4500V 2000A
Brief introduction:
Customized production by YT, StakPak Package ,IGBT Module with FWD.
Features
Applications
Maximum Rated Values
Parameter |
Symbol |
Conditions |
Value |
Unit |
Collector-Emitter Voltage |
VCES |
VGE=0V,Tvj=25°C |
4500 |
V |
DC Collector Current |
IC |
TC=100°C,Tvj=125°C |
2000 |
A |
Peak Collector Current |
ICM |
tp=1ms |
4000 |
A |
Gate-Emitter Voltage |
VGES |
|
±20 |
V |
Total Power Dissipation |
Ptot |
TC=25°C,Tvj=125°C |
20800 |
W |
DC Forward Current |
IF |
|
2000 |
A |
Peak Forward Current |
IFRM |
tp=1ms |
4000 |
A |
Surge Current |
IFSM |
VR=0V,Tvj=125°C, tp=10ms,half-sinewave |
14000 |
A |
IGBT Short Circuit SOA |
tpsc |
VCC=3400V,VCEM CHIP≤4500V VGE≤15V,Tvj≤125°C |
10 |
μs |
Maximum Junction Temperature |
Tvj(max) |
|
125 |
℃ |
Junction Operating Temperature |
Tvj(op) |
|
-40~125 |
℃ |
Case temperature |
TC |
|
-40~125 |
℃ |
Storage Temperature |
Tstg |
|
-40~70 |
℃ |
Mounting force |
FM |
|
60~75 |
kN |
IGBT Characteristic Values
Parameter |
Symbol |
Conditions |
Value |
Unit |
|||
Min. |
Typ. |
Max. |
|||||
Collector-Emitter Breakdown Voltage |
V(BR)CES |
VGE=0V, IC=10mA, Tvj=25℃ |
4500 |
|
|
V |
|
Collector-Emitter Saturation Voltage |
VCE(sat) |
IC=2000A, VGE=15V |
Tvj=25℃ |
|
2.70 |
3.05 |
V |
Tvj=125℃ |
|
3.35 |
3.85 |
V |
|||
Collector-Emitter Cut-off Current |
ICES |
VCE=4500V, VGE=0V |
Tvj=25℃ |
|
|
1 |
mA |
Tvj=125℃ |
|
15 |
100 |
mA |
|||
Gate-Emitter Leakage Current |
IGES |
VCE=0V, VGE=±20V, Tvj=125℃ |
-500 |
|
500 |
nA |
|
Gate-Emitter Threshold Voltage |
VGE(th) |
IC=320mA, VCE=VGE, Tvj=25℃ |
6.7 |
|
7.7 |
V |
|
Gate Charge |
QG |
IC=2000A, VCE=2800V, VGE=-15V~+15V |
|
10 |
|
μC |
|
Input Capacitance |
Cies |
VCE=25V, VGE=0V, f=500kHz, Tvj=25℃ |
|
213 |
|
nF |
|
Output Capacitance |
Coes |
|
15.3 |
|
nF |
||
Reverse Transfer Capacitance |
Cres |
|
4.7 |
|
nF |
||
Internal Gate Resistance |
RGint |
|
|
0 |
|
Ω |
|
Turn-on Delay Time |
td(on) |
IC=2000A, VCE=2800V, VGE=±15V, RGon=1.8Ω, RGoff=8.2Ω, Cge=330nF, LS=140nH, Inductive Load |
Tvj=25℃ |
|
1100 |
|
ns |
Tvj=125℃ |
|
900 |
|
ns |
|||
Rise Time |
tr |
Tvj=25℃ |
|
400 |
|
ns |
|
Tvj=125℃ |
|
450 |
|
ns |
|||
Turn-off Delay Time |
td(off) |
Tvj=25℃ |
|
3800 |
|
ns |
|
Tvj=125℃ |
|
4100 |
|
ns |
|||
Fall Time |
tf |
Tvj=25℃ |
|
1200 |
|
ns |
|
Tvj=125℃ |
|
1400 |
|
ns |
|||
Turn-on Switching Energy |
Eon |
Tvj=25℃ |
|
14240 |
|
mJ |
|
Tvj=125℃ |
|
15730 |
|
mJ |
|||
Turn-off Switching Energy |
Eoff |
Tvj=25℃ |
|
6960 |
|
mJ |
|
Tvj=125℃ |
|
8180 |
|
mJ |
|||
Short Circuit Current |
ISC |
VGE≤15V, tpsc≤10µs, VCC=3400V, Tvj=125℃ VCEM CHIP≤4500V |
|
8400 |
|
A |
Diode Characteristic Values
Parameter |
Symbol |
Conditions |
Value |
Unit |
|||
Min. |
Typ. |
Max. |
|||||
Forward Voltage |
VF |
IF=2000A |
Tvj=25℃ |
|
2.60 |
|
V |
Tvj=125℃ |
|
2.85 |
|
V |
|||
Reverse Recovery Current |
Irr |
IF=2000A, VR=2800V, VGE=15V, RGon=1.8Ω, LS=140nH, Inductive load |
Tvj=25℃ |
|
1620 |
|
A |
Tvj=125℃ |
|
1970 |
|
A |
|||
Reverse Recovery Charge |
Qrr |
Tvj=25℃ |
|
1750 |
|
