With the rapid development of electric vehicles, renewable energy, industrial automation, and advanced power electronics, Silicon Carbide (SiC) power semiconductors are becoming an important technology for next-generation high-efficiency power systems.
Compared with conventional silicon-based devices, SiC devices offer several technical advantages, including higher switching frequency, lower switching losses, higher temperature capability, and improved power density. These characteristics help improve system efficiency, reduce energy consumption, and support more compact and lightweight system designs.
To meet the growing market demand for high-performance power semiconductors, we are expanding our product portfolio to include a complete range of SiC products and solutions. Our SiC product line includes:
Our products can be applied in a wide range of industries and applications, including:
Electric Vehicles (EV)
Energy Storage Systems (ESS)
Solar Inverters
Industrial Inverters and Motor Drives
EV Charging Systems
Power Supply Equipment
Industrial Automation Systems
Railway and High-Power Industrial Applications
We understand that customers may have different requirements regarding performance, package types, cost optimization, and application environments. Therefore, in addition to standard products, we also aim to support customers with product selection and application matching according to their project requirements.
As SiC technology continues to develop and gain wider adoption in the global market, we look forward to working with customers and partners worldwide to provide reliable and efficient SiC power semiconductor solutions for future energy and industrial applications.

SCE900N1200ED
SiC Module
Features
- High Temperature,Humidity,and BiasOperation
- Ultra Low Loss
- High-frequency Operation
- Zero Turn-offTail Currentfrom MOSFET
- Normally-off, Fail-safe Device Operation
- CopperBaseplate andAluminumNitride Insulato
Applications
- HighPower Converters
- MotorDrives
- Servo Drives
- UPS Systems
- WindTurbines
Symbol |
Parameter |
Values |
Unit |
Test Conditions |
Absolute maximum rating |
VDS |
Drain-source Voltage |
1200 |
V |
TC=25°C |
ID |
Drain Current (continuous) |
900 |
A |
TC=25°C |
TJ |
Junction Temperature |
175 |
。C |
|
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
Test Conditions |
Static characteristics |
RDS(on) |
Static Drain-source on Resistance |
- |
1.8 |
2.5 |
mΩ |
VGS=18V; ID=450A; TC=25°C |
Dynamic characteristics |
QG |
Total Gate Charge |
- |
2142 |
- |
nC |
VDD=800V; VGS=-5/+18V; ID=450A; TC=25°C |
QGD |
Gate-drain Charge |
- |
705 |
- |
Source-drain diode |
QRR |
Reverse Recovery Charge |
- |
5517 |
- |
nC |
VGS=-5/+18V; IF=500A; VR=900V; Load=100µH; TJ=25°C |
Absolute Maximum Ratings (at TC=25°C unless otherwise specified)