YMIBH250-33,IGBT Module,Half Bridge IGBT,CRRC

Symbol

Parameter

Test Conditions

Value

Unit

VCES

Collector-emitter voltage

VGE = 0V, TC= 25 °C

3300

V

VGES

Gate-emitter voltage

TC= 25 °C

± 20

V

IC

Collector-emitter current

TC = 100 °C

250

A

IC(PK)

Peak collector current

tP=1ms

500

A

Pmax

Max. transistor power dissipation

Tvj = 150°C, TC = 25 °C

2.6

kW

I2t

Diode I2t

VR =0V, tP = 10ms, Tvj = 150 °C

20

kA2s

Visol

Isolation voltage - per module

( Commoned terminals to baseplate), AC RMS,1 min, 50Hz, TC= 25 °C

6

kV

QPD

Partial discharge - per module

IEC1287. V1=6900V,V2=5100V,50Hz RMS

10

pC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector cut-off current

VGE = 0V,VCE = VCES

1

mA

VGE = 0V, VCE = VCES, TC=125 °C

15

mA

VGE = 0V, VCE = VCES, TC=150 °C

25

mA

IGES

Gate leakage current

VGE = ±20V, VCE = 0V

1

μA

VGE (TH)

Gate threshold voltage

IC = 20mA, VGE = VCE

5.5

6.1

7.0

V

VCE (sat)(*1)

Collector-emitter saturation voltage

VGE =15V, IC = 250A

2.50

2.80

V

VGE =15V, IC = 250A, Tvj = 125 °C

3.15

3.45

V

VGE =15V, IC = 250A, Tvj = 125 °C

3.30

3.60

V

IF

Diode forward current

DC

250

A

IFRM

Diode peak forward current

tP = 1ms

500

A

VF(*1)

Diode forward voltage

IF = 250A, VGE = 0

2.10

2.40

V

IF = 250A, VGE = 0, Tvj = 125 °C

2.25

2.55

V

IF = 250A, VGE = 0, Tvj = 150 °C

2.25

2.55

V

ISC

Short circuit current

Tvj = 150°C, VCC = 2500V, VGE ≤15V, tp ≤10μs,

VCE(max) = VCES – L(*2) ×di/dt, IEC 6074-9

900

A

ICES

Collector cut-off current

VGE = 0V,VCE = VCES

1

mA

VGE = 0V, VCE = VCES, TC=125 °C

15

mA

VGE = 0V, VCE = VCES, TC=150 °C

25

mA

IGES

Gate leakage current

VGE = ±20V, VCE = 0V

1

μA

VGE (TH)

Gate threshold voltage

IC = 20mA, VGE = VCE

5.5

6.1

7.0

V

VCE (sat)(*1)

Collector-emitter saturation

voltage

VGE =15V, IC = 250A

2.50

2.80

V

VGE =15V, IC = 250A, Tvj = 125 °C

3.15

3.45

V

VGE =15V, IC = 250A, Tvj = 125 °C

3.30

3.60

V

IF

Diode forward current

DC

250

A

IFRM

Diode peak forward current

tP = 1ms

500

A

VF(*1)

Diode forward voltage

IF = 250A, VGE = 0

2.10

2.40

V

IF = 250A, VGE = 0, Tvj = 125 °C

2.25

2.55

V

IF = 250A, VGE = 0, Tvj = 150 °C

2.25

2.55

V

ISC

Short circuit current

Tvj = 150°C, VCC = 2500V, VGE ≤15V, tp ≤10μs,

VCE(max) = VCES – L(*2) ×di/dt, IEC 6074-9

900

A

td(off)

Turn-off delay time

IC =250A,

VCE = 1800V, VGE = ±15V, RG(OFF) = 9.0Ω , CGE = 56nF,

LS = 150nH,

Tvj= 25 °C

1480

ns

Tvj= 125 °C

1550

Tvj= 150 °C

1570

tf

Fall time

Tvj= 25 °C

1280

ns

Tvj= 125 °C

1920

Tvj= 150 °C

2120

EOFF

Turn-off energy loss

Tvj= 25 °C

300

mJ

Tvj= 125 °C

380

Tvj= 150 °C

400

td(on)

Turn-on delay time

IC =250A,

VCE = 1800V, VGE = ±15V, RG(ON) = 6.0Ω , CGE = 56nF,

LS = 150nH,

Tvj= 25 °C

640

ns

Tvj= 125 °C

650

Tvj= 150 °C

650

tr

Rise time

Tvj= 25 °C

220

ns

Tvj= 125 °C

235

Tvj= 150 °C

238

EON

Turn-on energy loss

Tvj= 25 °C

395

mJ

Tvj= 125 °C

510

Tvj= 150 °C

565

Qrr

Diode reverse

recovery charge

IF =250A,

VCE = 1800V,

- diF/dt = 1200A/us, (Tvj= 125 °C).

Tvj= 25 °C

190

μC

Tvj= 125 °C

295

Tvj= 150 °C

335

Irr

Diode reverse

recovery current

Tvj= 25 °C

185

A

Tvj= 125 °C

210

Tvj= 150 °C

216

Erec

Diode reverse

recovery energy

Tvj= 25 °C

223

mJ

Tvj= 125 °C

360

Tvj= 150 °C

410