Pengenalan ringkas
Modul IGBT ,modul IGBT suis tunggal yang dihasilkan oleh CRRC. 1700V 1200A.
Kunci Parameter
V CES |
1700 |
V |
V CE (sat ) |
(Jenis) |
2.30 |
V |
Saya C |
(Max) |
800 |
A |
Saya C ((RM) |
(Max) |
1600 |
A |
Tipikal Aplikasi
- Penggerak tarikan
- Pengendali Motor
-
Angin Kuasa
-
Tinggi Kebolehtuan Inverter
Ciri-ciri
-
AlSiC Asas
-
AIN Substrat
-
Tinggi Termal Kitaran Keupayaan
-
10μ s Pendek LITUPAN Tahan.
-
Rendah V cE (sat ) peranti
-
Tinggi semasa ketumpatan
Absolut Maksimum Penilaian
(Simbol) |
(Parameter) |
(Syarat ujian) |
(nilai) |
(Unit) |
VCES |
Voltan kolektor-emiter |
V GE = 0V, TC= 25 。C |
1700 |
V |
V GES |
Voltan penyiaran pintu |
TC= 25 。C |
± 20 |
V |
I C |
Arus kolektor-penerbit |
TC = 80 。C |
800 |
A |
I C (((PK) |
Arus puncak kolektor |
t P=1ms |
1600 |
A |
P max |
Maks. pengaliran kuasa transistor |
Tvj = 150 。C, TC = 25 。C |
6.94 |
kw |
I 2t |
Dioda I 2t |
VR =0V, t P = 10ms, Tvj = 125 。C |
120 |
kA2s |
|
Visol
|
Voltan penebat setiap modul |
(Terminal biasa ke plat asas),
AC RMS,1 minit, 50Hz,TC= 25 。C
|
4000 |
V |
Q PD |
Pelepasan separa setiap modul |
IEC1287. V 1 = 1800V, V 2 = 1300V, 50Hz RMS, TC = 25 。C |
10 |
pC |
Ciri-ciri elektrik
(Simbol ) |
(Parameter) |
(Syarat ujian) |
(Min ) |
(Jenis ) |
(Max ) |
(Unit ) |
|
|
I CES
|
Arus pemotongan kolektor |
V GE = 0V,VCE = VCES |
|
|
1 |
mA |
|
V GE = 0V, VCE = VCES, TC = 125 ° C |
|
|
25 |
mA |
|
I GES |
Pasaran kebocoran pintu |
V GE = ±20V, VCE = 0V |
|
|
4 |
μA |
|
V GE (TH) |
Voltan ambang pintu |
I C = 40mA, V GE = VCE |
5.00 |
5.70 |
6.50 |
V |
|
|
VCE (berada)
|
Tegangan Penyerapan Pengumpul-Pemancar |
V GE = 15V, I C = 800A |
|
2.30 |
2.60 |
V |
|
V GE = 15V, I C = 800A,Tvj = 125 ° C |
|
2.80 |
3.10 |
V |
|
I F |
Diod arus ke hadapan |
直流 DC |
|
|
800 |
A |
|
I FRM |
Arus Maju Maksimum Dioda |
t P = 1ms |
|
|
1600 |
A |
|
|
VF(*1)
|
Voltan dioda ke hadapan |
I F = 800A |
|
1.70 |
2.00 |
V |
|
I F = 800A, Tvj = 125 °C |
|
1.80 |
2.10 |
V |
|
C ies |
Kapasiti input |
VCE = 25V, V GE = 0V, f = 1MHz |
|
60 |
|
nF |
|
Q g |
Bayaran pintu |
±15V |
|
9 |
|
μC |
|
C res |
Kapasiti pemindahan terbalik |
VCE = 25V, V GE = 0V, f = 1MHz |
|
-
|
|
nF |
|
L M |
Induktansi modul |
|
|
20 |
|
nH |
|
R INT |
Rintangan transistor dalaman |
|
|
270 |
|
μΩ |
|
|
I SC
|
Arus litar pintas, ISC |
Tvj = 125°C, VCC = 1000V,
V GE ≤15V, tp ≤10μs,
VCE(max) = VCES – L (*2)×di/dt,
IEC 6074-9
|
|
3700
|
|
A
|
|
td ((off) |
Masa kelewatan penutupan |
I C =800A
VCE =900V
L ~ 100nH
V GE = ±15V
RG(ON) = 2.2Ω
RG(OFF)= 2.2Ω
|
|
890 |
|
n |
t f |
Waktu kejatuhan |
|
220 |
|
n |
E OFF |
Kehilangan tenaga penutupan |
|
220 |
|
mJ |
td ((on) |
Masa kelewatan penyambutan |
|
320 |
|
n |
t r |
Masa naik |
|
190 |
|
n |
EON |
Kehilangan tenaga semasa menyala |
|
160 |
|
mJ |
Q rr |
Muatan pemulihan diod terbalik |
I F = 800A
VCE = 900V
diF/dt =4000A/us
|
|
260 |
|
μC |
I r |
Diod arus pemulihan terbalik |
|
510 |
|
A |
E rec |
Diod pemulihan tenaga terbalik |
|
180 |
|
mJ |
td ((off) |
Masa kelewatan penutupan |
I C =800A
VCE =900V
L ~ 100nH
V GE = ±15V
RG(ON) = 2.2Ω
RG(OFF)= 2.2Ω
|
|
980 |
|
n |
t f |
Waktu kejatuhan |
|
280 |
|
n |
E OFF |
Kehilangan tenaga penutupan |
|
290 |
|
mJ |
td ((on) |
Masa kelewatan penyambutan |
|
400 |
|
n |
t r |
Masa naik |
|
250 |
|
n |
EON |
Kehilangan tenaga semasa menyala |
|
230 |
|
mJ |
Q rr |
Muatan pemulihan diod terbalik |
I F = 800A
VCE = 900V
diF/dt =4000A/us
|
|
420 |
|
μC |
I r |
Diod arus pemulihan terbalik |
|
580 |
|
A |
E rec |
Diod pemulihan tenaga terbalik |
|
280 |
|
mJ |
EN
