6500V 750A
Brief introduction:
High voltage, single switch IGBT modules produced by CRRC.6500V 750A.
It is widely applied in various fields that require high-voltage, high-current and high-power IGBT modules, such as rail transportation, power transmission and mining machinery.
The total installed quantity exceeds 100,000 units. The product features stable quality and high reliability, and has been widely praised by users.
Key Parameters
VCES |
6500 V |
VCE(sat) Typ. |
3.0 V |
IC Max. |
750 A |
IC(RM) Max. |
1500 A |
Typical Applications
Features
Absolute Maximum Ratings
Symbol |
Parameter |
Test Conditions |
Value |
Unit |
VCES |
Collector-emitter voltage |
VGE = 0V, TC= 25 °C |
6500 |
V |
VGES |
Gate-emitter voltage |
TC= 25 °C |
± 20 |
V |
IC |
Collector-emitter current |
TC = 80 °C |
750 |
A |
IC(PK) |
Peak collector current |
tP=1ms |
1500 |
A |
Pmax |
Max. transistor power dissipation |
Tvj = 150°C, TC = 25 °C |
11.7 |
kW |
I2t |
Diode I2t |
VR =0V, tP = 10ms, Tvj = 150 °C |
460 |
kA2s |
Visol |
Isolation voltage - per module |
( Commoned terminals to base plate), AC RMS,1 min, 50Hz, TC= 25 °C |
10.2 |
kV |
QPD |
Partial discharge - per module |
IEC1287. V1=6900V,V2=5100V,50Hz RMS |
10 |
pC |
Thermal & Mechanical Data
Symbol |
Explanation |
Value |
Unit |
||
|
Creepage distance |
Terminal to heatsink |
56.0 |
mm |
||
Terminal to terminal |
56.0 |
mm |
|||
|
Clearance |
Terminal to heatsink |
26.0 |
mm |
||
Terminal to terminal |
26.0 |
mm |
|||
CTI (Comparative Tracking Index) |
|
600 |
|
||
Rth(J-C) IGBT |
Thermal resistance - IGBT |
|
|
8.5 |
K / kW |
|
Rth(J-C) Diode |
Thermal resistance - Diode |
|
|
19.0 |
K / kW |
|
Rth(C-H) IGBT |
Thermal resistance - case to heatsink (IGBT) |
Mounting torque 5Nm, with mounting grease 1W/m·°C |
|
9 |
K / kW |
|
Rth(C-H) Diode |
Thermal resistance - case to heatsink (Diode) |
Mounting torque 5Nm, with mounting grease 1W/m·°C |
|
18 |
K / kW |
Tvjop |
Operating junction temperature |
IGBT |
-40 |
125 |
°C |
Diode |
-40 |
125 |
°C |
||
Tstg |
Storage temperature range |
|
-40 |
125 |
°C |
|
M |
Screw torque |
Mounting – M6 |
|
5 |
Nm |
Electrical connections – M4 |
|
2 |
Nm |
||
Electrical connections – M8 |
|
10 |
Nm |
||
Electrical Characteristics
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
ICES |
Collector cut-off current |
VGE = 0V,VCE = VCES |
|
|
1 |
mA |
VGE = 0V, VCE = VCES, TC=125 °C |
|
|
90 |
mA |
||
IGES |
Gate leakage current |
VGE = ±20V, VCE = 0V |
|
|
1 |
μA |
VGE (TH) |
Gate threshold voltage |
IC = 120mA, VGE = VCE |
5.00 |
6.00 |
7.00 |
V |
|
VCE (sat)(*1) |
Collector-emitter saturation voltage |
VGE =15V, IC = 750A |
|
3.0 |
3.4 |
V |
VGE =15V, IC = 750A, Tvj = 125 °C |
|
3.9 |
4.3 |
V |
||
IF |
Diode forward current |
DC |
|
750 |
|
A |
IFRM |
Diode peak forward current |
tP = 1ms |
|
1500 |
|
A |
|
VF(*1) |
Diode forward voltage |
IF = 750A, VGE = 0 |
|
2.55 |
2.90 |
V |
IF = 750A, VGE = 0, Tvj = 125 °C |
|
2.90 |
3.30 |
V |
||
|
ISC |
Short circuit current |
Tvj = 125°C, VCC = 4500V, VGE ≤15V, tp ≤10μs, VCE(max) = VCES – L(*2) ×di/dt, IEC 6074-9 |
|
2800 |
|
A |
Circuit Configuration
Outline
Well-equipped laboratory
We have a well-equipped laboratory for testing and strictly control the quality of our products. This ensures that the qualification rate of the products we deliver to customers reaches 100%.
Automated modern factory
The modern automated factory ensures that all performance indicators of our products are highly consistent, minimizing the differences in each product's parameters as much as possible. This not only guarantees the reliability and consistency of our products but also serves as an important guarantee for the safe and reliable operation of our customers' equipment.
Adequate production capacity
The manufacturer's strong comprehensive strength and sufficient production capacity ensure timely delivery of every order.
Application Case
1. Project Background
Rail Transit Vehicle Traction Transmission System - Main Traction Converter .
2. Pain Points
Thermal cycling from frequent starts/stops, high vibration, 25+ years lifespan
3. Our Solution
(1) Customized low thermal resistance design (ΔTj＜40°C)
(2)Mechanically enhanced package (IEC 61373 certified)
4. Provided lifetime simulation report (100k power cycles) Key Specifications
- 6500V
- 750A~ 250A
5. Results
Deployed on 50 subway trains. The average design speed is 350 Km/H - 0% field failure rate (as of 2024) - System efficiency 98%
6. Customer Feedback：The IGBT modules met all our stringent requirements for reliability and efficiency, with excellent technical support." —Chief Engineer.
7. Export Service Highlights
🌍 **Global Support**: - 48hr sample delivery (EU/NA/SEA) - Local FAEs for topology design
Why choose us?
Beijing World E To Technology Co., Ltd. is leading supplier of semiconductor products like IGBT moudel,IGBT discretes, IGBT Chips ,ADC/DAC ,Thyristor in China, mainly engaged in the official distribution of the brand of CRRC, Starpower, Techsem NARI.With import and export qualifications and 11 years experience in this industry, we export to Russia, UAE, and many other Europe area.
We have strict requirements for the selection of manufacturers, professional technical teams, and product quality control Ensure the smooth operation of projects for customers in the fields of rail transit, power industry, electric vehicles, motor drive inverters, and frequency converters.
Meanwhile, helping customers customize various thyristors and power assemblies according to their special parameter requirements is another important component Our contract manufacturing and one of our advantages.
Safe delivery
We cooperate with top international freight companies to ensure timely transportation.
At the same time, we carefully package every batch of goods delivered to our customers according to their requirements to ensure that our goods are delivered intact and undamaged.
Our professional sales team are waiting for your consultation.
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