IGBT Die

IGBT 3300V 62.5A IGBT Die High voltage IGBT Die Ultra low loss thin IGBT die Highly rugged SPT+ design Large SOA Passivation: Nitride plus polyimide

3300V 62.5A

Brand:

Spu:

DG50P45K1

Introduction

Introduction

■Features

Ultra low loss thin IGBT die
Highly rugged SPT+ design
Large SOA
Passivation: Nitride plus polyimide

■ Maximum Rated Values

Parameter	Symbol	Conditions	Value		Unit
Parameter	Symbol	Conditions	min	max	Unit
Collector-Emitter Voltage	V_CES	V_GE = 0 V		3300	V
DC Collector Current	I_C			63	A
Peak Collector Current	I_CM	Limited by Tvjmax		125	A
Gate-Emitter Voltage	V_GES		-20	+20	V
IGBT short circuit SOA	t_psc	VCC = 2500 V, VCEM ≤ 3300 V, VGE ≤ 15 V,Tvj ≤ 150 °C		10	μs
Junction Temperature	T_vj		-40	125	°C

■ IGBT Characteristic Values

Parameter	Symbol	Conditions		Value			Unit
Parameter	Symbol	Conditions		Min.	Typ.	Max.	Unit
Collector-Emitter Breakdown Voltage	V(BR)CES	VGE = 0 V, IC = 1 mA, Tvj = 25 °C		3300			V
Collector-Emitter Saturation Voltage	VCE(sat)	IC = 63 A, VGE = 15 V	Tvj = 25 °C		2.45	2.95	V
Collector-Emitter Saturation Voltage	VCE(sat)	IC = 63 A, VGE = 15 V	Tvj = 150 °C		3.30	3.80	V
Collector-Emitter Cut-off Current	ICES	VCE = 3300 V,VGE = 0 V	Tvj = 25 °C			100	µA
Collector-Emitter Cut-off Current	ICES	VCE = 3300 V,VGE = 0 V	Tvj = 150 °C		2000		µA
Gate-Emitter Leakage Current	IGES	VCE = 0 V,VGE = ±20 V, Tvj = 150 °C		-500		500	nA
Gate-Emitter Threshold Voltage	VGE(th)	IC = 10 mA, VCE = VGE, Tvj = 25 °C		5.8	6.8	7.8	V
Gate Charge	QG	IC = 63 A, VCE = 1800 V, VGE = -15 V ~ 15 V			500		nC
Input Capacitance	Cies	VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 °C			6.38		nF
Output Capacitance	Coes				0.5		nF
Reverse Transfer Capacitance	Cres				0.13		nF
Internal Gate Resistance	RGint				5		Ω
Turn-on Delay Time	td(on)	VCC = 1800 V, IC = 63 A, RG = 24 Ω, CGE = 13.75 nF, VGE = ±15 V, Ls = 3600 nH, inductive load	Tvj = 25 °C		600		ns
Turn-on Delay Time	td(on)		Tvj = 150 °C		680		ns
Rise Time	tr		Tvj = 25 °C		260		ns
Rise Time	tr		Tvj = 150 °C		300		ns
Turn-off Delay Time	td(off)		Tvj = 25 °C		1700		ns
Turn-off Delay Time	td(off)		Tvj = 150 °C		1900		ns
Fall Time	tf		Tvj = 25 °C		1000		ns
Fall Time	tf		Tvj = 150 °C		1500		ns
Turn-on Switching Energy	Eon	VCC = 1800 V, IC = 63 A, RG = 24 Ω, CGE = 13.75 nF, VGE = ±15 V, Ls = 3600 nH, inductive load, FWD: ½ DD125F33K2	Tvj = 25 °C		67		mJ
Turn-on Switching Energy	Eon		Tvj = 150 °C		91		mJ
Turn-off Switching Energy	Eoff		Tvj = 25 °C		88		mJ
Turn-off Switching Energy	Eoff		Tvj = 150 °C		110		mJ
Short Circuit Current	ISC	VGE = 15 V, tpsc ≤ 10 µs, VCC = 2500 V, Tvj = 150 °C, VCEM ≤ 3300 V			270		A

high voltage igbt 4500v 50a igbt die ultra low loss thin igbt die highly rugged spt design large soa passivation nitride plus polyimide551-0

IGBT Dies Catalogue

A rich product range meets customers' demands for IGBT dies of different voltage levels.
Customers can choose between 8-inch and 12-inch wafers, which helps them effectively reduce costs.

IGBT Dies catalog

Item No.	Spec		Technology	Band
Item No.	Voltage	Current	Technology	Band
10	4500V	50A	EPT-FS
	3300V	62.5A	EPT-FS
	1700V	75A	Trench-FS
		100A	Trench-FS
		150A	Trench-FS
		200A	Trench-FS
	1200V	100A	Trench-FS
		140A	Trench-FS
		150A	Trench-FS
		200A	Trench-FS
		250A	Trench-FS
		300A	Trench-FS
	950V	100A	Trench-FS
	950V	200A	Trench-FS
	750V	200A	Trench-FS
	750V	315A	Trench-FS
	650V	75A	Trench-FS

Automated modern factories

The modern automated factory ensures that all performance indicators of our products are highly consistent, minimizing the differences in each product's parameters as much as possible. This not only guarantees the reliability and consistency of our products but also serves as an important guarantee for the safe and reliable operation of our customers' equipment.

Well-equipped laboratory

We have a well-equipped laboratory for testing and strictly control the quality of our products. This ensures that the qualification rate of the products we deliver to customers reaches 100%.

high voltage igbt 4500v 50a igbt die ultra low loss thin igbt die highly rugged spt design large soa passivation nitride plus polyimide551-1

Adequate production capacity

The manufacturer's strong comprehensive strength and sufficient production capacity ensure timely delivery of every order.

Wide applications

Our IGBT dies can meet the requirements for manufacturing IGBT modules in electrical equipment for industrial fields such as rail transportation, power transmission, solar power generation, energy storage, induction heating devices, welding machines, and automatic control.

The wide range of industrial applications has fully validated the quality of our IGBT Dies and received high praise and approval from customers.

Our users

Our users span across various industrial sectors.

Why choose us?

Beijing World E To Technology Co., Ltd. is leading supplier of semiconductor products like IGBT moudel,IGBT discretes, IGBT Chips ,ADC/DAC ,Thyristor in China, mainly engaged in the official distribution of the brand of CRRC, Starpower, Techsem NARI.With import and export qualifications and 11 years experience in this industry, we export to Russia, UAE, and many other Europe area.
We have strict requirements for the selection of manufacturers, professional technical teams, and product quality control Ensure the smooth operation of projects for customers in the fields of rail transit, power industry, electric vehicles, motor drive inverters, and frequency converters.

Meanwhile, helping customers customize various thyristors and power assemblies according to their special parameter requirements is another important component Our contract manufacturing and one of our advantages.

Safe delivery

We cooperate with top international freight companies to ensure timely transportation.

At the same time, we carefully package every batch of goods delivered to our customers according to their requirements to ensure that our goods are delivered intact and undamaged.

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