YMIBH250-33,Modul IGBT,Jambatan Separuh IGBT,CRRC

Simbol

Parameter

Keadaan Ujian

Nilai

Unit

VCES

Voltan kolektor-emiter

VGE = 0V, TC = 25 °C

3300

V

VGES

Voltan penyiaran pintu

TC= 25 °C

± 20

V

IC

Arus kolektor-penerbit

TC = 100 °C

250

A

IC ((PK)

Arus puncak kolektor

tP=1ms

500

A

Pmax

Maks. pengaliran kuasa transistor

Tvj = 150°C, TC = 25 °C

2.6

kw

I2t

Dioda I2t

VR = 0V, tP = 10ms, Tvj = 150 °C

20

kA2s

Visol

Voltan penebat - setiap modul

( Terminal yang disambungkan ke plat asas), AC RMS,1 min, 50Hz, TC= 25 °C

6

kV

QPD

Pelepasan separa - setiap modul

IEC1287. V1=6900V,V2=5100V,50Hz RMS

10

pC

Simbol

Parameter

Keadaan Ujian

Min.

- TIP.

Max.

Unit

ICES

Arus pemotongan kolektor

VGE = 0V,VCE = VCES

1

mA

VGE = 0V, VCE = VCES, TC=125 °C

15

mA

VGE = 0V, VCE = VCES, TC=150 °C

25

mA

IGES

Pasaran kebocoran pintu

VGE = ±20V, VCE = 0V

1

μA

VGE (TH)

Voltan ambang pintu

IC = 20mA, VGE = VCE

5.5

6.1

7.0

V

VCE (berada)

Penuh kolektor-emiter voltan

VGE = 15V, IC = 250A

2.50

2.80

V

VGE = 15V, IC = 250A, Tvj = 125 °C

3.15

3.45

V

VGE = 15V, IC = 250A, Tvj = 125 °C

3.30

3.60

V

IF

Diod arus ke hadapan

DC

250

A

IFRM

Pasaran arus hadapan puncak dioda

tP = 1ms

500

A

VF(*1)

Voltan dioda ke hadapan

IF = 250A, VGE = 0

2.10

2.40

V

IF = 250A, VGE = 0, Tvj = 125 °C

2.25

2.55

V

IF = 250A, VGE = 0, Tvj = 150 °C

2.25

2.55

V

ISC

Arus pendek😉

Tvj = 150°C, VCC = 2500V, VGE ≤15V, tp ≤10μs,

VCE ((max) = VCES L ((*2) ×di/dt, IEC 6074-9

900

A

ICES

Arus pemotongan kolektor

VGE = 0V,VCE = VCES

1

mA

VGE = 0V, VCE = VCES, TC=125 °C

15

mA

VGE = 0V, VCE = VCES, TC=150 °C

25

mA

IGES

Pasaran kebocoran pintu

VGE = ±20V, VCE = 0V

1

μA

VGE (TH)

Voltan ambang pintu

IC = 20mA, VGE = VCE

5.5

6.1

7.0

V

VCE (berada)

Penuh kolektor-emiter

voltan

VGE = 15V, IC = 250A

2.50

2.80

V

VGE = 15V, IC = 250A, Tvj = 125 °C

3.15

3.45

V

VGE = 15V, IC = 250A, Tvj = 125 °C

3.30

3.60

V

IF

Diod arus ke hadapan

DC

250

A

IFRM

Pasaran arus hadapan puncak dioda

tP = 1ms

500

A

VF(*1)

Voltan dioda ke hadapan

IF = 250A, VGE = 0

2.10

2.40

V

IF = 250A, VGE = 0, Tvj = 125 °C

2.25

2.55

V

IF = 250A, VGE = 0, Tvj = 150 °C

2.25

2.55

V

ISC

Arus pendek😉

Tvj = 150°C, VCC = 2500V, VGE ≤15V, tp ≤10μs,

VCE ((max) = VCES L ((*2) ×di/dt, IEC 6074-9

900

A

t d (((off)

Masa kelewatan penutupan

Saya C = 250A,

V CE = 1800V, V GE = ± 15V, R G ((OFF) = 9.0Ω , C GE = 56nF,

L S = 150nH,

T vj = 25 °C

1480

n

T vj = 125 °C

1550

T vj = 150 °C

1570

t f

Waktu kejatuhan

T vj = 25 °C

1280

n

T vj = 125 °C

1920

T vj = 150 °C

2120

E Dimatikan

Kehilangan tenaga penutupan

T vj = 25 °C

300

mJ

T vj = 125 °C

380

T vj = 150 °C

400

t d (dalam)

Masa kelewatan penyambutan

Saya C = 250A,

V CE = 1800V, V GE = ± 15V, R G ((ON) = 6.0Ω , C GE = 56nF,

L S = 150nH,

T vj = 25 °C

640

n

T vj = 125 °C

650

T vj = 150 °C

650

t r

Masa naik

T vj = 25 °C

220

n

T vj = 125 °C

235

T vj = 150 °C

238

E Pada

Tenaga penyambungan kerugian

T vj = 25 °C

395

mJ

T vj = 125 °C

510

T vj = 150 °C

565

Q rr

Dioda songsang

bayaran pemulihan

Saya F = 250A,

V CE = 1800V,

- D saya F /dt = 1200A/us, (T vj = 125 °C).

T vj = 25 °C

190

μC

T vj = 125 °C

295

T vj = 150 °C

335

Saya rr

Dioda songsang

arus pemulihan

T vj = 25 °C

185

A

T vj = 125 °C

210

T vj = 150 °C

216

E rEC

Dioda songsang

tenaga pemulihan

T vj = 25 °C

223

mJ

T vj = 125 °C

360

T vj = 150 °C

410