|
Simbol
|
Karakteristik
|
Kondisi pengujian
|
Tj( ℃) |
Nilai |
Unit
|
Min |
TIPE |
Max. |
|
IF(AV)
|
Arus maju rata-rata |
TC=75 ℃, Per Dioda |
150
|
|
|
100 |
A |
TC=85 ℃, 20KHz, Per Modul |
|
|
75 |
A |
IF(RMS) |
Arus maju RMS |
TC=75 ℃, Per Dioda |
|
|
150 |
A |
IRRM |
Arus puncak repetitif |
pada VRRM |
125 |
|
|
10 |
mA |
|
IFSM
|
Arus Maju Lonjakan |
VR=0V, tp=10ms |
45 |
|
|
1100 |
A
|
VR=0V,tp=8.3ms |
45 |
|
|
1200 |
Saya 2t |
Saya 2t untuk koordinasi peleburan |
VR=0V, tp=10ms |
45 |
|
|
6050 |
103A 2s |
VR=0V,tp=8.3ms |
45 |
|
|
7200 |
PD |
Penghambatan Daya Maksimal |
|
|
|
280 |
|
W |
|
VFM
|
Tegangan maju puncak |
IFM= 100A
|
25 |
|
1.58 |
1.80 |
V
|
125 |
|
1.35 |
|
trr |
Waktu Pemulihan Kembali |
I F= 1A, diF/dt=-200A/μs, VR=30V |
25 |
|
90 |
|
n |
trr |
Waktu Pemulihan Kembali |
VR=600V, IF=100A, diF/dt=-200A/μs
|
25
|
|
160 |
|
n |
IRM |
Arus balik |
|
10 |
|
A |
trr |
Waktu Pemulihan Kembali |
125
|
|
400 |
|
n |
IRM |
Arus balik |
|
21 |
|
A |
Rth(j-c) |
Resistansi termal Junction ke casing |
Pada 1800 sinus. Pendinginan sisi tunggal per chip |
|
|
|
0.40 |
℃/W |
VISO |
Tegangan isolasi |
50Hz,R.M.S,t= 1menit |
|
3000 |
|
|
V |
|
Fm
|
Torsi koneksi terminal (M5) |
|
|
2.55 |
|
3.45 |
Jumlah |
Torsi pemasangan(M6) |
|
|
4.25 |
|
5.75 |
Jumlah |
TVj |
Suhu persimpangan |
|
|
-40 |
|
150 |
℃ |
TSTG |
Suhu yang disimpan |
|
|
-40 |
|
125 |
℃ |
Wt |
Berat |
|
|
|
100 |
|
g |
Rangka kerja |
224H3 |
EN
