GD1000HFX170P2,Modul IGBT,Lembaga IGBT Setengah Jambatan,STARPOWER

Simbol

Parameter

Keadaan Ujian

Nilai

Unit

VCES

Voltan kolektor-emiter

VGE = 0V, TC = 25 °C

1700

V

VGES

Voltan penyiaran pintu

TC= 25 °C

± 20

V

IC

Arus kolektor-penerbit

TC = 65 °C

1400

A

IC ((PK)

集电极峰值电流

Arus puncak kolektor

tP=1ms

2800

A

Pmax

Maks. pengaliran kuasa transistor

Tvj = 150°C, TC = 25 °C

6.25

kw

I2t

Dioda I2t

VR = 0V, tP = 10ms, Tvj = 150 °C

145

kA2s

Visol

Voltan penebat - setiap modul

Terminal biasa ke plat asas), AC RMS,1 minit, 50Hz, TC= 25 °C

4000

V

Simbol

Parameter

Keadaan Ujian

Min.

- TIP.

Max.

Unit

ICES

Arus pemotongan kolektor

VGE = 0V,VCE = VCES

1

mA

VGE = 0V, VCE = VCES, TC=125 °C

20

mA

VGE = 0V, VCE = VCES, TC=150 °C

30

mA

IGES

Pasaran kebocoran pintu

VGE = ±20V, VCE = 0V

0.5

μA

VGE (TH)

Voltan ambang pintu

IC = 30mA, VGE = VCE

5.00

6.00

7.00

V

VCE (berada)

Penuh kolektor-emiter voltan

VGE = 15V, IC = 1400A

2.00

2.40

V

VGE = 15V, IC = 1400A, Tvj = 125 °C

2.45

2.70

V

VGE = 15V, IC = 1400A, Tvj = 150 °C

2.55

2.80

V

IF

Diod arus ke hadapan

DC

1400

A

IFRM

Pasaran arus hadapan puncak dioda

tP = 1ms

2800

A

VF(*1)

Voltan dioda ke hadapan

IF = 1400A, VGE = 0

1.80

2.20

V

IF = 1400A, VGE = 0, Tvj = 125 °C

1.95

2.30

V

IF = 1400A, VGE = 0, Tvj = 150 °C

2.00

2.40

V

ISC

Arus pendek😉

Tvj = 150°C, VCC = 1000V, VGE ≤15V, tp ≤10μs,

VCE ((max) = VCES L ((*2) ×di/dt, IEC 6074-9

5400

A

Ces

kapasiti input

Kapasiti input

VCE = 25V, VGE = 0V, f = 100kHz

113

nF

Qg

Bayaran pintu

±15V

11.7

μC

Cres

Kapasiti pemindahan terbalik

VCE = 25V, VGE = 0V, f = 100kHz

3.1

nF

LM

Induktansi modul

10

nH

RINT

Rintangan transistor dalaman

0.2

mΩ

td ((off)

Masa kelewatan penutupan

IC = 1400A,

VCE = 900V,

VGE = ±15V, RG ((OFF) = 1.8Ω, LS = 20nH,

dv/dt =3000V/us (Tvj= 150 °C).

Tvj= 25 °C

1520

n

Tvj= 125 °C

1580

Tvj= 150 °C

1600

tF

下降时间 Waktu kejatuhan

Tvj= 25 °C

460

n

Tvj= 125 °C

610

Tvj= 150 °C

650

EOFF

Kehilangan tenaga penutupan

Tvj= 25 °C

460

mJ

Tvj= 125 °C

540

Tvj= 150 °C

560

td ((on)

Masa kelewatan penyambutan

IC = 1400A,

VCE = 900V,

VGE = ±15V, RG(ON) = 1.2Ω, LS = 20nH,

di/dt = 10000A/us (Tvj= 150 °C).

Tvj= 25 °C

400

n

Tvj= 125 °C

370

Tvj= 150 °C

360

tr

Masa naik

Tvj= 25 °C

112

n

Tvj= 125 °C

120

Tvj= 150 °C

128

EON

Kehilangan tenaga semasa menyala

Tvj= 25 °C

480

mJ

Tvj= 125 °C

580

Tvj= 150 °C

630

Qrr

Dioda Balik

bayaran pemulihan

IF = 1400A, VCE = 900V,

- diF/dt = 10000A/us (Tvj= 150 °C).

Tvj= 25 °C

315

μC

Tvj= 125 °C

440

Tvj= 150 °C

495

Irr

Dioda Balik

arus pemulihan

Tvj= 25 °C

790

A

Tvj= 125 °C

840

Tvj= 150 °C

870

Erec

Dioda Balik

tenaga pemulihan

Tvj= 25 °C

190

mJ

Tvj= 125 °C

270

Tvj= 150 °C

290