IGBT module YMIF250-65, High voltage, single IGBT,CRRC

Parameter

Symbol

Conditions

min

max

Unit

Collector-emitter voltage

VCES

VGE =0V,Tvj ≥ 25°C

6500

V

DC collector current

IC

TC =80°C

250

A

Peak collector current

ICM

tp=1ms,Tc=80°C

500

A

Gate-emitter voltage

VGES

-20

20

V

Total power dissipation

Ptot

TC =25°C,perswitch(IGBT)

3200

W

DC forward current

IF

250

A

Peak forward current

IFRM

tp=1ms

500

A

IGBT short circuit SOA

tpsc

VCC =4400V,VCEMCHIP ≤ 6500V VGE ≤ 15V,Tvj≤ 125°C

10

μs

Isolation voltage

Visol

1min,f=50Hz

10200

V

Junction temperature

Tvj

125

℃

Junction operating temperature

Tvj(op)

-50

125

℃

Case temperature

TC

-50

125

℃

Storage temperature

Tstg

-50

125

℃

Mounting torques

MS

4

6

Nm

MT1

8

10

Parameter

Symbol

Conditions

Min

type

max

Unit

Collector (- emitter) breakdownvoltage

V(BR)CES

VGE=0V,IC=3mA, Tvj=25°C

6500

V

Collector-emitter saturation voltage

VCEsat

IC=250A,V GE=15V

Tvj= 25°C

2.6

3

3.4

V

Tvj=125°C

3.4

4

4.6

V

Collector cut off current

ICES

VCE=6500V,VGE=0V

Tvj= 25°C

4

mA

Tvj=125°C

50

mA

Gate leakage current

IGES

VCE=0V,VGE=20V,Tvj=125°C

-500

500

nA

Gate-emitter threshold voltage

V GE(TH)

IC=80mA,VCE=VGE,Tvj=25°C

5.4

6.2

7

V

Turn-on delay time

td(on)

VCC=3600V, IC=250A,

RGon=6.8Ω ,

RGoff=33Ω ,

CGE=100nF

VGE=±15V,

Ls=280nH,

感性负载

Tvj = 25 °C

1

μ s

Tvj = 125 °C

0.94

Rise time

tr

Tvj = 25 °C

0.76

Tvj = 125 °C

0.81

Turn-off delay time

td(off)

Tvj = 25 °C

3.9

μ s

Tvj = 125 °C

4.2

Fall time

tf

Tvj = 25 °C

2.2

Tvj = 125 °C

2.8

Turn-on switching loss energy

Eon

Tvj = 25 °C

3081

mJ

Tvj = 125 °C

3900

Turn-off switching loss energy

Eoff

Tvj = 25 °C

2100

mJ

Tvj = 125 °C

1236

Short circuit current

ISC

tpsc ≤ 10μ s, V GE

=15V, Tvj=125℃,V CC =

4400V

Tvj = 125 °C

940

A