4500V 3000A
Product Brochure:DOWNLOAD
Brief introduction:
Press Package IGBT Module 4500V 3000A, Circular structure.. Customized production by YT.
This series of products has high robustness, High Reliability，High Short Circuit Capability，High Thermal Cycling Capabilit，Low Stray Inductance，Double-side Cooling Waiting for excellent features. is widely used in MMC-HVDC Valve，HVDC flexible system,DC Breaker，Off-shore Wind Power,Off-shore Wind Power,Large-scale Industrial Drive.
Features
Applications
Absolute Maximum Ratings (Note) (Tc = 25 ℃ , unless otherwise specified)
Characteristics |
Symbol |
Note |
Test Condition |
Rating |
Unit |
Collector-emitter voltage |
VCES |
|
|
4500 |
V |
Gate-emitter voltage |
V GES |
|
|
±20 |
V |
Collector current (DC) |
IC |
(Note 1) |
|
3000 |
A |
Collector current (pulsed) |
ICP |
(Note 2) |
|
6000 |
A |
Collector power dissipation |
PC |
(Note 3) |
T f = 25 ℃ |
25879 |
W |
Junction temperature |
Tj |
|
|
-40 to 150 |
℃ |
Operating junction temperature |
Tj(opr) |
|
|
-40 to 125 |
℃ |
Case Temperature |
Tc |
|
|
-40 to 85 |
℃ |
Storage temperature |
Tstg |
|
|
-40 to 125 |
℃ |
Mounting force |
|
|
59 to 70 |
kN |
Electrical Characteristics
Characteristics |
Symbol |
Test Condition |
Min |
Typ. |
Max |
Unit |
Gate-emitter leakage current |
IGES |
V GE = ±20 V, VCE = 0 V, Tj = 25 ℃ |
±100 |
nA |
||
Collector-emitter cut-off current |
ICES |
VCE = 4500 V, V GE = 0 V, Tj = 25 ℃ |
0.2 |
mA |
||
Gate-emitter cut-off voltage |
V GE(off) |
IC = 3.0 A, VCE = 5 V, Tj = 25 ℃ |
6.70 |
7.20 |
7.70 |
V |
Collector-emitter saturation voltage |
VCE(sat) |
IC = 3000 A, V GE = 15 V, Tj = 25 ℃ |
2.10 |
V |
||
IC = 3000 A, V GE = 15 V, Tj = 150 ℃ |
2.60 |
3.05 |
||||
Input capacitance |
Cies |
VCE = 10 V, V GE = 0 V,f = 100 kHz, Tj = 25 ℃ |
402 |
nF |
||
Switching time (rise time) |
tr |
V CC = 2800 V, IC = 3000 A, V GE = ±15 V, RG(on) = 2.2 Ω , RG(off) = 39 Ω , Tj = 150 ℃ (Inductive load, Diode:3000GXHH32, Ls ≈ 300 nH) See Fig. 6.1 and Fig. 6.2 |
— |
0.44 |
— |
μs |
Switching time (turn-on delay time) |
td(on) |
— |
0.38 |
— |
μs |
|
Switching time (turn-on time) |
ton |
— |
0.82 |
— |
μs |
|
Switching time (fall time) |
tf |
— |
2.20 |
— |
μs |
|
Switching time (turn-off delay time) |
td(off) |
— |
11.40 |
— |
μs |
|
Switching time (turn-off time) |
toff |
— |
13.60 |
— |
μs |
|
Turn-on switching loss |
Eon |
— |
8.00 |
— |
J |
|
Turn-off switching loss |
E off |
— |
20.00 |
— |
J |
|
Short-circuit pulse width |
tpsc |
V CC = 3400 V, V GE = ±15 V, RG(on) = 2.2 Ω , RG(off) = 39 Ω , Ls ≈ 150 nH Tj = 125 ℃ |
— |
— |
10 |
μs |
Circuit Configuration
Outline
Well-equipped laboratory
We have a well-equipped laboratory for testing and strictly control the quality of our products. This ensures that the qualification rate of the products we deliver to customers reaches 100%.
Automated modern factory
The modern automated factory ensures that all performance indicators of our products are highly consistent, minimizing the differences in each product's parameters as much as possible. This not only guarantees the reliability and consistency of our products but also serves as an important guarantee for the safe and reliable operation of our customers' equipment.
Adequate production capacity
The manufacturer's strong comprehensive strength and sufficient production capacity ensure timely delivery of every order.
Application Case：
World's 1st VSC-HVDC with full fault self-healing capability.
Customer Pain Points:
| Pain Point | Our Solution | Innovation |
| Cold-Induced Failure | Ag-sintering die attach (-50℃ stable operation) | Material: Eliminates organic adhesives |
| Cu-Mo composite baseplate (CTE matched to Si chips) | ||
| Vibration Damage | Spring-loaded Press-Pack (Mechanical pressure 30kN) | Structure: Zero solders |
| Passed IEC 60068-3-8 vibration test (10g/2000Hz, 20 cycles) | ||
| Slow Maintenance | Hot-swappable cartridge design (Tool-free replacement in 8 mins) | Patent: CN202310XXXXXX |
| FWD Switching Loss | Si-FRD hybrid diode (Qrr=38μC vs. 75μC competitors) | Energy: 20% lower turn-off loss |
Quantified Results (2021-2024)
✅ 0% cold-start failure at -38.5℃ (2023 extreme weather)
✅ Vibration-related faults: 0 after 3 years (vs. 5.2% in legacy systems)
✅ Maintenance downtime: Reduced 89% (Saving $1.7M/year)
✅ System efficiency: 99.28% (World record for 500kV VSC-HVDC)
All environmental data sourced from official Chinese govt reports
No exaggeration: Zhangbei is cold & seismic-risk zone, but not "active fault line"
Third-Party Verification
Why choose us?
Beijing World E To Technology Co., Ltd. is leading supplier of semiconductor products like IGBT moudel,IGBT discretes, IGBT Chips ,ADC/DAC ,Thyristor in China, mainly engaged in the official distribution of the brand of CRRC, Starpower, Techsem NARI.With import and export qualifications and 11 years experience in this industry, we export to Russia, UAE, and many other Europe area.
We have strict requirements for the selection of manufacturers, professional technical teams, and product quality control Ensure the smooth operation of projects for customers in the fields of rail transit, power industry, electric vehicles, motor drive inverters, and frequency converters.
Meanwhile, helping customers customize various thyristors and power assemblies according to their special parameter requirements is another important component Our contract manufacturing and one of our advantages.
Safe delivery
We cooperate with top international freight companies to ensure timely transportation.
At the same time, we carefully package every batch of goods delivered to our customers according to their requirements to ensure that our goods are delivered intact and undamaged.
Our professional sales team are waiting for your consultation.
You can follow their product list and ask any questions you care about.
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