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Features
Typical Applications
Absolute Maximum Ratings TC=25℃ unless otherwise noted
Symbol |
Description |
GD450HFL120B3S |
Units |
VCES |
Collector-Emitter Voltage |
1200 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
IC |
Collector Current @ TC=25℃ @ TC= 100℃ |
715 450 |
A |
ICM |
Pulsed Collector Current tp=1ms |
900 |
A |
IF |
Diode Continuous Forward Current |
450 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
900 |
A |
PD |
Maximum Power Dissipation @ Tj=175℃ |
2679 |
W |
Tjmax |
Maximum Junction Temperature |
175 |
℃ |
Tjop |
Operating Junction Temperature |
-40 to +150 |
℃ |
TSTG |
Storage Temperature Range |
-40 to +125 |
℃ |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
2500 |
V |
Mounting Torque |
Power Terminal Screw:M5 Mounting Screw:M6 |
2.5 to 5.0 3.0 to 5.0 |
N.m |
Electrical Characteristics of IGBT TC=25℃ unless otherwise noted
Off Characteristics
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
V(BR)CES |
Collector-Emitter Breakdown Voltage |
Tj=25℃ |
1200 |
|
|
V |
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25℃ |
|
|
5.0 |
mA |
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25℃ |
|
|
400 |
nA |
On Characteristics
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=18.0mA,VCE=VGE, Tj=25℃ |
5.0 |
5.8 |
7.0 |
V |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=450A,VGE=15V, Tj=25℃ |
|
2.00 |
2.45 |
V |
IC=450A,VGE=15V, Tj=125℃ |
|
2.20 |
|
Switching Characteristics
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=450A, RG=2.2Ω, VGE=±15V, Tj=25℃ |
|
220 |
|
ns |
tr |
Rise Time |
|
68 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
475 |
|
ns |
|
tf |
Fall Time |
|
55 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
48.0 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
28.2 |
|
mJ |
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=450A, RG=2.2Ω, VGE=±15V, Tj=125℃ |
|
250 |
|
ns |
tr |
Rise Time |
|
72 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
530 |
|
ns |
|
tf |
Fall Time |
|
80 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
66.0 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
45.0 |
|
mJ |
|
Cies |
Input Capacitance |
VCE=25V,f=1Mhz, VGE=0V |
|
31.8 |
|
nF |
Coes |
Output Capacitance |
|
2.13 |
|
nF |
|
Cres |
Reverse Transfer Capacitance |
|
1.41 |
|
nF |
|
|
ISC |
SC Data |
tP≤10μs,VGE=15 V, Tj=125℃,VCC=900V, VCEM≤1200V |
|
1950 |
|
A |
QG |
Gate Charge |
VCC=600V,IC=450A, VGE=-15 ﹍+15V |
|
4.59 |
|
μC |
RGint |
Internal Gate Resistance |
|
|
0.7 |
|
Ω |
LCE |
Stray Inductance |
|
|
|
20 |
nH |
|
RCC’+EE’ |
Module Lead Resistance, Terminal To Chip |
|
|
0.35 |
|
mΩ |
Electrical Characteristics of Diode TC=25℃ unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
VF |
Diode Forward Voltage |
IF=450A VGE=0V |
Tj=25℃ |
|
1.72 |
2.12 |
V |
Tj=125℃ |
|
1.73 |
|
||||
Qr |
Recovered Charge |
IF=450A, VR=600V, RG=2.2Ω, VGE=-15V |
Tj=25℃ |
|
36.2 |
|
μC |
Tj=125℃ |
|
78.1 |
|
||||
IRM |
Peak Reverse Recovery Current |
Tj=25℃ |
|
234 |
|
A |
|
Tj=125℃ |
|
314 |
|
||||
Erec |
Reverse Recovery Energy |
Tj=25℃ |
|
19.1 |
|
mJ |
|
Tj=125℃ |
|
36.3 |
|
||||
Thermal Characteristics
Symbol |
Parameter |
Typ. |
Max. |
Units |
RθJC |
Junction-to-Case (per IGBT) |
|
0.056 |
K/W |
RθJC |
Junction-to-Case (per Diode) |
|
0.107 |
K/W |
RθCS |
Case-to-Sink (Conductive grease applied) |
0.035 |
|
K/W |
Weight |
Weight Module |
300 |
|
g |
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