GD900HFA120C6S

Symbol

Description

Values

Unit

VCES

Collector-Emitter Voltage

1200

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current  @ TC=90oC

900

A

ICM

Pulsed Collector Current  tp=1ms

1800

A

PD

Maximum Power Dissipation  @ Tj=175oC

3409

W

Symbol

Description

Values

Unit

VRRM

Repetitive Peak Reverse Voltage

1200

V

IF

Diode Continuous Forward Current

900

A

IFM

Diode Maximum Forward Current  tp=1ms

1800

A

IFSM

Surge Forward Current  tp=10ms  @ Tj=25oC   @ Tj=150oC

4100

3000

A

I2t

I2t-value,tp=10ms  @ Tj=25oC

@ Tj=150oC

84000

45000

A2s

Symbol

Description

Value

Unit

Tjmax

Maximum Junction Temperature

175

oC

Tjop

Operating Junction Temperature

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage  RMS,f=50Hz,t=1min

2500

V

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter

Saturation Voltage

IC=900A,VGE=15V, Tj=25oC

1.40

1.85

V

IC=900A,VGE=15V, Tj=125oC

1.60

IC=900A,VGE=15V, Tj=175oC

1.65

VGE(th)

Gate-Emitter Threshold Voltage

IC=24.0mA,VCE=VGE, Tj=25oC

5.5

6.3

7.0

V

ICES

Collector Cut-Off

Current

VCE=VCES,VGE=0V,

Tj=25oC

1.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tj=25oC

400

nA

RGint

Internal Gate Resistance

0.5

Ω

Cies

Input Capacitance

VCE=25V,f=100kHz, VGE=0V

51.5

nF

Cres

Reverse Transfer

Capacitance

0.36

nF

QG

Gate Charge

VGE=- 15…+15V

13.6

μC

td(on)

Turn-On Delay Time

VCC=600V,IC=900A,  RG=0.51Ω, LS=40nH, VGE=-8V/+15V,

Tj=25oC

330

ns

tr

Rise Time

140

ns

td(off)

Turn-Off Delay Time

842

ns

tf

Fall Time

84

ns

Eon

Turn-On Switching

Loss

144

mJ

Eoff

Turn-Off Switching

Loss

87.8

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=900A,  RG=0.51Ω, LS=40nH, VGE=-8V/+15V,

Tj=125oC

373

ns

tr

Rise Time

155

ns

td(off)

Turn-Off Delay Time

915

ns

tf

Fall Time

135

ns

Eon

Turn-On Switching

Loss

186

mJ

Eoff

Turn-Off Switching

Loss

104

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=900A,  RG=0.51Ω, LS=40nH, VGE=-8V/+15V,

Tj=175oC

390

ns

tr

Rise Time

172

ns

td(off)

Turn-Off Delay Time

950

ns

tf

Fall Time

162

ns

Eon

Turn-On Switching

Loss

209

mJ

Eoff

Turn-Off Switching

Loss

114

mJ

ISC

SC Data

tP≤8μs,VGE=15V,

Tj=150oC,VCC=800V, VCEM ≤1200V

3200

A

tP≤6μs,VGE=15V,

Tj=175oC,VCC=800V, VCEM ≤1200V

3000

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

VF

Diode Forward

Voltage

IF=900A,VGE=0V,Tj=25oC

1.55

2.00

V

IF=900A,VGE=0V,Tj=125oC

1.65

IF=900A,VGE=0V,Tj=175oC

1.55

Qr

Recovered Charge

VR=600V,IF=900A,

-di/dt=4930A/μs,VGE=-8V, LS=40nH,Tj=25oC

91.0

μC

IRM

Peak Reverse

Recovery Current

441

A

Erec

Reverse Recovery Energy

26.3

mJ

Qr

Recovered Charge

VR=600V,IF=900A,

-di/dt=4440A/μs,VGE=-8V, LS=40nH,Tj=125oC

141

μC

IRM

Peak Reverse

Recovery Current

493

A

Erec

Reverse Recovery Energy

42.5

mJ

Qr

Recovered Charge

VR=600V,IF=900A,

-di/dt=4160A/μs,VGE=-8V, LS=40nH,Tj=175oC

174

μC

IRM

Peak Reverse

Recovery Current

536

A

Erec

Reverse Recovery Energy

52.4

mJ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

R25

Rated Resistance

5.0

kΩ

∆R/R

Deviation of R100

TC=100 oC,R100=493.3Ω

-5

5

%

P25

Power

Dissipation

20.0

mW

B25/50

B-value

R2=R25exp[B25/50(1/T2-

1/(298.15K))]

3375

K

B25/80

B-value

R2=R25exp[B25/80(1/T2-

1/(298.15K))]

3411

K

B25/100

B-value

R2=R25exp[B25/100(1/T2-

1/(298.15K))]

3433

K

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

20

nH

RCC’+EE’

Module Lead Resistance, Terminal to Chip

0.80

mΩ

RthJC

Junction-to-Case (per IGBT)

Junction-to-Case (per Diode)

0.044

0.076

K/W

RthCH

Case-to-Heatsink (per IGBT)

Case-to-Heatsink (per Diode)

Case-to-Heatsink (per Module)

0.028

0.049

0.009

K/W

M

Terminal Connection Torque, Screw M6 Mounting Torque, Screw M5

3.0

3.0

6.0

6.0

N.m

G

Weight of Module

350

g