30 |
|
100 |
µs |
IGT |
Gate trigger current |
VA= 12V, IA= 1A
|
25
|
40 |
|
300 |
mA |
VGT |
Gate trigger voltage |
0.9 |
|
3.0 |
V |
IH |
Holding current |
20 |
|
400 |
mA |
IL |
Latching current |
|
|
500 |
mA |
VGD |
Non-trigger gate voltage |
VDM=67%VDRM |
125 |
|
|
0.3 |
V |
Rth(j-c) |
Thermal resistance Junction to case |
At 180° sine, double side cooled Clamping force 18kN |
|
|
|
0.028 |
℃/W
|
Rth(c-h) |
Thermal resistance case to heat sink |
|
|
|
0.0075 |
Fm |
Mounting force |
|
|
15 |
|
20 |
kN |
Tvj |
Junction temperature |
|
|
-40 |
|
125 |
℃ |
Tstg |
Stored temperature |
|
|
-40 |
|
140 |
℃ |
Wt |
Weight |
|
|
|
320 |
|
g |
Outline |
KT39cT |
EN