uC |
|
Tvj=125℃ |
|
2700 |
|
uC |
|||
Reverse Recovery Time |
trr |
Tvj=25℃ |
|
4.0 |
|
us |
|
Tvj=125℃ |
|
5.1 |
|
us |
|||
Reverse Recovery Energy Loss |
Erec |
Tvj=25℃ |
|
2350 |
|
mJ |
|
Tvj=125℃ |
|
3860 |
|
mJ |
Circuit Configuration
Outline
Well-equipped laboratory
We have a well-equipped laboratory for testing and strictly control the quality of our products. This ensures that the qualification rate of the products we deliver to customers reaches 100%.
Automated modern factory
The modern automated factory ensures that all performance indicators of our products are highly consistent, minimizing the differences in each product's parameters as much as possible. This not only guarantees the reliability and consistency of our products but also serves as an important guarantee for the safe and reliable operation of our customers' equipment.
Adequate production capacity
The manufacturer's strong comprehensive strength and sufficient production capacity ensure timely delivery of every order.
Application Case:
Propulsion Drive Upgrade for Nuclear Icebreaker (60MW System) .
Customer Pain Points:
YT2000ASW45CZ's Naval-Grade Solutions
Pain Point | Technology Innovation | Certification Proof |
Cold-Induced Failure | Silver-sintered die attach (-55℃ operation) | Material: Eliminates organic adhesives |
Ice Impact Survival | Titanium-alloy Press-Pack + multi-stage dampers (15g vibration endurance) | Passed IEC 60068-3-8: 8g/80Hz |
Corrosion Resistance | Gold-plated terminals + hermetic sealing (IP6K9K) | MIL-STD-810H Salt Fog Test |
Space Optimization | Double-sided cooling → 40% smaller footprint vs. standard modules | Lloyd's Register Type Approval |
Operational Results :
Third-Party Verification
Why choose us?
Beijing World E To Technology Co., Ltd. is leading supplier of semiconductor products like IGBT moudel,IGBT discretes, IGBT Chips ,ADC/DAC ,Thyristor in China, mainly engaged in the official distribution of the brand of CRRC, Starpower, Techsem NARI.With import and export qualifications and 11 years experience in this industry, we export to Russia, UAE, and many other Europe area.
We have strict requirements for the selection of manufacturers, professional technical teams, and product quality control Ensure the smooth operation of projects for customers in the fields of rail transit, power industry, electric vehicles, motor drive inverters, and frequency converters.
Meanwhile, helping customers customize various thyristors and power assemblies according to their special parameter requirements is another important component Our contract manufacturing and one of our advantages.
Safe delivery
We cooperate with top international freight companies to ensure timely transportation.
At the same time, we carefully package every batch of goods delivered to our customers according to their requirements to ensure that our goods are delivered intact and undamaged.
Our professional sales team are waiting for your consultation.
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